Inventor · disambiguated record
Jonathan Zanhong Sun
Also filed as: SUN JONATHAN · SUN JONATHAN Z · SUN JONATHAN ZANHONG
41 granted patents·6 pending applications·2,203 citations·filing 1996–2024
98Inventor score
Top patents by PatentIndex Score
47 records- 0199US7376006B2Enhanced programming performance in a nonvolatile memory device having a bipolar programmable storage elementIBM·Filed 2005·Granted May 20, 2008·138 cites·12 claims
- 0299US5650958AMagnetic tunnel junctions with controlled magnetic responseIBM·Filed 1996·Granted Jul 22, 1997·521 cites·9 claims
- 0398US6256223B1Current-induced magnetic switching device and memory including the sameIBM·Filed 2000·Granted Jul 3, 2001·369 cites·9 claims
- 0498US5841692AMagnetic tunnel junction device with antiferromagnetically coupled pinned layerIBM·Filed 1997·Granted Nov 24, 1998·261 cites·5 claims
- 0597US10777247B1Spin-based storage elementIBM·Filed 2019·Granted Sep 15, 2020·14 cites·20 claims
- 0696US8008095B2Methods for fabricating contacts to pillar structures in integrated circuitsIBM·Filed 2007·Granted Aug 30, 2011·56 cites·16 claims
- 0796US6936840B2Phase-change memory cell and method of fabricating the phase-change memory cellIBM·Filed 2004·Granted Aug 30, 2005·290 cites·15 claims
- 0895US7525862B1Methods involving resetting spin-torque magnetic random access memory with domain wallIBM·Filed 2008·Granted Apr 28, 2009·48 cites·2 claims
- 0995US5792569AMagnetic devices and sensors based on perovskite manganese oxide materialsIBM·Filed 1996·Granted Aug 11, 1998·156 cites·17 claims
- 1094US7313013B2Spin-current switchable magnetic memory element and method of fabricating the memory elementIBM·Filed 2004·Granted Dec 25, 2007·63 cites·30 claims
- 1193US11778921B2Double magnetic tunnel junction deviceIBM·Filed 2020·Granted Oct 3, 2023·2 cites·20 claims
- 1293US9269415B1Utilization of the anomalous hall effect or polarized spin hall effect for MRAM applicationsIBM·Filed 2014·Granted Feb 23, 2016·19 cites·20 claims
- 1393US7602000B2Spin-current switched magnetic memory element suitable for circuit integration and method of fabricating the memory elementIBM·Filed 2003·Granted Oct 13, 2009·58 cites·38 claims
- 1493US6130814ACurrent-induced magnetic switching device and memory including the sameIBM·Filed 1998·Granted Oct 10, 2000·104 cites·20 claims
- 1591US11316104B2Inverted wide base double magnetic tunnel junction deviceIBM·Filed 2020·Granted Apr 26, 2022·2 cites·18 claims
- 1687US8283741B2Optimized free layer for spin torque magnetic random access memoryHU GUOHAN·Filed 2010·Granted Oct 9, 2012·7 cites·20 claims
- 1787US7993535B2Robust self-aligned process for sub-65nm current-perpendicular junction pillarsIBM·Filed 2007·Granted Aug 9, 2011·19 cites·18 claims
- 1884US10078496B2Magnetic tunnel junction (MTJ) based true random number generators (TRNG)IBM·Filed 2017·Granted Sep 18, 2018·4 cites·20 claims
- 1982US8406040B2Spin-torque based memory device using a magnesium oxide tunnel barrierWORLEDGE DANIEL C·Filed 2010·Granted Mar 26, 2013·5 cites·21 claims
- 2082US7894245B2Spin-current switchable magnetic memory element and method of fabricating the memory elementIBM·Filed 2007·Granted Feb 22, 2011·9 cites·21 claims
- 2182US7492631B1Methods involving resetting spin-torque magnetic random access memoryIBM·Filed 2008·Granted Feb 17, 2009·13 cites·1 claims
- 2281US8860105B2Spin-current switched magnetic memory element suitable for circuit integration and method of fabricating the memory elementIBM·Filed 2013·Granted Oct 14, 2014·2 cites·17 claims
- 2380US7943399B2Spin-current switched magnetic memory element suitable for circuit integration and method of fabricating the memory elementIBM·Filed 2009·Granted May 17, 2011·4 cites·14 claims
- 2479US7505308B1Systems involving spin-transfer magnetic random access memoryIBM·Filed 2008·Granted Mar 17, 2009·11 cites·2 claims
- 2578US8558332B2Spin-current switched magnetic memory element suitable for circuit integration and method of fabricating the memory elementSUN JONATHAN ZANHONG·Filed 2011·Granted Oct 15, 2013·2 cites·11 claims
- 2677US8270208B2Spin-torque based memory device with read and write current paths modulated with a non-linear shunt resistorGAIDIS MICHAEL C·Filed 2010·Granted Sep 18, 2012·4 cites·19 claims
- 2776US7459266B2Phase-change memory cell and method of fabricating the phase-change memory cellIBM·Filed 2005·Granted Dec 2, 2008·7 cites·1 claims
- 2873US10229722B2Three terminal spin hall MRAMIBM·Filed 2017·Granted Mar 12, 2019·3 cites·20 claims
- 2973US9355700B2Read circuit for memoryIBM·Filed 2015·Granted May 31, 2016·3 cites·4 claims
- 3071US8310863B2Spin-current switchable magnetic memory element and method of fabricating the memory elementSUN JONATHAN ZANHONG·Filed 2011·Granted Nov 13, 2012·3 cites·18 claims
- 3170US9647204B2Spin torque MRAM based on Co, Ir synthetic antiferromagnetic multilayerIBM·Filed 2014·Granted May 9, 2017·3 cites·15 claims
- 3269US11171283B2Modified double magnetic tunnel junction structure suitable for BEOL integrationIBM·Filed 2019·Granted Nov 9, 2021·2 cites·26 claims
- 3360US11289644B2Magnetic tunnel junction having all-around structureIBM·Filed 2019·Granted Mar 29, 2022·1 cites·18 claims
- 3459US2025275483A1Perpendicular spin-orbit torque magnetic random access memoryIBM·Filed 2024·Application pending·0 cites
- 3558US2015001655A1Spin-current switched magnetic memory element suitable for circuit integration and method of fabricating the memory elementIBM·Filed 2014·Application pending·0 cites
- 3655US2012329177A1Spin-torque magnetoresistive structures with bilayer free layerABRAHAM DAVID WILLIAM·Filed 2012·Application pending·0 cites
- 3755US2010320550A1Spin-Torque Magnetoresistive Structures with Bilayer Free LayerIBM·Filed 2009·Application pending·0 cites
- 3854US11487508B2Magnetic tunnel junction based true random number generatorIBM·Filed 2019·Granted Nov 1, 2022·0 cites·20 claims
- 3954US2024324473A1Chiral spin-current supply structure for mtj-based memoryIBM·Filed 2023·Application pending·0 cites
- 4052US11972785B2MRAM structure with enhanced magnetics using seed engineeringIBM·Filed 2021·Granted Apr 30, 2024·0 cites·21 claims
- 4151US9715917B2Spin torque MRAM based on Co, Ir synthetic antiferromagnetic multilayerIBM·Filed 2016·Granted Jul 25, 2017·0 cites·20 claims
- 4249US11574667B2Resonant synthetic antiferromagnet reference layered structureIBM·Filed 2020·Granted Feb 7, 2023·0 cites·20 claims
- 4349US8927301B2Spin-torque based memory device with read and write current paths modulated with a non-linear shunt resistorGAIDIS MICHAEL C·Filed 2012·Granted Jan 6, 2015·0 cites·20 claims
- 4446US8861262B2Spin-current switchable magnetic memory element and method of fabricating the memory elementSUN JONATHAN ZANHONG·Filed 2012·Granted Oct 14, 2014·0 cites·20 claims
- 4544US9105342B2Read circuit for memoryIBM·Filed 2013·Granted Aug 11, 2015·0 cites·11 claims
- 4640US2007274125A1Enhanced Programming Performance in a Nonvolatile Memory Device Having a Bipolar Programmable Storage ElementIBM·Filed 2007·Application pending·0 cites
- 4739US11823723B2Memory device with spin-harvesting structureIBM·Filed 2021·Granted Nov 21, 2023·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →