Inventor · disambiguated record
Milind Kulkarni
Also filed as: KULKARNI MILIND · KULKARNI MILIND S · KULKARNI MILIND SHRIKANT
14 granted patents·6 pending applications·175 citations·filing 2000–2012
92Inventor score
Files withMEMC ELECTRONIC MATERIALS7KULKARNI MILIND S5SREEDHARAMURTHY HARIPRASAD2BHUSARAPU SATISH1KULKARNI MILIND1
Top patents by PatentIndex Score
20 records- 0190US8673248B2Silicon material with controlled agglomerated point defects and oxygen clusters induced by the lateral surfaceKULKARNI MILIND S·Filed 2007·Granted Mar 18, 2014·16 cites·19 claims
- 0284US6294469B1Silicon wafering process flowPLASMASIL LLC·Filed 2000·Granted Sep 25, 2001·59 cites·13 claims
- 0382US6312517B1Multi-stage arsenic doping process to achieve low resistivity in silicon crystal grown by czochralski methodMEMC ELECTRONIC MATERIALS·Filed 2000·Granted Nov 6, 2001·21 cites·8 claims
- 0481US7878883B2Wire saw ingot slicing system and method with ingot preheating, web preheating, slurry temperature control and/or slurry flow rate controlMEMC ELECTRONICS MATERIALS INC·Filed 2007·Granted Feb 1, 2011·10 cites·17 claims
- 0580US7132091B2Single crystal silicon ingot having a high arsenic concentrationMEMC ELECTRONIC MATERIALS·Filed 2002·Granted Nov 7, 2006·20 cites·6 claims
- 0676US8404206B2Methods for producing polycrystalline silicon that reduce the deposition of silicon on reactor wallsKULKARNI MILIND S·Filed 2011·Granted Mar 26, 2013·2 cites·11 claims
- 0776US8216362B2Controlling agglomerated point defect and oxygen cluster formation induced by the lateral surface of a silicon single crystal during CZ growthKULKARNI MILIND S·Filed 2007·Granted Jul 10, 2012·5 cites·20 claims
- 0875US8906313B2Fluidized bed reactor systemsKULKARNI MILIND S·Filed 2009·Granted Dec 9, 2014·3 cites·18 claims
- 0973US6808781B2Silicon wafers with stabilized oxygen precipitate nucleation centers and process for making the sameMEMC ELECTRONIC MATERIALS·Filed 2002·Granted Oct 26, 2004·19 cites·48 claims
- 1070US8728574B2Methods for introducing a first gas and a second gas into a reaction chamberKULKARNI MILIND S·Filed 2012·Granted May 20, 2014·1 cites·13 claims
- 1170US7201800B2Process for making silicon wafers with stabilized oxygen precipitate nucleation centersMEMC ELECTRONIC MATERIALS·Filed 2004·Granted Apr 10, 2007·15 cites·28 claims
- 1257US8147613B2Crystal puller and method for growing a monocrystalline ingotKULKARNI MILIND·Filed 2003·Granted Apr 3, 2012·4 cites·39 claims
- 1352US2009324819A1Methods for increasing polycrystalline silicon reactor productivity by recycle of silicon finesMEMC ELECTRONIC MATERIALS·Filed 2009·Application pending·0 cites
- 1449US8398765B2Controlling a melt-solid interface shape of a growing silicon crystal using an unbalanced magnetic field and iso-rotationSREEDHARAMURTHY HARIPRASAD·Filed 2009·Granted Mar 19, 2013·0 cites·19 claims
- 1549US2011129889A1Process for Production of Ethanol from Lignocellulosic MaterialPRAJ IND LTD·Filed 2009·Application pending·0 cites
- 1644US2011250366A1Bell jar for siemens reactor including thermal radiation shieldMEMC ELECTRONIC MATERIALS·Filed 2011·Application pending·0 cites
- 1743US8551247B2Generating a pumping force in a silicon melt by applying a time-varying magnetic fieldSREEDHARAMURTHY HARIPRASAD·Filed 2009·Granted Oct 8, 2013·0 cites·16 claims
- 1841US2006005761A1Method and apparatus for growing silicon crystal by controlling melt-solid interface shape as a function of axial lengthMEMC ELECTRONIC MATERIALS·Filed 2005·Application pending·0 cites
- 1940US2012100059A1Production of Polycrystalline Silicon By The Thermal Decomposition of Trichlorosilane In A Fluidized Bed ReactorBHUSARAPU SATISH·Filed 2010·Application pending·0 cites
- 2030US2002034881A1Process for etching silicon wafersFiled 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →