Inventor · disambiguated record
Carsten Peters
Also filed as: PETERS CARSTEN · PETERS CARSTEN K
37 granted patents·8 pending applications·542 citations·filing 2006–2023
97Inventor score
Top patents by PatentIndex Score
45 records- 0197US10483154B1Front-end-of-line device structure and method of forming such a front-end-of-line device structureGLOBALFOUNDRIES INC·Filed 2018·Granted Nov 19, 2019·399 cites·19 claims
- 0296US10157774B1Contact scheme for landing on different contact area levelsGLOBALFOUNDRIES INC·Filed 2017·Granted Dec 18, 2018·17 cites·20 claims
- 0390US7928004B2Nano imprint technique with increased flexibility with respect to alignment and feature shapingADVANCED MICRO DEVICES INC·Filed 2007·Granted Apr 19, 2011·16 cites·6 claims
- 0489US7902581B2Semiconductor device comprising a contact structure based on copper and tungstenGLOBALFOUNDRIES INC·Filed 2006·Granted Mar 8, 2011·18 cites·37 claims
- 0588US11123855B2Control method and borehole flushing moduleHILTI AG·Filed 2017·Granted Sep 21, 2021·4 cites·13 claims
- 0686US10252321B2Twist drill and production methodHILTI AG·Filed 2015·Granted Apr 9, 2019·4 cites·15 claims
- 0785US7764078B2Test structure for monitoring leakage currents in a metallization layerGLOBALFOUNDRIES INC·Filed 2007·Granted Jul 27, 2010·10 cites·17 claims
- 0883US8293641B2Nano imprint technique with increased flexibility with respect to alignment and feature shapingSEIDEL ROBERT·Filed 2011·Granted Oct 23, 2012·6 cites·6 claims
- 0983US7678690B2Semiconductor device comprising a contact structure with increased etch selectivityADVANCED MICRO DEVICES INC·Filed 2006·Granted Mar 16, 2010·12 cites·12 claims
- 1078US7416973B2Method of increasing the etch selectivity in a contact structure of semiconductor devicesADVANCED MICRO DEVICES INC·Filed 2006·Granted Aug 26, 2008·8 cites·10 claims
- 1176US7592258B2Metallization layer of a semiconductor device having differently thick metal lines and a method of forming the sameADVANCED MICRO DEVICES INC·Filed 2007·Granted Sep 22, 2009·7 cites·16 claims
- 1275US11031406B2Semiconductor devices having silicon/germanium active regions with different germanium concentrationsGLOBALFOUNDRIES US INC·Filed 2019·Granted Jun 8, 2021·1 cites·20 claims
- 1374US7879709B2Semiconductor structure comprising an electrically conductive feature and method of forming a semiconductor structureGLOBALFOUNDRIES INC·Filed 2008·Granted Feb 1, 2011·6 cites·18 claims
- 1474US7482219B2Technique for creating different mechanical strain by a contact etch stop layer stack with an intermediate etch stop layerADVANCED MICRO DEVICES INC·Filed 2006·Granted Jan 27, 2009·6 cites·21 claims
- 1572US9305878B2Integrated circuits and methods for fabricating integrated circuits with capping layers between metal contacts and interconnectsGLOBALFOUNDRIES INC·Filed 2014·Granted Apr 5, 2016·2 cites·19 claims
- 1672US7915170B2Reducing contamination of semiconductor substrates during beol processing by providing a protection layer at the substrate edgeADVANCED MICRO DEVICES INC·Filed 2007·Granted Mar 29, 2011·5 cites·17 claims
- 1771US8173538B2Method of selectively forming a conductive barrier layer by ALDFEUSTEL FRANK·Filed 2007·Granted May 8, 2012·6 cites·11 claims
- 1870US8932911B2Integrated circuits and methods for fabricating integrated circuits with capping layers between metal contacts and interconnectsGLOBALFOUNDRIES INC·Filed 2013·Granted Jan 13, 2015·2 cites·19 claims
- 1969US11850716B2Drill for chiselling rockHILTI AG·Filed 2018·Granted Dec 26, 2023·1 cites·12 claims
- 2068US7875514B2Technique for compensating for a difference in deposition behavior in an interlayer dielectric materialADVANCED MICRO DEVICES INC·Filed 2010·Granted Jan 25, 2011·2 cites·13 claims
- 2166US11213939B2ChiselHILTI AG·Filed 2017·Granted Jan 4, 2022·2 cites·16 claims
- 2266US9257329B2Methods for fabricating integrated circuits including densifying interlevel dielectric layersGLOBALFOUNDRIES INC·Filed 2014·Granted Feb 9, 2016·2 cites·19 claims
- 2366US7638424B2Technique for non-destructive metal delamination monitoring in semiconductor devicesGLOBALFOUNDRIES INC·Filed 2006·Granted Dec 29, 2009·3 cites·19 claims
- 2462US7767593B2Semiconductor device including field effect transistors laterally enclosed by interlayer dielectric material having increased intrinsic stressADVANCED MICRO DEVICES INC·Filed 2008·Granted Aug 3, 2010·1 cites·22 claims
- 2561US12479077B2Portable power toolHILTI AG·Filed 2019·Granted Nov 25, 2025·0 cites·13 claims
- 2661US11577429B2Manufacturing process, tool stand, and drill bitHILTI AG·Filed 2021·Granted Feb 14, 2023·0 cites·7 claims
- 2761US7608501B2Technique for creating different mechanical strain by forming a contact etch stop layer stack having differently modified intrinsic stressADVANCED MICRO DEVICES INC·Filed 2006·Granted Oct 27, 2009·2 cites·13 claims
- 2854US10940527B2Manufacturing process, tool stand, and drill bitHILTI AG·Filed 2016·Granted Mar 9, 2021·0 cites·2 claims
- 2954US10522555B2Semiconductor devices including Si/Ge active regions with different Ge concentrationsGLOBALFOUNDRIES INC·Filed 2018·Granted Dec 31, 2019·0 cites·18 claims
- 3052US7785956B2Technique for compensating for a difference in deposition behavior in an interlayer dielectric materialADVANCED MICRO DEVICES INC·Filed 2008·Granted Aug 31, 2010·0 cites·17 claims
- 3151US10245657B2Twist drill and production methodHILTI AG·Filed 2014·Granted Apr 2, 2019·0 cites·7 claims
- 3250US2025282081A1Method for manufacturing a drill segment, drill segment, and drill bitHILTI AG·Filed 2023·Application pending·0 cites
- 3349US10906166B2Control method and portable power toolHILTI AG·Filed 2016·Granted Feb 2, 2021·0 cites·7 claims
- 3449US7906815B2Increased reliability for a contact structure to connect an active region with a polysilicon lineADVANCED MICRO DEVICES INC·Filed 2008·Granted Mar 15, 2011·0 cites·14 claims
- 3548US7910496B2Technique for forming an interlayer dielectric material of increased reliability above a structure including closely spaced linesADVANCED MICRO DEVICES INC·Filed 2008·Granted Mar 22, 2011·0 cites·23 claims
- 3646US2009108462A1Dual integration scheme for low resistance metal layersPETERS CARSTEN·Filed 2008·Application pending·0 cites
- 3745US2008131257A1System and method for reducing collateral transport-induced damage during microstructure processingPETERS CARSTEN·Filed 2007·Application pending·0 cites
- 3845US2008265419A1Semiconductor structure comprising an electrically conductive feature and method of forming the sameFROHBERG KAI·Filed 2007·Application pending·0 cites
- 3943US7998823B2Method for reducing leakage currents caused by misalignment of a contact structure by increasing an error tolerance of the contact patterning processADVANCED MICRO DEVICES INC·Filed 2006·Granted Aug 16, 2011·0 cites·26 claims
- 4042US8580684B2Contact elements of semiconductor devices comprising a continuous transition to metal lines of a metallization layerSEIDEL ROBERT·Filed 2010·Granted Nov 12, 2013·0 cites·17 claims
- 4140US2024316822A1Masonry drilling tool, masonry drilling device, and method for drilling reinforced masonryHILTI AG·Filed 2022·Application pending·0 cites
- 4237US2018171721A1Drill Bit and Production MethodHILTI AG·Filed 2016·Application pending·0 cites
- 4336US2014349479A1Method including a removal of a hardmask from a semiconductor structure and rinsing the semiconductor structure with an alkaline rinse solutionGLOBALFOUNDRIES INC·Filed 2013·Application pending·0 cites
- 4435US2014328641A1Drill and production method for a drillPETERS CARSTEN·Filed 2012·Application pending·0 cites
- 4526US8772154B2Integrated circuits including barrier polish stop layers and methods for the manufacture thereofPFÜTZNER EGON RONNY·Filed 2011·Granted Jul 8, 2014·0 cites·15 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →