Inventor · disambiguated record
Keith Kwong Hon Wong
Also filed as: WONG KEITH · WONG KEITH K · WONG KEITH K H · WONG KEITH KWONG HON
220 granted patents·37 pending applications·1,612 citations·filing 1989–2019
99Inventor score
Top patents by PatentIndex Score
257 records- 0198US8546209B1Replacement metal gate processing with reduced interlevel dielectric layer etch rateCHENG KANGGUO·Filed 2012·Granted Oct 1, 2013·35 cites·20 claims
- 0298US7557424B2Reversible electric fuse and antifuse structures for semiconductor devicesIBM·Filed 2007·Granted Jul 7, 2009·75 cites·16 claims
- 0397US9505611B1Integration of electromechanical and CMOS devices in front-end-of-line using replacement metal gate process flowGLOBALFOUNDRIES INC·Filed 2015·Granted Nov 29, 2016·18 cites·14 claims
- 0497US7531407B2Semiconductor integrated circuit devices having high-Q wafer backside inductors and methods of fabricating sameIBM·Filed 2006·Granted May 12, 2009·61 cites·11 claims
- 0596US9553092B2Alternative threshold voltage scheme via direct metal gate patterning for high performance CMOS FinFETsGLOBALFOUNDRIES INC·Filed 2015·Granted Jan 24, 2017·15 cites·11 claims
- 0696US8084346B1Replacement metal gate methodGUO DECHAO·Filed 2010·Granted Dec 27, 2011·26 cites·20 claims
- 0796US7514271B2Method of forming high density planar magnetic domain wall memoryIBM·Filed 2007·Granted Apr 7, 2009·36 cites·10 claims
- 0895US9343372B1Metal stack for reduced gate resistanceGLOBALFOUNDRIES INC·Filed 2014·Granted May 17, 2016·23 cites·20 claims
- 0995US8735947B1Non-volatile graphene nanomechanical switchIBM·Filed 2012·Granted May 27, 2014·12 cites·15 claims
- 1095US7973409B2Hybrid interconnect structure for performance improvement and reliability enhancementIBM·Filed 2007·Granted Jul 5, 2011·24 cites·9 claims
- 1195US7394332B2Micro-cavity MEMS device and method of fabricating sameIBM·Filed 2005·Granted Jul 1, 2008·45 cites·18 claims
- 1294US9905476B2Alternative threshold voltage scheme via direct metal gate patterning for high performance CMOS FinFETsGLOBALFOUNDRIES INC·Filed 2017·Granted Feb 27, 2018·9 cites·20 claims
- 1394US9142660B2Method to fabricate a vertical transistor having an asymmetric gate with two conductive layers having different work functionsGUO DECHAO·Filed 2012·Granted Sep 22, 2015·17 cites·19 claims
- 1494US9099493B2Semiconductor device with raised source/drain and replacement metal gateIBM·Filed 2015·Granted Aug 4, 2015·9 cites·14 claims
- 1594US8232148B2Structure and method to make replacement metal gate and contact metalLI ZHENGWEN·Filed 2010·Granted Jul 31, 2012·19 cites·12 claims
- 1694US7838908B2Semiconductor device having dual metal gates and method of manufactureIBM·Filed 2009·Granted Nov 23, 2010·28 cites·14 claims
- 1793US8513081B2Carbon implant for workfunction adjustment in replacement gate transistorGUO DECHAO·Filed 2011·Granted Aug 20, 2013·12 cites·19 claims
- 1893US8288296B2Integrated circuit with replacement metal gates and dual dielectricsWONG KEITH KWONG HON·Filed 2010·Granted Oct 16, 2012·21 cites·15 claims
- 1992US9224675B1Automatic capacitance tuning for robust middle of the line contact and silicide applicationsIBM·Filed 2014·Granted Dec 29, 2015·18 cites·20 claims
- 2092US9171954B2FinFET structure and method to adjust threshold voltage in a FinFET structureIBM·Filed 2014·Granted Oct 27, 2015·9 cites·14 claims
- 2192US8866214B2Vertical transistor having an asymmetric gateGUO DECHAO·Filed 2011·Granted Oct 21, 2014·13 cites·11 claims
- 2292US8729702B1Copper seed layer for an interconnect structure having a doping concentration level gradientST MICROELECTRONICS INC·Filed 2012·Granted May 20, 2014·13 cites·26 claims
- 2392US8450178B2Borderless contacts for semiconductor devicesCHENG KANGGUO·Filed 2012·Granted May 28, 2013·10 cites·10 claims
- 2492US7838873B2Structure for stochastic integrated circuit personalizationIBM·Filed 2008·Granted Nov 23, 2010·17 cites·9 claims
- 2592US7750418B2Introduction of metal impurity to change workfunction of conductive electrodesIBM·Filed 2008·Granted Jul 6, 2010·18 cites·31 claims
- 2692US7598545B2Using metal/metal nitride bilayers as gate electrodes in self-aligned aggressively scaled CMOS devicesIBM·Filed 2005·Granted Oct 6, 2009·20 cites·28 claims
- 2792US6794262B2MIM capacitor structures and fabrication methods in dual-damascene structuresINFINEON TECHNOLOGIES AG·Filed 2002·Granted Sep 21, 2004·66 cites·32 claims
- 2891US8772782B2Transistor employing vertically stacked self-aligned carbon nanotubesCAO QING·Filed 2011·Granted Jul 8, 2014·26 cites·25 claims
- 2991US8741700B1Non-volatile graphene nanomechanical switchIBM·Filed 2013·Granted Jun 3, 2014·8 cites·5 claims
- 3091US8525232B2Semiconductor structure having a wetting layerNOGAMI TAKESHI·Filed 2011·Granted Sep 3, 2013·13 cites·20 claims
- 3191US7473979B2Semiconductor integrated circuit devices having high-Q wafer back-side capacitorsIBM·Filed 2006·Granted Jan 6, 2009·18 cites·19 claims
- 3290US8581351B2Replacement gate with reduced gate leakage currentANDO TAKASHI·Filed 2011·Granted Nov 12, 2013·10 cites·20 claims
- 3390US8569135B2Replacement gate electrode with planar work function material layersGUO DECHAO·Filed 2011·Granted Oct 29, 2013·10 cites·12 claims
- 3490US8530971B2Borderless contacts for semiconductor devicesCHENG KANGGUO·Filed 2009·Granted Sep 10, 2013·14 cites·10 claims
- 3590US8455365B2Self-aligned carbon electronics with embedded gate electrodeGUO DECHAO·Filed 2011·Granted Jun 4, 2013·9 cites·18 claims
- 3690US7923712B2Phase change memory element with a peripheral connection to a thin film electrodeIBM·Filed 2009·Granted Apr 12, 2011·17 cites·20 claims
- 3790US7851321B2Semiconductor integrated circuit devices having high-Q wafer back-side capacitorsIBM·Filed 2009·Granted Dec 14, 2010·16 cites·7 claims
- 3889US8796854B2Hybrid interconnect structure for performance improvement and reliability enhancementIBM·Filed 2013·Granted Aug 5, 2014·6 cites·19 claims
- 3989US8686514B2Multiple threshold voltages in field effect transistor devicesGUO DECHAO·Filed 2012·Granted Apr 1, 2014·9 cites·14 claims
- 4089US8023305B2High density planar magnetic domain wall memory apparatusIBM·Filed 2008·Granted Sep 20, 2011·11 cites·10 claims
- 4189US8009453B2High density planar magnetic domain wall memory apparatusIBM·Filed 2008·Granted Aug 30, 2011·15 cites·10 claims
- 4289US7754594B1Method for tuning the threshold voltage of a metal gate and high-k deviceIBM·Filed 2009·Granted Jul 13, 2010·17 cites·23 claims
- 4389US7691701B1Method of forming gate stack and structure thereofIBM·Filed 2009·Granted Apr 6, 2010·16 cites·27 claims
- 4489US7276796B1Formation of oxidation-resistant seed layer for interconnect applicationsIBM·Filed 2006·Granted Oct 2, 2007·17 cites·15 claims
- 4588US8324058B2Contacts for FET devicesCHENG KANGGUO·Filed 2010·Granted Dec 4, 2012·9 cites·17 claims
- 4688US7867895B2Method of fabricating improved interconnect structure with a via gouging feature absent profile damage to the interconnect dielectricIBM·Filed 2007·Granted Jan 11, 2011·13 cites·14 claims
- 4788US7727890B2High aspect ratio electroplated metal feature and methodIBM·Filed 2007·Granted Jun 1, 2010·4 cites·22 claims
- 4888US7425497B2Introduction of metal impurity to change workfunction of conductive electrodesIBM·Filed 2006·Granted Sep 16, 2008·14 cites·1 claims
- 4987US8519454B2Structure and process for metal fill in replacement metal gate integrationGUO DECHAO·Filed 2011·Granted Aug 27, 2013·9 cites·22 claims
- 5087US8268689B2Multiple threshold voltages in field effect transistor devicesGUO DECHAO·Filed 2010·Granted Sep 18, 2012·8 cites·16 claims
Showing the top 50 of 257 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →