Assignee
MEMC ELECTRONIC MATERIALS
US·285 granted patents·76 pending applications·7,278 citations·filing 1991–2013
Top patents by PatentIndex Score
361 records- 0197US5518549ASusceptor and baffle thereforMEMC ELECTRONIC MATERIALS·Filed 1995·Granted May 21, 1996·560 cites·22 claims
- 0296US7033168B1Semiconductor wafer boat for a vertical furnaceMEMC ELECTRONIC MATERIALS·Filed 2005·Granted Apr 25, 2006·63 cites·20 claims
- 0395US8884310B2Direct formation of graphene on semiconductor substratesMEMC ELECTRONIC MATERIALS·Filed 2012·Granted Nov 11, 2014·22 cites·13 claims
- 0495US6444027B1Modified susceptor for use in chemical vapor deposition processMEMC ELECTRONIC MATERIALS·Filed 2000·Granted Sep 3, 2002·82 cites·42 claims
- 0595US5919302ALow defect density vacancy dominated siliconMEMC ELECTRONIC MATERIALS·Filed 1998·Granted Jul 6, 1999·139 cites·40 claims
- 0694US9117670B2Inject insert liner assemblies for chemical vapor deposition systems and methods of using sameMEMC ELECTRONIC MATERIALS·Filed 2013·Granted Aug 25, 2015·20 cites·23 claims
- 0794US7930058B2Nanotopography control and optimization using feedback from warp dataMEMC ELECTRONIC MATERIALS·Filed 2007·Granted Apr 19, 2011·28 cites·19 claims
- 0894US7135351B2Method for controlling of thermal donor formation in high resistivity CZ siliconMEMC ELECTRONIC MATERIALS·Filed 2005·Granted Nov 14, 2006·26 cites·36 claims
- 0993US9029228B2Direct and sequential formation of monolayers of boron nitride and graphene on substratesMEMC ELECTRONIC MATERIALS·Filed 2013·Granted May 12, 2015·24 cites·42 claims
- 1093US6562123B2Process for growing defect-free silicon wherein the grown silicon is cooled in a separate chamberMEMC ELECTRONIC MATERIALS·Filed 2001·Granted May 13, 2003·39 cites·15 claims
- 1192US5976247ASurface-treated crucibles for improved zero dislocation performanceMEMC ELECTRONIC MATERIALS·Filed 1995·Granted Nov 2, 1999·130 cites·80 claims
- 1291US8042697B2Low thermal mass semiconductor wafer supportMEMC ELECTRONIC MATERIALS·Filed 2008·Granted Oct 25, 2011·16 cites·19 claims
- 1391US7878562B2Semiconductor wafer carrier bladeMEMC ELECTRONIC MATERIALS·Filed 2007·Granted Feb 1, 2011·22 cites·21 claims
- 1491US7485928B2Arsenic and phosphorus doped silicon wafer substrates having intrinsic getteringMEMC ELECTRONIC MATERIALS·Filed 2005·Granted Feb 3, 2009·20 cites·26 claims
- 1591US7323421B2Silicon wafer etching process and compositionMEMC ELECTRONIC MATERIALS·Filed 2005·Granted Jan 29, 2008·26 cites·17 claims
- 1691US6409827B2Low defect density silicon and a process for producing low defect density silicon wherein V/G0 is controlled by controlling heat transfer at the melt/solid interfaceMEMC ELECTRONIC MATERIALS·Filed 2001·Granted Jun 25, 2002·30 cites·32 claims
- 1791US6330971B1Radio frequency identification system and method for tracking silicon wafersMEMC ELECTRONIC MATERIALS·Filed 2000·Granted Dec 18, 2001·164 cites·20 claims
- 1891US6230720B1Single-operation method of cleaning semiconductors after final polishingMEMC ELECTRONIC MATERIALS·Filed 2000·Granted May 15, 2001·81 cites·54 claims
- 1990US7008308B2Wafer carrierMEMC ELECTRONIC MATERIALS·Filed 2003·Granted Mar 7, 2006·46 cites·25 claims
- 2090US6287380B1Low defect density siliconMEMC ELECTRONIC MATERIALS·Filed 1998·Granted Sep 11, 2001·59 cites·21 claims
- 2190US6254672B1Low defect density self-interstitial dominated siliconMEMC ELECTRONIC MATERIALS·Filed 1998·Granted Jul 3, 2001·64 cites·20 claims
- 2290US6236104B1Silicon on insulator structure from low defect density single crystal siliconMEMC ELECTRONIC MATERIALS·Filed 1999·Granted May 22, 2001·77 cites·40 claims
- 2389US7927185B2Method for assessing workpiece nanotopology using a double side wafer grinderMEMC ELECTRONIC MATERIALS·Filed 2009·Granted Apr 19, 2011·12 cites·11 claims
- 2489US7344594B2Melter assembly and method for charging a crystal forming apparatus with molten source materialMEMC ELECTRONIC MATERIALS·Filed 2005·Granted Mar 18, 2008·7 cites·30 claims
- 2589US6596095B2Epitaxial silicon wafer free from autodoping and backside halo and a method and apparatus for the preparation thereofMEMC ELECTRONIC MATERIALS·Filed 2000·Granted Jul 22, 2003·42 cites·35 claims
- 2689US6454635B1Method and apparatus for a wafer carrier having an insertMEMC ELECTRONIC MATERIALS·Filed 2000·Granted Sep 24, 2002·58 cites·16 claims
- 2789US6006738AMethod and apparatus for cutting an ingotMEMC ELECTRONIC MATERIALS·Filed 1997·Granted Dec 28, 1999·71 cites·13 claims
- 2888US7601049B2Double side wafer grinder and methods for assessing workpiece nanotopologyMEMC ELECTRONIC MATERIALS·Filed 2006·Granted Oct 13, 2009·15 cites·28 claims
- 2988US6846539B2Low defect density silicon having a vacancy-dominated core substantially free of oxidation induced stacking faultsMEMC ELECTRONIC MATERIALS·Filed 2002·Granted Jan 25, 2005·24 cites·30 claims
- 3088US6689209B2Process for preparing low defect density silicon using high growth ratesMEMC ELECTRONIC MATERIALS·Filed 2001·Granted Feb 10, 2004·24 cites·47 claims
- 3188US6652650B2Modified susceptor for use in chemical vapor deposition processMEMC ELECTRONIC MATERIALS·Filed 2002·Granted Nov 25, 2003·35 cites·6 claims
- 3288US6180220B1Ideal Oxygen precipitating silicon wafers and oxygen out-diffusion-less process thereforMEMC ELECTRONIC MATERIALS·Filed 1998·Granted Jan 30, 2001·59 cites·57 claims
- 3388US5779791AProcess for controlling thermal history of Czochralski-grown siliconMEMC ELECTRONIC MATERIALS·Filed 1996·Granted Jul 14, 1998·67 cites·51 claims
- 3488US5422316ASemiconductor wafer polisher and methodMEMC ELECTRONIC MATERIALS·Filed 1994·Granted Jun 6, 1995·72 cites·22 claims
- 3587US6709981B2Method and apparatus for processing a semiconductor wafer using novel final polishing methodMEMC ELECTRONIC MATERIALS·Filed 2001·Granted Mar 23, 2004·52 cites·48 claims
- 3687US6579779B1Process for the preparation of an ideal oxygen precipitating silicon wafer having an asymmetrical vacancy concentration profile capable of forming an enhanced denuded zoneMEMC ELECTRONIC MATERIALS·Filed 2000·Granted Jun 17, 2003·31 cites·14 claims
- 3787US6454851B1Method for preparing molten silicon melt from polycrystalline silicon chargeMEMC ELECTRONIC MATERIALS·Filed 2000·Granted Sep 24, 2002·29 cites·7 claims
- 3887US6093913AElectrical heater for crystal growth apparatus with upper sections producing increased heating power compared to lower sectionsMEMC ELECTRONIC MATERIALS·Filed 1998·Granted Jul 25, 2000·62 cites·11 claims
- 3987US5653799AMethod for controlling growth of a silicon crystalMEMC ELECTRONIC MATERIALS·Filed 1995·Granted Aug 5, 1997·57 cites·15 claims
- 4087US5593494APrecision controlled precipitation of oxygen in siliconMEMC ELECTRONIC MATERIALS·Filed 1995·Granted Jan 14, 1997·87 cites·33 claims
- 4186US7404856B2Nitrogen-doped silicon substantially free of oxidation induced stacking faultsMEMC ELECTRONIC MATERIALS·Filed 2007·Granted Jul 29, 2008·6 cites·18 claims
- 4286US6776840B1Method and apparatus for controlling diameter of a silicon crystal in a locked seed lift growth processMEMC ELECTRONIC MATERIALS·Filed 2000·Granted Aug 17, 2004·27 cites·14 claims
- 4386US5980629AMethods for improving zero dislocation yield of single crystalsMEMC ELECTRONIC MATERIALS·Filed 1995·Granted Nov 9, 1999·67 cites·57 claims
- 4486US5377451AWafer polishing apparatus and methodMEMC ELECTRONIC MATERIALS·Filed 1993·Granted Jan 3, 1995·85 cites·17 claims
- 4586US5178720AMethod for controlling oxygen content of silicon crystals using a combination of cusp magnetic field and crystal and crucible rotation ratesMEMC ELECTRONIC MATERIALS·Filed 1991·Granted Jan 12, 1993·80 cites·20 claims
- 4685US8026145B2Arsenic and phosphorus doped silicon wafer substrates having intrinsic getteringMEMC ELECTRONIC MATERIALS·Filed 2008·Granted Sep 27, 2011·10 cites·18 claims
- 4785US6941940B1Wire saw and process for slicing multiple semiconductor ingotsMEMC ELECTRONIC MATERIALS·Filed 2000·Granted Sep 13, 2005·56 cites·12 claims
- 4885US6376335B1Semiconductor wafer manufacturing processMEMC ELECTRONIC MATERIALS·Filed 2000·Granted Apr 23, 2002·48 cites·23 claims
- 4985US6187089B1Tungsten doped crucible and method for preparing sameMEMC ELECTRONIC MATERIALS·Filed 1999·Granted Feb 13, 2001·56 cites·37 claims
- 5085US5919303AProcess for preparing a silicon melt from a polysilicon chargeMEMC ELECTRONIC MATERIALS·Filed 1997·Granted Jul 6, 1999·50 cites·21 claims
Showing the top 50 of 361 patent records by PatentIndex Score.
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