Semiconductor substrate, method of manufacturing the semiconductor substrate, semiconductor device and pattern forming method

Abstract

A semiconductor substrate comprises a semiconductor layer comprising a group III nitride as a main component. A scattering portion for scattering an incident beam of light incident on one plane of the semiconductor layer is provided on another plane or inside of the semiconductor layer.

1 . A semiconductor device comprising; 
 a semiconductor substrate comprising a group XII nitride as a main components,    a n-type clad layer formed on said semiconductor substrate, wherein said semiconductor substrate has a light absorbing portion for absorbing a beam of light incident on one planer; and    a structure formed on said one plane of said semiconductor substrate by photolithography and etching of a semiconductor layer made of said group III nitride.    
   
   
       2 . The semiconductor device according to  claim 1 , wherein said structure has a ridge structure or a trench structure.  
   
   
       3 . The semiconductor device according to  claim 1 , wherein the beam of light is g-line or i-line of a mercury lamp.  
   
   
       4 . A semiconductor device comprising: 
 a semiconductor substrate comprising a group III nitride as a main component,    a n-type clad layer formed on said semiconductor substrate,    wherein said n-type clad layer has a light absorbing portion for absorbing a beam of light incident on one plane; and    a structure formed on said one plane of said semiconductor substrate by photolithography and etching of a semiconductor layer made of said group III nitride.    
   
   
       5 . The semiconductor device according to  claim 4 , wherein said structure has a ridge structure or a trench structure.  
   
   
       6 . The semiconductor device according to  claim 4 , wherein the beam of light is g-line or i-line of a mercury lamp.