Inventor · disambiguated record
Vivien Schroeder
Also filed as: SCHROEDER VIVIEN
7 granted patents·1 pending application·38 citations·filing 2010–2014
82Inventor score
Top patents by PatentIndex Score
8 records- 0190US8247281B2Technique for exposing a placeholder material in a replacement gate approach by modifying a removal rate of stressed dielectric overlayersHEMPEL KLAUS·Filed 2010·Granted Aug 21, 2012·13 cites·18 claims
- 0284US8298894B2Work function adjustment in high-k metal gate electrode structures by selectively removing a barrier layerLENSKI MARKUS·Filed 2010·Granted Oct 30, 2012·8 cites·12 claims
- 0383US8790975B2Semiconductor device comprising a capacitor formed in the metallization system based on dummy metal featuresBAARS PETER·Filed 2011·Granted Jul 29, 2014·6 cites·22 claims
- 0482US8679924B2Self-aligned multiple gate transistor formed on a bulk substrateWEI ANDY·Filed 2011·Granted Mar 25, 2014·7 cites·14 claims
- 0578US8440559B2Work function adjustment in high-K metal gate electrode structures by selectively removing a barrier layerGLOBALFOUNDRIES INC·Filed 2012·Granted May 14, 2013·4 cites·20 claims
- 0651US2015028431A1Mol insitu pt rework sequenceGLOBALFOUNDRIES INC·Filed 2014·Application pending·0 cites
- 0749US8357575B2Technique for exposing a placeholder material in a replacement gate approach by modifying a removal rate of stressed dielectric overlayersGLOBALFOUNDRIES INC·Filed 2012·Granted Jan 22, 2013·0 cites·12 claims
- 0848US8883586B2Mol insitu Pt rework sequenceBAARS PETER·Filed 2011·Granted Nov 11, 2014·0 cites·12 claims
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