Spin-current switched magnetic memory element suitable for circuit integration and method of fabricating the memory element

Abstract

A method of fabricating a spin-current switched magnetic memory element includes providing a wafer having a bottom electrode, forming a plurality of layers, such that interfaces between the plurality of layers are formed in situ, the plurality of layers includes a plurality of magnetic layers, at least one of the plurality of magnetic layers having a perpendicular magnetic anisotropy component and including a current-switchable magnetic moment, and at least one barrier layer formed adjacent to the plurality of magnetic layers, lithographically defining a pillar structure from the plurality of layers, and forming a top electrode on the pillar structure.

What is claimed is: 
     
         1 . A method of fabricating a spin-current switched magnetic memory element, said method comprising:
 providing a wafer including a bottom electrode;   forming a plurality of layers, such that interfaces between said plurality of layers are formed in situ, said plurality of layers comprising:
 a plurality of magnetic layers, at least one of said plurality of magnetic layers having a perpendicular magnetic anisotropy component and comprising a current-switchable magnetic moment; and 
 at least one barrier layer formed adjacent to said plurality of magnetic layers; 
   lithographically defining a pillar structure from said plurality of layers; and   forming a top electrode on said pillar structure.   
     
     
         2 . The method according to  claim 1 , wherein said at least one barrier layer comprises a plurality of barrier layers which are alternately formed with said plurality of magnetic layers. 
     
     
         3 . The method according to  claim 2 , wherein said perpendicular magnetic anisotropy component is formed at an interface between a magnetic layer and non-magnetic layer of a composite layer. 
     
     
         4 . A spin-current switched magnetic memory element, comprising:
 a plurality of magnetic layers, at least one of said plurality of magnetic layers including a perpendicular magnetic anisotropy component and comprising a current-switchable magnetic moment;   at least one barrier layer formed adjacent to said plurality of magnetic layers;   a plurality of leads; and   a pillar formed between the plurality of leads.   
     
     
         5 . The spin-current switched magnetic memory element according to  claim 4 , wherein said at least one barrier layer is formed in said pillar adjacent to said plurality of magnetic layers. 
     
     
         6 . The spin-current switched magnetic memory element according to  claim 5 , wherein said plurality of leads comprises first and second leads, and
 wherein the pillar is formed between said first and second leads.   
     
     
         7 . The spin-current switched magnetic memory element according to  claim 5 , wherein said current-switchable magnetic moment comprises a spin-current-switchable magnetic moment. 
     
     
         8 . The spin-current switched magnetic memory element according to  claim 4 , wherein said current-switchable magnetic moment comprises a spin-current-switchable magnetic moment. 
     
     
         9 . The spin-current switched magnetic memory element according to  claim 4 , wherein said plurality of magnetic layers comprises at least one composite layer. 
     
     
         10 . The spin-current switched magnetic memory element according to  claim 9 , wherein said at least one composite layer comprises a platinum layer and a cobalt layer. 
     
     
         11 . The spin-current switched magnetic memory element according to  claim 9 , wherein said at least one composite layer comprises a gold layer and a cobalt layer. 
     
     
         12 . The spin-current switched magnetic memory element according to  claim 9 , wherein said at least one composite layer comprises a nickel layer and a copper layer. 
     
     
         13 . The spin-current switched magnetic memory element according to  claim 9 , wherein said perpendicular magnetic anisotropy component is formed at an interface between a magnetic layer and non-magnetic layer of said at least one composite layer. 
     
     
         14 . The spin-current switched magnetic memory element according to  claim 9 , wherein said perpendicular magnetic anisotropy component comprises a bulk perpendicular magnetic anisotropy component which is formed in a magnetic layer of the said at least one composite layer.