Inventor · disambiguated record
Raul-Adrian Cernea
Also filed as: CERNEA RAUL A · CERNEA RAUL ADRIAN
162 granted patents·10 pending applications·10,388 citations·filing 1988–2023
99Inventor score
Files withSANDISK CORP116SUNRISE MEMORY CORP14SANDISK TECHNOLOGIES INC12CERNEA RAUL-ADRIAN9SANDISK 3D LLC6
Top patents by PatentIndex Score
172 records- 0199US10950616B23-dimensional NOR strings with segmented shared source regionsSUNRISE MEMORY CORP·Filed 2020·Granted Mar 16, 2021·16 cites·4 claims
- 0299US7535769B2Time-dependent compensation currents in non-volatile memory read operationsSANDISK CORP·Filed 2008·Granted May 19, 2009·420 cites·16 claims
- 0399US7196946B2Compensating for coupling in non-volatile storageSANDISK CORP·Filed 2005·Granted Mar 27, 2007·189 cites·20 claims
- 0499US7193898B2Compensation currents in non-volatile memory read operationsSANDISK CORP·Filed 2005·Granted Mar 20, 2007·178 cites·56 claims
- 0599US7158421B2Use of data latches in multi-phase programming of non-volatile memoriesSANDISK CORP·Filed 2005·Granted Jan 2, 2007·138 cites·17 claims
- 0699US7135910B2Charge pump with fibonacci number multiplicationSANDISK CORP·Filed 2005·Granted Nov 14, 2006·74 cites·5 claims
- 0799US7046568B2Memory sensing circuit and method for low voltage operationSANDISK CORP·Filed 2004·Granted May 16, 2006·303 cites·36 claims
- 0899US7023736B2Non-volatile memory and method with improved sensingSANDISK CORP·Filed 2003·Granted Apr 4, 2006·289 cites·31 claims
- 0999US6987693B2Non-volatile memory and method with reduced neighboring field errorsSANDISK CORP·Filed 2002·Granted Jan 17, 2006·526 cites·25 claims
- 1099US6956770B2Non-volatile memory and method with bit line compensation dependent on neighboring operating modesSANDISK CORP·Filed 2003·Granted Oct 18, 2005·630 cites·25 claims
- 1199US6781877B2Techniques for reducing effects of coupling between storage elements of adjacent rows of memory cellsSANDISK CORP·Filed 2002·Granted Aug 24, 2004·520 cites·19 claims
- 1299US6560152B1Non-volatile memory with temperature-compensated data readSANDISK CORP·Filed 2001·Granted May 6, 2003·260 cites·12 claims
- 1399US5890192AConcurrent write of multiple chunks of data into multiple subarrays of flash EEPROMSANDISK CORP·Filed 1996·Granted Mar 30, 1999·531 cites·13 claims
- 1499US5508971AProgrammable power generation circuit for flash EEPROM memory systemsSANDISK CORP·Filed 1994·Granted Apr 16, 1996·265 cites·4 claims
- 1598US7590002B2Resistance sensing and compensation for non-volatile storageSANDISK CORP·Filed 2006·Granted Sep 15, 2009·72 cites·25 claims
- 1698US7324393B2Method for compensated sensing in non-volatile memorySANDISK CORP·Filed 2005·Granted Jan 29, 2008·77 cites·18 claims
- 1798US7321509B2Compensating for coupling in non-volatile storageSANDISK CORP·Filed 2007·Granted Jan 22, 2008·105 cites·19 claims
- 1898US7196931B2Non-volatile memory and method with reduced source line bias errorsSANDISK CORP·Filed 2002·Granted Mar 27, 2007·159 cites·30 claims
- 1998US7173854B2Non-volatile memory and method with compensation for source line bias errorsSANDISK CORP·Filed 2005·Granted Feb 6, 2007·77 cites·40 claims
- 2098US7170802B2Flexible and area efficient column redundancy for non-volatile memoriesSANDISK CORP·Filed 2003·Granted Jan 30, 2007·176 cites·26 claims
- 2198US6983428B2Highly compact non-volatile memory and method thereofSANDISK CORP·Filed 2002·Granted Jan 3, 2006·146 cites·30 claims
- 2298US6870768B2Techniques for reducing effects of coupling between storage elements of adjacent rows of memory cellsSANDISK CORP·Filed 2004·Granted Mar 22, 2005·201 cites·6 claims
- 2398US6771536B2Operating techniques for reducing program and read disturbs of a non-volatile memorySANDISK CORP·Filed 2002·Granted Aug 3, 2004·494 cites·58 claims
- 2498US6552932B1Segmented metal bitlinesSANDISK CORP·Filed 2001·Granted Apr 22, 2003·178 cites·42 claims
- 2598US5592420AProgrammable power generation circuit for flash EEPROM memory systemsSANDISK CORP·Filed 1995·Granted Jan 7, 1997·207 cites·13 claims
- 2698US5563825AProgrammable power generation circuit for flash eeprom memory systemsSANDISK CORP·Filed 1995·Granted Oct 8, 1996·157 cites·3 claims
- 2798US5422842AMethod and circuit for simultaneously programming and verifying the programming of selected EEPROM cellsSUNDISK CORP·Filed 1993·Granted Jun 6, 1995·204 cites·3 claims
- 2897US11335693B23-dimensional NOR strings with segmented shared source regionsSUNRISE MEMORY CORP·Filed 2021·Granted May 17, 2022·5 cites·11 claims
- 2997US7616498B2Non-volatile storage system with resistance sensing and compensationSANDISK CORP·Filed 2006·Granted Nov 10, 2009·62 cites·20 claims
- 3097US7532514B2Non-volatile memory and method with bit line to bit line coupled compensationSANDISK CORP·Filed 2007·Granted May 12, 2009·50 cites·24 claims
- 3197US7324389B2Non-volatile memory with redundancy data buffered in remote buffer circuitsSANDISK CORP·Filed 2006·Granted Jan 29, 2008·51 cites·13 claims
- 3297US7170784B2Non-volatile memory and method with control gate compensation for source line bias errorsSANDISK CORP·Filed 2005·Granted Jan 30, 2007·51 cites·24 claims
- 3397US6044019ANon-volatile memory with improved sensing and method thereforSANDISK CORP·Filed 1998·Granted Mar 28, 2000·254 cites·19 claims
- 3497US5621685AProgrammable power generation circuit for flash EEPROM memory systemsSANDISK CORP·Filed 1995·Granted Apr 15, 1997·134 cites·6 claims
- 3597US5495442AMethod and circuit for simultaneously programming and verifying the programming of selected EEPROM cellsSANDISK CORP·Filed 1995·Granted Feb 27, 1996·174 cites·10 claims
- 3696US10608008B23-dimensional nor strings with segmented shared source regionsSUNRISE MEMORY CORP·Filed 2018·Granted Mar 31, 2020·17 cites·9 claims
- 3796US9331091B13D NAND memory with socketed floating gate cells and process thereforSANDISK TECHNOLOGIES INC·Filed 2015·Granted May 3, 2016·11 cites·19 claims
- 3896US7215574B2Non-volatile memory and method with bit line compensation dependent on neighboring operating modesSANDISK CORP·Filed 2005·Granted May 8, 2007·44 cites·14 claims
- 3996US7177197B2Latched programming of memory and methodSANDISK CORP·Filed 2004·Granted Feb 13, 2007·98 cites·20 claims
- 4096US7113023B2Area efficient charge pumpSANDISK CORP·Filed 2005·Granted Sep 26, 2006·55 cites·10 claims
- 4196US7064980B2Non-volatile memory and method with bit line coupled compensationSANDISK CORP·Filed 2003·Granted Jun 20, 2006·99 cites·30 claims
- 4296US6922096B2Area efficient charge pumpSANDISK CORP·Filed 2003·Granted Jul 26, 2005·113 cites·21 claims
- 4396US6741502B1Background operation for memory cellsSANDISK CORP·Filed 2001·Granted May 25, 2004·94 cites·23 claims
- 4496US6542956B1Latched address multi-chunk write to EEPROMSANDISK CORP·Filed 2000·Granted Apr 1, 2003·82 cites·12 claims
- 4596US5596532AFlash EEPROM self-adaptive voltage generation circuit operative within a continuous voltage source rangeSANDISK CORP·Filed 1995·Granted Jan 21, 1997·181 cites·34 claims
- 4695US9825048B2Process for word line connections in 3D memorySANDISK TECHNOLOGIES LLC·Filed 2015·Granted Nov 21, 2017·9 cites·19 claims
- 4795US7508721B2Use of data latches in multi-phase programming of non-volatile memoriesSANDISK CORP·Filed 2006·Granted Mar 24, 2009·42 cites·17 claims
- 4895US7405985B2Flexible and area efficient column redundancy for non-volatile memoriesSANDISK CORP·Filed 2007·Granted Jul 29, 2008·39 cites·8 claims
- 4995US7224605B1Non-volatile memory with redundancy data buffered in data latches for defective locationsSANDISK CORP·Filed 2006·Granted May 29, 2007·51 cites·13 claims
- 5095US6801454B2Voltage generation circuitry having temperature compensationSANDISK CORP·Filed 2002·Granted Oct 5, 2004·99 cites·21 claims
Showing the top 50 of 172 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →