Inventor · disambiguated record
Masaru Shinomiya
Also filed as: SHINOMIYA MASARU
18 granted patents·10 pending applications·88 citations·filing 1991–2022
92Inventor score
Top patents by PatentIndex Score
28 records- 0186US10586701B2Semiconductor base having a composition graded buffer layer stackSANKEN ELECTRIC CO LTD·Filed 2016·Granted Mar 10, 2020·5 cites·19 claims
- 0285US10115589B2Epitaxial substrate for electronic devices, electronic device, method for producing the epitaxial substrate for electronic devices, and method for producing the electronic deviceSHINETSU HANDOTAI KK·Filed 2015·Granted Oct 30, 2018·4 cites·8 claims
- 0384US9673052B2Silicon-based substrate having first and second portionsSANKEN ELECTRIC CO LTD·Filed 2014·Granted Jun 6, 2017·5 cites·8 claims
- 0481US10833184B2Semiconductor device substrate, semiconductor device, and method for manufacturing semiconductor device substrateSANKEN ELECTRIC CO LTD·Filed 2017·Granted Nov 10, 2020·3 cites·17 claims
- 0580US10553674B2Substrate for semiconductor device, semiconductor device, and method for manufacturing semiconductor deviceSANKEN ELECTRIC CO LTD·Filed 2016·Granted Feb 4, 2020·3 cites·20 claims
- 0680US10529842B2Semiconductor base substance having a boron containing buffer layer, semiconductor device including the same, and methods for manufacturing the semiconductor base substance and the semiconductor deviceSANKEN ELECTRIC CO LTD·Filed 2016·Granted Jan 7, 2020·3 cites·8 claims
- 0775US6413310B1Method for producing silicon single crystal wafer and silicon single crystal waferSHINETSU HANDOTAI KK·Filed 1999·Granted Jul 2, 2002·45 cites·24 claims
- 0874US9876101B2Semiconductor substrate and semiconductor deviceSANKEN ELECTRIC CO LTD·Filed 2015·Granted Jan 23, 2018·2 cites·11 claims
- 0971US9966259B2Silicon-based substrate, semiconductor device, and method for manufacturing semiconductor deviceSANKEN ELECTRIC CO LTD·Filed 2017·Granted May 8, 2018·1 cites·8 claims
- 1071US9520286B2Semiconductor substrate, semiconductor device and method of manufacturing the semiconductor deviceSANKEN ELECTRIC CO LTD·Filed 2014·Granted Dec 13, 2016·2 cites·20 claims
- 1164US10068985B2Method for manufacturing semiconductor substrate, method for manufacturing semiconductor device, semiconductor substrate, and semiconductor deviceSANKEN ELECTRIC CO LTD·Filed 2015·Granted Sep 4, 2018·1 cites·8 claims
- 1252US6878645B2Method for manufacturing silicon waferSHINETSU HANDOTAI KK·Filed 2001·Granted Apr 12, 2005·3 cites·6 claims
- 1351US2025323037A1Nitride semiconductor substrate and method for producing sameSHIN ETSU HANDOTAI CO LTD·Filed 2022·Application pending·0 cites
- 1451US2024297224A1Nitride semiconductor substrate and manufacturing method thereforSHINETSU HANDOTAI KK·Filed 2022·Application pending·0 cites
- 1550US2024079412A1Nitride semiconductor substrate and manufacturing method thereforSHINETSU HANDOTAI KK·Filed 2022·Application pending·0 cites
- 1650US2018245240A1Method for producing semiconductor epitaxial wafer and semiconductor epitaxial waferSHINETSU HANDOTAI KK·Filed 2018·Application pending·0 cites
- 1749US9938638B2Method for producing semiconductor epitaxial wafer and semiconductor epitaxial waferSHINETSU HANDOTAI KK·Filed 2015·Granted Apr 10, 2018·0 cites·9 claims
- 1848US12266520B2Method for manufacturing epitaxial wafer, silicon-based substrate for epitaxial growth, and epitaxial waferSHIN ETSU HANDOTAI CO LTD·Filed 2019·Granted Apr 1, 2025·0 cites·11 claims
- 1948US2023279581A1Method for producing nitride semiconductor wafer and nitride semiconductor waferSHINETSU HANDOTAI KK·Filed 2021·Application pending·0 cites
- 2046US9401420B2Semiconductor deviceSANKEN ELECTRIC CO LTD·Filed 2014·Granted Jul 26, 2016·0 cites·9 claims
- 2144US9281187B2Method for manufacturing nitride semiconductor deviceSHINETSU HANDOTAI KK·Filed 2013·Granted Mar 8, 2016·0 cites·8 claims
- 2241US2015028457A1Epitaxial substrate, semiconductor device, and method for manufacturing semiconductor deviceSHINETSU HANDOTAI KK·Filed 2013·Application pending·0 cites
- 2340US2015084163A1Epitaxial substrate, semiconductor device, and method for manufacturing semiconductor deviceSANKEN ELECTRIC CO LTD·Filed 2013·Application pending·0 cites
- 2439US10319587B2Method of manufacturing epitaxial wafer and silicon-based substrate for epitaxial growthSHINETSU HANDOTAI KK·Filed 2015·Granted Jun 11, 2019·0 cites·10 claims
- 2536US2003196588A1Silicon boat with protective film, method of manufacture thereof, and silicon wafer heat-treated using silicon boatFiled 2001·Application pending·0 cites
- 2635US5171708AMethod of boron diffusion into semiconductor wafers having reduced stacking faultsSHINETSU HANDOTAI KK·Filed 1991·Granted Dec 15, 1992·11 cites·4 claims
- 2734US2017323960A1Epitaxial wafer, semiconductor device, method for producing epitaxial wafer, and method for producing semiconductor deviceSANKEN ELECTRIC CO LTD·Filed 2015·Application pending·0 cites
- 2833US2017133217A1Semiconductor substrate and semiconductor deviceSANKEN ELECTRIC CO LTD·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →