Inventor · disambiguated record

Masaaki Yuri

Also filed as: YURI MASAAKI

57 granted patents·11 pending applications·1,752 citations·filing 1996–2014

99Inventor score

Technology areasH10P H01S H10H H10W B82Y

Files withMATSUSHITA ELECTRIC INDUSTRIAL CO LTD40 PANASONIC CORP14 MATSUSHITA ELECTRONICS CORP12 KAWAGUCHI MASAO1

Top patents by PatentIndex Score

68 records

0197US6069394ASemiconductor substrate, semiconductor device and method of manufacturing the sameMATSUSHITA ELECTRONICS CORP·Filed 1998·Granted May 30, 2000·301 cites·9 claims
0295US6420197B1Semiconductor device and method of fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2000·Granted Jul 16, 2002·90 cites·13 claims
0395US6139628AMethod of forming gallium nitride crystalMATSUSHITA ELECTRONICS CORP·Filed 1998·Granted Oct 31, 2000·123 cites·13 claims
0494US6274518B1Method for producing a group III nitride compound semiconductor substrateMATSUSHITA ELECTRONICS CORP·Filed 2000·Granted Aug 14, 2001·86 cites·12 claims
0594US6249534B1Nitride semiconductor laser deviceMATSUSHITA ELECTRONICS CORP·Filed 1999·Granted Jun 19, 2001·109 cites·13 claims
0693US6562701B2Method of manufacturing nitride semiconductor substrateMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2002·Granted May 13, 2003·66 cites·17 claims
0791US7279751B2Semiconductor laser device and manufacturing method thereofMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2005·Granted Oct 9, 2007·13 cites·2 claims
0891US6815726B2Semiconductor device and semiconductor substrate, and method of fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Nov 9, 2004·44 cites·22 claims
0991US6566231B2Method of manufacturing high performance semiconductor device with reduced lattice defects in the active regionMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2001·Granted May 20, 2003·59 cites·19 claims
1090US7956368B2Semiconductor light emitting device, lighting module, lighting apparatus, and manufacturing method of semiconductor light emitting devicePANASONIC CORP·Filed 2009·Granted Jun 7, 2011·13 cites·9 claims
1190US6617182B2Semiconductor device and semiconductor substrate, and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1999·Granted Sep 9, 2003·85 cites·16 claims
1290US6546035B2Semiconductor laser diode array and method of fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2001·Granted Apr 8, 2003·35 cites·19 claims
1389US7508001B2Semiconductor laser device and manufacturing method thereofPANASONIC CORP·Filed 2005·Granted Mar 24, 2009·11 cites·21 claims
1489US7101061B2Light emission apparatusMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Sep 5, 2006·54 cites·15 claims
1589US5928421AMethod of forming gallium nitride crystalMATSUSHITA ELECTRONICS CORP·Filed 1997·Granted Jul 27, 1999·98 cites·28 claims
1687US7078737B2Light-emitting deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Jul 18, 2006·46 cites·18 claims
1787US6821805B1Semiconductor device, semiconductor substrate, and manufacture methodMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2000·Granted Nov 23, 2004·40 cites·29 claims
1886US7826512B2Semiconductor laser device including transparent electrodePANASONIC CORP·Filed 2007·Granted Nov 2, 2010·10 cites·10 claims
1986US6887770B2Method for fabricating semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted May 3, 2005·42 cites·46 claims
2082US6750158B2Method for producing a semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2002·Granted Jun 15, 2004·26 cites·12 claims
2181US6562644B2Semiconductor substrate, method of manufacturing the semiconductor substrate, semiconductor device and pattern forming methodMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2001·Granted May 13, 2003·18 cites·4 claims
2281US6117700AMethod for fabricating semiconductor device having group III nitrideMATSUSHITA ELECTRONICS CORP·Filed 1999·Granted Sep 12, 2000·57 cites·15 claims
2378US6593159B1Semiconductor substrate, semiconductor device and method of manufacturing the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2000·Granted Jul 15, 2003·26 cites·11 claims
2477US7456034B2Nitride semiconductor device and method for fabricating the samePANASONIC CORP·Filed 2006·Granted Nov 25, 2008·6 cites·8 claims
2577US6649494B2Manufacturing method of compound semiconductor waferMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2002·Granted Nov 18, 2003·19 cites·21 claims
2676US6810057B1Semiconductor device and optical pickup deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2000·Granted Oct 26, 2004·13 cites·20 claims
2775US6292500B1Semiconductor laser deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1999·Granted Sep 18, 2001·53 cites·10 claims
2874US9209361B2Nitride semiconductor light-emitting elementPANASONIC CORP·Filed 2014·Granted Dec 8, 2015·2 cites·8 claims
2971US7345311B2Semiconductor substrate, method of manufacturing the semiconductor substrate, semiconductor device and pattern forming methodMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2005·Granted Mar 18, 2008·2 cites·5 claims
3071US6344375B1Substrate containing compound semiconductor, method for manufacturing the same and semiconductor device using the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1999·Granted Feb 5, 2002·42 cites·17 claims
3167US7834366B2Semiconductor device having a group III nitride semiconductor layerPANASONIC CORP·Filed 2006·Granted Nov 16, 2010·2 cites·3 claims
3265US7773646B2Semiconductor light source and light-emitting device drive circuitPANASONIC CORP·Filed 2007·Granted Aug 10, 2010·2 cites·13 claims
3363US7091524B2Semiconductor device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted Aug 15, 2006·7 cites·8 claims
3463US6168659B1Method of forming gallium nitride crystalMATSUSHITA ELECTRONICS CORP·Filed 1998·Granted Jan 2, 2001·26 cites·29 claims
3562US7713812B2Method for manufacturing semiconductor thin filmPANASONIC CORP·Filed 2006·Granted May 11, 2010·2 cites·13 claims
3660US6150674ASemiconductor device having Alx Ga1-x N (0<x<1) substrateMATSUSHITA ELECTRONICS CORP·Filed 1999·Granted Nov 21, 2000·24 cites·4 claims
3758US8026530B2Semiconductor light-emitting device, lighting module and lighting apparatusPANASONIC CORP·Filed 2005·Granted Sep 27, 2011·1 cites·22 claims
3858US6673702B2Method for producing a semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2000·Granted Jan 6, 2004·8 cites·4 claims
3958US6556606B2High-powered semiconductor laser array apparatus in which the wavelength and phase of laser beams from semiconductor laser units above can be matched those of laser beams from semiconductor laser units below, manufacturing method of the semiconductor laser array apparatus and multi-wavelength laser emitting apparatus using the semiconductor laser array apparatusesMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2001·Granted Apr 29, 2003·5 cites·74 claims
4057US7008839B2Method for manufacturing semiconductor thin filmMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Mar 7, 2006·7 cites·17 claims
4157US2008105950A1Semiconductor substrate, method of manufacturing the semiconductor substrate, semiconductor device and pattern forming methodMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2008·Application pending·0 cites
4256US7622743B2Semiconductor light emitting device, lighting module, lighting apparatus, and manufacturing method of semiconductor light emitting devicePANASONIC CORP·Filed 2004·Granted Nov 24, 2009·4 cites·20 claims
4355US6826224B2High-power semiconductor laser array apparatus that outputs laser lights matched in wavelength and phase, manufacturing method therefor, and multi-wavelength laser emitting apparatus using such high-power semiconductor laser array apparatusMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2001·Granted Nov 30, 2004·8 cites·6 claims
4454US6030886AGrowth of GaN on a substrate using a ZnO buffer layerMATSUSHITA ELECTRONICS CORP·Filed 1997·Granted Feb 29, 2000·18 cites·5 claims
4553US2009072221A1Nitride semiconductor device and method for fabricating the samePANASONIC CORP·Filed 2008·Application pending·0 cites
4653US2009045431A1Semiconductor light-emitting device having a current-blocking layer formed between a semiconductor multilayer film and a metal film and located at the periphery. , method for fabricating the same and method for bonding the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2008·Application pending·0 cites
4752US6904068B2Semiconductor laser device and multiple wavelength laser light emitting apparatus employing the semiconductor laser deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2001·Granted Jun 7, 2005·3 cites·12 claims
4852US6773948B2Semiconductor light emitting device and method for producing the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Aug 10, 2004·2 cites·6 claims
4952US5751756ASemiconductor laser device for use as a light source of an optical disk or the likeMATSUSHITA ELECTRONICS CORP·Filed 1996·Granted May 12, 1998·17 cites·28 claims
5051US8000365B2Semiconductor laser devicePANASONIC CORP·Filed 2009·Granted Aug 16, 2011·0 cites·6 claims

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →