Inventor · disambiguated record
Gary W. Ray
Also filed as: RAY GARY · RAY GARY W · RAY GARY WILLIAM
19 granted patents·1 pending application·823 citations·filing 1991–2009
96Inventor score
Files withAGILENT TECHNOLOGIES INC7HEWLETT PACKARD CO5NOVELLUS SYSTEMS INC3INTEL CORP2DRAEGER NERISSA S1
Top patents by PatentIndex Score
20 records- 0197US7166531B1VLSI fabrication processes for introducing pores into dielectric materialsNOVELLUS SYSTEMS INC·Filed 2005·Granted Jan 23, 2007·160 cites·36 claims
- 0290US5886410AInterconnect structure with hard mask and low dielectric constant materialsINTEL CORP·Filed 1996·Granted Mar 23, 1999·110 cites·14 claims
- 0389US8062983B1Creation of porosity in low-k films by photo-disassociation of imbedded nanoparticlesDRAEGER NERISSA S·Filed 2009·Granted Nov 22, 2011·17 cites·17 claims
- 0487US6018187AElevated pin diode active pixel sensor including a unique interconnection structureHEWLETT PACKARD CMPANY·Filed 1998·Granted Jan 25, 2000·94 cites·15 claims
- 0586US6281535B1Three-dimensional ferroelectric capacitor structure for nonvolatile random access memory cellAGILENT TECHNOLOGIES INC·Filed 1999·Granted Aug 28, 2001·88 cites·18 claims
- 0685US7629224B1VLSI fabrication processes for introducing pores into dielectric materialsNOVELLUS SYSTEMS INC·Filed 2006·Granted Dec 8, 2009·19 cites·13 claims
- 0781US6027995AMethod for fabricating an interconnect structure with hard mask and low dielectric constant materialsINTEL CORP·Filed 1998·Granted Feb 22, 2000·59 cites·8 claims
- 0879US6396118B1Conductive mesh bias connection for an array of elevated active pixel sensorsAGILENT TECHNOLOGIES INC·Filed 2000·Granted May 28, 2002·25 cites·16 claims
- 0978US6215164B1Elevated image sensor array which includes isolation between uniquely shaped image sensorsAGILENT TECHNOLOGIES INC·Filed 1999·Granted Apr 10, 2001·53 cites·16 claims
- 1071US6387736B1Method and structure for bonding layers in a semiconductor deviceAGILENT TECHNOLOGIES INC·Filed 1999·Granted May 14, 2002·34 cites·16 claims
- 1169US7972976B1VLSI fabrication processes for introducing pores into dielectric materialsNOVELLUS SYSTEMS INC·Filed 2009·Granted Jul 5, 2011·7 cites·15 claims
- 1267US6114739AElevated pin diode active pixel sensor which includes a patterned doped semiconductor electrodeAGILENT TECHNOLOGIES INC·Filed 1998·Granted Sep 5, 2000·33 cites·11 claims
- 1365US6051867AInterlayer dielectric for passivation of an elevated integrated circuit sensor structureHEWLETT PACKARD CO·Filed 1999·Granted Apr 18, 2000·29 cites·9 claims
- 1459US6016011AMethod and apparatus for a dual-inlaid damascene contact to sensorHEWLETT PACKARD CO·Filed 1999·Granted Jan 18, 2000·24 cites·12 claims
- 1557US6759724B2Isolation of alpha silicon diode sensors through ion implantationAGILENT TECHNOLOGIES INC·Filed 2003·Granted Jul 6, 2004·5 cites·32 claims
- 1657US5342808AAperture size control for etched vias and metal contactsHEWLETT PACKARD CO·Filed 1993·Granted Aug 30, 1994·32 cites·7 claims
- 1750US5200360AMethod for reducing selectivity loss in selective tungsten depositionHEWLETT PACKARD CO·Filed 1991·Granted Apr 6, 1993·19 cites·4 claims
- 1844US6586812B1Isolation of alpha silicon diode sensors through ion implantationAGILENT TECHNOLOGIES INC·Filed 1999·Granted Jul 1, 2003·9 cites·2 claims
- 1940US2001006846A1Method and structure for bonding layers in a semiconductor deviceFiled 2001·Application pending·0 cites
- 2034US6083572AOrganic low-dielectric constant films deposited by plasma enhanced chemical vapor depositionHEWLETT PACKARD CO·Filed 1998·Granted Jul 4, 2000·6 cites·26 claims
Join the waitlist — get patent alerts
Get an alert when Gary W. Ray files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →