Method and structure for bonding layers in a semiconductor device

Abstract

A structure and a method for providing structural stability at an interface between two poorly adhering layers in a semiconductor device involve providing anchoring channels in one of the poorly adhering layers through which the other poorly adhering layer can be anchored to a third layer. Specifically, the structure and method are applicable to a three-layer stack having a top layer of amorphous silicon, a middle layer of titanium nitride, and a bottom layer of oxide. In order to reduce susceptibility to delamination between the amorphous silicon layer and the titanium nitride layer, the anchoring channels are created in the titanium nitride layer to allow the amorphous silicon to attach to the oxide layer. Because the amorphous silicon layer and the oxide layer exhibit good adhesion between each other, delamination between the amorphous silicon layer and the titanium nitride layer is minimized.

What is claimed is:  
     
         1 . A semiconductor device fabrication method for bonding second and third layers formed of materials having weak adhesion characteristics with respect to each other, said method comprising the steps of: 
 providing a first layer, said first layer being electrically non-conductive, said first layer having properties which provide relatively strong adhesion when in contact with either said second layer or said third layer;    forming said second layer on said first layer, said second layer having a first surface in contact with said first layer and having a second surface opposite said first surface, said second layer being formed to include anchoring channels that pass from said first surface of said second layer to said first layer, said second layer being electrically conductive; and    depositing said third layer on said second surface of said second layer and into said anchoring channels within said second layer such that said third layer bonds to said first layer, thereby providing structural stability in joining said first, second and third layers.    
     
     
         2 . The method of    claim 1    wherein said step of depositing includes a step of creating an electrically non-conductive bond between said first layer and said third layer.  
     
     
         3 . The method of    claim 2    wherein: 
 said step of providing said first layer includes a step of depositing an oxide layer;  
 said step of forming said second layer includes a step of depositing a titanium nitride layer; and  
 said step of depositing said third layer includes a step of depositing an amorphous silicon layer.  
 
     
     
         4 . The method of    claim 2    wherein said step of forming anchoring channels within said second layer includes a step of etching anchoring channels into said second layer, said anchoring channels being completely surrounded by a continuous portion of said second layer.  
     
     
         5 . The method of    claim 4    wherein no point on said second layer is greater than 250 μm from at least one of said anchoring channels.  
     
     
         6 . The method of    claim 5    wherein: 
 said step of providing said first layer includes a step of depositing an oxide layer;  
 said step of forming said second layer includes a step of depositing a titanium nitride layer; and  
 said step of depositing said third layer includes a step of depositing an amorphous silicon layer.  
 
     
     
         7 . The method of    claim 2    wherein said step of forming anchoring channels within said second layer includes a step of etching continuous areas within said second layer to create a plurality of spaced apart second layer islands.  
     
     
         8 . The method of    claim 7    wherein no point on said second layer islands is greater than 250 μm from at least one of said anchoring channels.  
     
     
         9 . The method of    claim 8    wherein: 
 said step of providing said first layer includes a step of depositing an oxide layer;  
 said step of forming said second layer includes a step of depositing a titanium nitride layer; and  
 said step of depositing said third layer includes a step of depositing an amorphous silicon layer.  
 
     
     
         10 . A semiconductor device structure for retarding delamination between layers in a three-layer stack comprising: 
 a first layer having first and second opposing surfaces;    a second layer patterned to reside on a first portion of said first surface of said first layer, such that said second layer is not in contact with a second portion of said first surface of said first layer, said second portion defining anchoring channels; and    a third layer on a surface of said second layer that is opposite to said first layer, said third layer residing within said anchoring channels such that an electrically non-conducting bond is formed between said third layer and said first layer, thereby tying said third layer down to said second layer and reducing susceptibility to delamination between said second layer and said third layer.    
     
     
         11 . The semiconductor device structure of    claim 10    wherein said first layer is an oxide layer, said second layer is a titanium nitride layer, and said third layer is an amorphous silicon layer.  
     
     
         12 . The semiconductor device structure of    claim 10    wherein said second layer exists on said first surface of said first layer in a repeating pattern.  
     
     
         13 . The semiconductor device structure of    claim 12    wherein said second layer exists as a continuous layer having a plurality of said anchoring channels through said continuous layer.  
     
     
         14 . The semiconductor device structure of    claim 13    wherein no point on said second layer is more than 250 μm from at least one of said anchoring channels.  
     
     
         15 . The semiconductor device structure of    claim 10    wherein said second layer exists as a plurality of non-continuous islands on said first surface of said first layer.  
     
     
         16 . The semiconductor device structure of    claim 15    wherein no point on said non-continuous islands is more than 250 μm from at least one of said anchoring channels.  
     
     
         17 . A semiconductor device fabrication method for bonding an amorphous silicon layer to a titanium nitride layer, said amorphous silicon layer and said titanium nitride layer having relatively weak bonding characteristics with respect to each other, said method comprising the steps of: 
 providing an oxide layer which has relatively strong bonding characteristics with respect to amorphous silicon and titanium nitride, said oxide layer being electrically non-conductive;    forming said titanium nitride layer onto said oxide layer, including forming anchoring channels within said titanium nitride layer, said anchoring channels exposing portions of said oxide layer for bonding with said amorphous silicon layer; and    depositing said amorphous silicon layer onto said titanium nitride layer and into said anchoring channels in order to provide structural stability at the interface of said titanium nitride layer and said amorphous silicon layer, said amorphous silicon layer forming relatively strong bonds with said exposed portions of said oxide layer, said relatively strong bonds between sand amorphous silicon layer and said oxide layer being electrically non-conductive.    
     
     
         18 . The method of    claim 17    wherein said step of forming said titanium nitride layer includes a step of limiting the distance between said anchoring channels to 200 μm or less in at least one linear direction.  
     
     
         19 . The method of    claim 17    wherein said step of forming anchoring channels within said titanium nitride layer includes a step of etching continuous areas within said titanium nitride layer to create a plurality of titanium nitride layer islands.  
     
     
         20 . The method of    claim 19    wherein each one of said titanium nitride islands is no more than 200 μm in at least one linear direction.