Inventor · disambiguated record
Krishnaswamy Ramkumar
Also filed as: RAMKUMAR KRISHNASWAMY
174 granted patents·20 pending applications·2,844 citations·filing 1996–2025
99Inventor score
Files withCYPRESS SEMICONDUCTOR CORP106Longitude Flash Memory Solutions Ltd40RAMKUMAR KRISHNASWAMY15Infineon Technologies LLC8POLISHCHUK IGOR6
Top patents by PatentIndex Score
194 records- 0199US10079243B2Method of integrating a charge-trapping gate stack into a CMOS flowCYPRESS SEMICONDUCTOR CORP·Filed 2015·Granted Sep 18, 2018·56 cites·20 claims
- 0298US9502543B1Method of manufacturing for memory transistor with multiple charge storing layers and a high work function gate electrodeCYPRESS SEMICONDUCTOR CORP·Filed 2015·Granted Nov 22, 2016·15 cites·20 claims
- 0398US9218978B1Method of ONO stack formationCYPRESS SEMICONDUCTOR CORP·Filed 2015·Granted Dec 22, 2015·24 cites·20 claims
- 0498US8940645B2Radical oxidation process for fabricating a nonvolatile charge trap memory deviceRAMKUMAR KRISHNASWAMY·Filed 2012·Granted Jan 27, 2015·33 cites·20 claims
- 0598US8883624B1Integration of a memory transistor into high-K, metal gate CMOS process flowCYPRESS SEMICONDUCTOR CORP·Filed 2014·Granted Nov 11, 2014·45 cites·20 claims
- 0698US8318608B2Method of fabricating a nonvolatile charge trap memory deviceRAMKUMAR KRISHNASWAMY·Filed 2008·Granted Nov 27, 2012·46 cites·20 claims
- 0798US8283261B2Radical oxidation process for fabricating a nonvolatile charge trap memory deviceRAMKUMAR KRISHNASWAMY·Filed 2008·Granted Oct 9, 2012·46 cites·6 claims
- 0898US8222688B1SONOS stack with split nitride memory layerJENNE FREDRICK·Filed 2010·Granted Jul 17, 2012·58 cites·24 claims
- 0998US8063434B1Memory transistor with multiple charge storing layers and a high work function gate electrodePOLISHCHUK IGOR·Filed 2008·Granted Nov 22, 2011·93 cites·9 claims
- 1097US9929240B2Memory transistor with multiple charge storing layers and a high work function gate electrodeCYPRESS SEMICONDUCTOR CORP·Filed 2016·Granted Mar 27, 2018·11 cites·18 claims
- 1197US9449831B2Oxide-nitride-oxide stack having multiple oxynitride layersLEVY SAGY·Filed 2012·Granted Sep 20, 2016·22 cites·5 claims
- 1297US9355849B1Oxide-nitride-oxide stack having multiple oxynitride layersCYPRESS SEMICONDUCTOR CORP·Filed 2013·Granted May 31, 2016·19 cites·17 claims
- 1397US9093318B2Memory transistor with multiple charge storing layers and a high work function gate electrodeCYPRESS SEMICONDUCTOR CORP·Filed 2014·Granted Jul 28, 2015·22 cites·10 claims
- 1497US8916432B1Methods to integrate SONOS into CMOS flowCYPRESS SEMICONDUCTOR CORP·Filed 2014·Granted Dec 23, 2014·30 cites·20 claims
- 1597US8633537B2Memory transistor with multiple charge storing layers and a high work function gate electrodePOLISHCHUK IGOR·Filed 2012·Granted Jan 21, 2014·23 cites·19 claims
- 1697US8071453B1Method of ONO integration into MOS flowRAMKUMAR KRISHNASWAMY·Filed 2009·Granted Dec 6, 2011·74 cites·24 claims
- 1797US7390750B1Method of patterning elements within a semiconductor topographyCYPRESS SEMICONDUCTOR CORP·Filed 2005·Granted Jun 24, 2008·59 cites·15 claims
- 1897US6818558B1Method of manufacturing a dielectric layer for a silicon-oxide-nitride-oxide-silicon (SONOS) type devicesCYPRESS SEMICONDUCTOR CORP·Filed 2002·Granted Nov 16, 2004·190 cites·20 claims
- 1996US9406574B1Oxide formation in a plasma processCYPRESS SEMICONDUCTOR CORP·Filed 2014·Granted Aug 2, 2016·12 cites·9 claims
- 2096US9306025B2Memory transistor with multiple charge storing layers and a high work function gate electrodeCYPRESS SEMICONDUCTOR CORP·Filed 2014·Granted Apr 5, 2016·17 cites·20 claims
- 2196US8993457B1Method of fabricating a charge-trapping gate stack using a CMOS process flowCYPRESS SEMICONDUCTOR CORP·Filed 2014·Granted Mar 31, 2015·480 cites·20 claims
- 2296US8993453B1Method of fabricating a nonvolatile charge trap memory deviceRAMKUMAR KRISHNASWAMY·Filed 2012·Granted Mar 31, 2015·17 cites·13 claims
- 2396US8859374B1Memory transistor with multiple charge storing layers and a high work function gate electrodePOLISHCHUK IGOR·Filed 2011·Granted Oct 14, 2014·19 cites·16 claims
- 2496US8796098B1Embedded SONOS based memory cellsCYPRESS SEMICONDUCTOR CORP·Filed 2013·Granted Aug 5, 2014·19 cites·20 claims
- 2596US8710578B2SONOS stack with split nitride memory layerJENNE FREDRICK·Filed 2012·Granted Apr 29, 2014·30 cites·20 claims
- 2696US8679927B2Integration of non-volatile charge trap memory devices and logic CMOS devicesRAMKUMAR KRISHNASWAMY·Filed 2008·Granted Mar 25, 2014·31 cites·16 claims
- 2796US8643124B2Oxide-nitride-oxide stack having multiple oxynitride layersLEVY SAGY·Filed 2011·Granted Feb 4, 2014·27 cites·18 claims
- 2896US8143129B2Integration of non-volatile charge trap memory devices and logic CMOS devicesRAMKUMAR KRISHNASWAMY·Filed 2008·Granted Mar 27, 2012·50 cites·11 claims
- 2995US10593812B2Radical oxidation process for fabricating a nonvolatile charge trap memory deviceLongitude Flash Memory Solutions Ltd·Filed 2018·Granted Mar 17, 2020·7 cites·20 claims
- 3095US10304968B2Radical oxidation process for fabricating a nonvolatile charge trap memory deviceCYPRESS SEMICONDUCTOR CORP·Filed 2015·Granted May 28, 2019·8 cites·14 claims
- 3195US9721962B1Integration of a memory transistor into high-k, metal gate CMOS process flowCYPRESS SEMICONDUCTOR CORP·Filed 2016·Granted Aug 1, 2017·8 cites·19 claims
- 3295US9349824B2Oxide-nitride-oxide stack having multiple oxynitride layersCYPRESS SEMICONDUCTOR CORP·Filed 2014·Granted May 24, 2016·18 cites·7 claims
- 3395US8093128B2Integration of non-volatile charge trap memory devices and logic CMOS devicesKOUTNY JR WILLIAM W C·Filed 2008·Granted Jan 10, 2012·89 cites·14 claims
- 3495US6677213B1SONOS structure including a deuterated oxide-silicon interface and method for making the sameCYPRESS SEMICONDUCTOR CORP·Filed 2002·Granted Jan 13, 2004·85 cites·20 claims
- 3594US11257912B2Sonos stack with split nitride memory layerLongitude Flash Memory Solutions Ltd·Filed 2020·Granted Feb 22, 2022·2 cites·13 claims
- 3694US10199229B2SONOS stack with split nitride memory layerCYPRESS SEMICONDUCTOR CORP·Filed 2017·Granted Feb 5, 2019·5 cites·19 claims
- 3794US8592891B1Methods for fabricating semiconductor memory with process induced strainPOLISHCHUK IGOR·Filed 2012·Granted Nov 26, 2013·19 cites·20 claims
- 3894US7670963B2Single-wafer process for fabricating a nonvolatile charge trap memory deviceCYPRESS SEMICONDUCTOR CORPORTI·Filed 2007·Granted Mar 2, 2010·33 cites·8 claims
- 3994US7396773B1Method for cleaning a gate stackCYPRESS SEMICONDUCTOR COMPANY·Filed 2002·Granted Jul 8, 2008·128 cites·22 claims
- 4093US12250815B1Methods of equalizing gate heights in embedded non-volatile memory on HKMG technologyInfineon Technologies LLC·Filed 2024·Granted Mar 11, 2025·1 cites·20 claims
- 4193US9824895B1Method of integration of ONO stack formation into thick gate oxide CMOS flowCYPRESS SEMICONDUCTOR CORP·Filed 2016·Granted Nov 21, 2017·9 cites·20 claims
- 4293US9793125B2SONOS stack with split nitride memory layerCYPRESS SEMICONDUCTOR CORP·Filed 2015·Granted Oct 17, 2017·5 cites·5 claims
- 4393US7799670B2Plasma oxidation of a memory layer to form a blocking layer in non-volatile charge trap memory devicesCYPRESS SEMICONDUCTOR CORP·Filed 2008·Granted Sep 21, 2010·24 cites·11 claims
- 4492US11017851B1Silicon-oxide-nitride-oxide-silicon based multi level non-volatile memory device and methods of operation thereofCYPRESS SEMICONDUCTOR CORP·Filed 2020·Granted May 25, 2021·5 cites·21 claims
- 4592US10700083B1Method of ONO integration into logic CMOS flowLongitude Flash Memory Solutions Ltd·Filed 2015·Granted Jun 30, 2020·6 cites·11 claims
- 4692US9460974B1Oxide formation in a plasma processCYPRESS SEMICONDUCTOR CORP·Filed 2015·Granted Oct 4, 2016·6 cites·14 claims
- 4791US8871595B2Integration of non-volatile charge trap memory devices and logic CMOS devicesRAMKUMAR KRISHNASWAMY·Filed 2012·Granted Oct 28, 2014·13 cites·20 claims
- 4891US8685813B2Method of integrating a charge-trapping gate stack into a CMOS flowRAMKUMAR KRISHNASWAMY·Filed 2012·Granted Apr 1, 2014·8 cites·18 claims
- 4991US7042054B1SONOS structure including a deuterated oxide-silicon interface and method for making the sameCYPRESS SEMICONDUCTOR CORP·Filed 2003·Granted May 9, 2006·45 cites·13 claims
- 5091US2024332385A1Memory transistor with multiple charge storing layers and a high work function gate electrodeLongitude Flash Memory Solutions Ltd·Filed 2024·Application pending·0 cites
Showing the top 50 of 194 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →