Inventor · disambiguated record
Erik Janzen
Also filed as: JANZEN ERIK · JANZÉN ERIK
20 granted patents·3 pending applications·670 citations·filing 1987–2017
96Inventor score
Top patents by PatentIndex Score
23 records- 0192US5704985ADevice and a method for epitaxially growing objects by CVDABB RESEARCH LTD·Filed 1995·Granted Jan 6, 1998·93 cites·8 claims
- 0287US6039812ADevice for epitaxially growing objects and method for such a growthABB RESEARCH LTD·Filed 1997·Granted Mar 21, 2000·67 cites·17 claims
- 0385US7361222B2Device and method for producing single crystals by vapor depositionNORSTEL AB·Filed 2004·Granted Apr 22, 2008·31 cites·16 claims
- 0485US5851908AMethod for introduction of an impurity dopant in SiC, a semiconductor device formed by the method and a use of highly doped amorphous layer as a source for dopant diffusion into SiCABB RESEARCH LTD·Filed 1995·Granted Dec 22, 1998·71 cites·12 claims
- 0584US5804482AMethod for producing a semiconductor device having a semiconductor layer of SiCABB RESEARCH LTD·Filed 1995·Granted Sep 8, 1998·75 cites·16 claims
- 0681US5654208AMethod for producing a semiconductor device having a semiconductor layer of SiC comprising a masking stepABB RESEARCH LTD·Filed 1995·Granted Aug 5, 1997·62 cites·12 claims
- 0780US5900648ASemiconductor device having an insulated gateABB RESEARCH LTD·Filed 1997·Granted May 4, 1999·46 cites·14 claims
- 0879US6030661ADevice and a method for epitaxially growing objects by CVDABB RESEARCH LTD·Filed 1997·Granted Feb 29, 2000·36 cites·13 claims
- 0978US6048398ADevice for epitaxially growing objectsABB RESEARCH LTD·Filed 1995·Granted Apr 11, 2000·43 cites·14 claims
- 1076US5792257AMethod for protecting the susceptor during epitaxial growth by CVD and a device for epitaxial growth by CVDABB RESEARCH LTD·Filed 1995·Granted Aug 11, 1998·30 cites·18 claims
- 1170US10403746B2Heterostructure and method of its productionSWEGAN AB·Filed 2015·Granted Sep 3, 2019·2 cites·15 claims
- 1269US7018597B2High resistivity silicon carbide single crystalNORSTEL AB·Filed 2002·Granted Mar 28, 2006·19 cites·21 claims
- 1364US5831292AIGBT having a vertical channelABB RESEARCH LTD·Filed 1996·Granted Nov 3, 1998·24 cites·6 claims
- 1461USRE49285ESemiconductor device structure and methods of its productionSWEGAN AB·Filed 2015·Granted Nov 8, 2022·1 cites·16 claims
- 1561US10269565B2Semiconductor device structure and methods of its productionSWEGAN AB·Filed 2015·Granted Apr 23, 2019·1 cites·16 claims
- 1661US6096627AMethod for introduction of an impurity dopant in SiC, a semiconductor device formed by the method and a use of a highly doped amorphous layer as a source for dopant diffusion into SiCABB RESEARCH LTD·Filed 1998·Granted Aug 1, 2000·21 cites·17 claims
- 1754US5847414ASemiconductor device having a hetero-junction between SiC and a Group 3B-nitrideABB RESEARCH LTD·Filed 1997·Granted Dec 8, 1998·16 cites·15 claims
- 1853US5650638ASemiconductor device having a passivation layerABB RESEARCH LTD·Filed 1995·Granted Jul 22, 1997·19 cites·20 claims
- 1951US2016133461A1Method to grow a semi-conducting sic layerJANZÉN ERIK·Filed 2014·Application pending·0 cites
- 2048US10017877B2Silicon carbide crystal growth in a CVD reactor using chlorinated chemistryEPILUVAC AB·Filed 2013·Granted Jul 10, 2018·0 cites·13 claims
- 2148US2018053649A1Method to grow a semi-conducting sic layerSWEGAN AB·Filed 2017·Application pending·0 cites
- 2247US4893354ASystem and method for self-compensating fiber-optic data transmission at temperatures up to 200 degrees C.ASEA ATOM AB·Filed 1987·Granted Jan 9, 1990·13 cites·9 claims
- 2343US2008149020A1Device and method to producing single crystals by vapour depositionNORSTEL AB·Filed 2008·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Erik Janzen files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →