Inventor · disambiguated record
Tony P. Chiang
Also filed as: CHIANG TONY · CHIANG TONY P · CHIANG TONY PING-CHEN
270 granted patents·66 pending applications·7,238 citations·filing 1997–2021
99Inventor score
Files withINTERMOLECULAR INC151APPLIED MATERIALS INC39CHIANG TONY P21WANG YUN17NOVELLUS SYSTEMS INC10
Top patents by PatentIndex Score
336 records- 0199US8440259B2Vapor based combinatorial processingCHIANG TONY P·Filed 2008·Granted May 14, 2013·539 cites·19 claims
- 0299US6878402B2Method and apparatus for improved temperature control in atomic layer depositionNOVELLUS SYSTEMS INC·Filed 2001·Granted Apr 12, 2005·499 cites·19 claims
- 0399US6428859B1Sequential method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD)ANGSTRON SYSTEMS INC·Filed 2001·Granted Aug 6, 2002·810 cites·51 claims
- 0498US8343813B2Resistive-switching memory elements having improved switching characteristicsINTERMOLECULAR INC·Filed 2010·Granted Jan 1, 2013·30 cites·18 claims
- 0598US8144498B2Resistive-switching nonvolatile memory elementsKUMAR PRAGATI·Filed 2008·Granted Mar 27, 2012·111 cites·9 claims
- 0698US7972897B2Methods for forming resistive switching memory elementsINTERMOLECULAR INC·Filed 2007·Granted Jul 5, 2011·75 cites·24 claims
- 0798US7629198B2Methods for forming nonvolatile memory elements with resistive-switching metal oxidesINTERMOLECULAR INC·Filed 2007·Granted Dec 8, 2009·118 cites·40 claims
- 0898US7309658B2Molecular self-assembly in substrate processingINTERMOLECULAR INC·Filed 2005·Granted Dec 18, 2007·97 cites·21 claims
- 0998US6569501B2Sequential method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD)ANGSTRON SYSTEMS INC·Filed 2002·Granted May 27, 2003·238 cites·53 claims
- 1098US6416822B1Continuous method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD)ANGSTRON SYSTEMS INC·Filed 2001·Granted Jul 9, 2002·416 cites·64 claims
- 1197US8183553B2Resistive switching memory element including doped silicon electrodePHATAK PRASHANT·Filed 2009·Granted May 22, 2012·135 cites·20 claims
- 1297US8143092B2Methods for forming resistive switching memory elements by heating deposited layersKUMAR PRAGATI·Filed 2009·Granted Mar 27, 2012·92 cites·13 claims
- 1397US7824935B2Methods of combinatorial processing for screening multiple samples on a semiconductor substrateINTERMOLECULAR INC·Filed 2008·Granted Nov 2, 2010·25 cites·8 claims
- 1497US7253109B2Method of depositing a tantalum nitride/tantalum diffusion barrier layer systemAPPLIED MATERIALS INC·Filed 2005·Granted Aug 7, 2007·44 cites·67 claims
- 1597US6919275B2Method of preventing diffusion of copper through a tantalum-comprising barrier layerAPPLIED MATERIALS INC·Filed 2004·Granted Jul 19, 2005·87 cites·4 claims
- 1697US6630201B2Adsorption process for atomic layer depositionANGSTRON SYSTEMS INC·Filed 2001·Granted Oct 7, 2003·337 cites·20 claims
- 1796US9362231B2Molecular self-assembly in substrate processingINTERMOLECULAR INC·Filed 2015·Granted Jun 7, 2016·9 cites·12 claims
- 1896US9076523B2Methods of manufacturing embedded bipolar switching resistive memoryINTERMOLECULAR INC·Filed 2012·Granted Jul 7, 2015·25 cites·14 claims
- 1996US8766234B1Current selector for non-volatile memory in a cross bar array based on defect and band engineering metal-dielectric-metal stacksINTERMOLECULAR INC·Filed 2012·Granted Jul 1, 2014·28 cites·20 claims
- 2096US8466005B2Method for forming metal oxides and silicides in a memory devicePRAMANIK DIPANKAR·Filed 2011·Granted Jun 18, 2013·23 cites·20 claims
- 2196US8334015B2Vapor based combinatorial processingCHIANG TONY P·Filed 2008·Granted Dec 18, 2012·22 cites·9 claims
- 2296US8163631B2Methods for discretized processing and process sequence integration of regions of a substrateCHIANG TONY P·Filed 2011·Granted Apr 24, 2012·15 cites·16 claims
- 2396US8153535B1Combinatorial plasma enhanced deposition techniquesSHANKER SUNIL·Filed 2011·Granted Apr 10, 2012·8 cites·8 claims
- 2496US8129288B2Combinatorial plasma enhanced deposition techniquesSHANKER SUNIL·Filed 2009·Granted Mar 6, 2012·17 cites·29 claims
- 2596US8072795B1Biploar resistive-switching memory with a single diode per memory cellWANG YUN·Filed 2009·Granted Dec 6, 2011·39 cites·13 claims
- 2696US7863087B1Methods for forming resistive-switching metal oxides for nonvolatile memory elementsINTERMOLECULAR INC·Filed 2008·Granted Jan 4, 2011·25 cites·24 claims
- 2796US7678607B2Methods for forming resistive switching memory elementsINTERMOLECULAR INC·Filed 2007·Granted Mar 16, 2010·40 cites·31 claims
- 2896US7544398B1Controlled nano-doping of ultra thin filmsUNIVESITY OF CALIFORNIA·Filed 2006·Granted Jun 9, 2009·433 cites·25 claims
- 2996US7544574B2Methods for discretized processing of regions of a substrateINTERMOLECULAR INC·Filed 2006·Granted Jun 9, 2009·38 cites·24 claims
- 3096US6800173B2Variable gas conductance control for a process chamberNOVELLUS SYSTEMS INC·Filed 2001·Granted Oct 5, 2004·134 cites·15 claims
- 3196US6413383B1Method for igniting a plasma in a sputter reactorAPPLIED MATERIALS INC·Filed 2000·Granted Jul 2, 2002·92 cites·15 claims
- 3296US6328871B1Barrier layer for electroplating processesAPPLIED MATERIALS INC·Filed 1999·Granted Dec 11, 2001·161 cites·12 claims
- 3396US6287977B1Method and apparatus for forming improved metal interconnectsAPPLIED MATERIALS INC·Filed 1998·Granted Sep 11, 2001·161 cites·18 claims
- 3496US6066892ACopper alloy seed layer for copper metallization in an integrated circuitAPPLIED MATERIALS INC·Filed 1998·Granted May 23, 2000·185 cites·20 claims
- 3595US8866121B2Current-limiting layer and a current-reducing layer in a memory deviceWANG YUN·Filed 2012·Granted Oct 21, 2014·14 cites·17 claims
- 3695US8409354B2Vapor based combinatorial processingCHIANG TONY P·Filed 2011·Granted Apr 2, 2013·14 cites·13 claims
- 3795US8294219B2Nonvolatile memory element including resistive switching metal oxide layersMALHOTRA SANDRA G·Filed 2008·Granted Oct 23, 2012·39 cites·15 claims
- 3895US8148273B1Combinatorial plasma enhanced deposition techniquesSHANKER SUNIL·Filed 2011·Granted Apr 3, 2012·6 cites·9 claims
- 3995US8062918B2Surface treatment to improve resistive-switching characteristicsMILLER MICHAEL·Filed 2008·Granted Nov 22, 2011·23 cites·23 claims
- 4095US7902064B1Method of forming a layer to enhance ALD nucleation on a substrateINTERMOLECULAR INC·Filed 2008·Granted Mar 8, 2011·37 cites·14 claims
- 4195US6582569B1Process for sputtering copper in a self ionized plasmaAPPLIED MATERIALS INC·Filed 2000·Granted Jun 24, 2003·75 cites·21 claims
- 4294US8821987B2Combinatorial processing using a remote plasma sourceINTERMOLECULAR INC·Filed 2012·Granted Sep 2, 2014·8 cites·9 claims
- 4394US8318611B2Combinatorial plasma enhanced deposition techniquesSHANKER SUNIL·Filed 2011·Granted Nov 27, 2012·5 cites·8 claims
- 4494US8084400B2Methods for discretized processing and process sequence integration of regions of a substrateCHIANG TONY P·Filed 2006·Granted Dec 27, 2011·16 cites·23 claims
- 4594US8011317B2Advanced mixing system for integrated tool having site-isolated reactorsINTERMOLECULAR INC·Filed 2006·Granted Sep 6, 2011·23 cites·29 claims
- 4694US7704789B2Methods for forming resistive switching memory elementsINTERMOLECULAR INC·Filed 2007·Granted Apr 27, 2010·29 cites·14 claims
- 4794US6758947B2Damage-free sculptured coating depositionAPPLIED MATERIALS INC·Filed 2001·Granted Jul 6, 2004·47 cites·29 claims
- 4894US6559061B2Method and apparatus for forming improved metal interconnectsAPPLIED MATERIALS INC·Filed 2001·Granted May 6, 2003·63 cites·16 claims
- 4994US6398929B1Plasma reactor and shields generating self-ionized plasma for sputteringAPPLIED MATERIALS INC·Filed 1999·Granted Jun 4, 2002·128 cites·22 claims
- 5094US6160315ACopper alloy via structureAPPLIED MATERIALS INC·Filed 2000·Granted Dec 12, 2000·73 cites·24 claims
Showing the top 50 of 336 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →