Inventor · disambiguated record
Laurent Favennec
Also filed as: FAVENNEC LAURENT
13 granted patents·4 pending applications·27 citations·filing 2007–2024
87Inventor score
Files withST MICROELECTRONICS CROLLES 2 SAS6ST MICROELECTRONICS CROLLES 23ST MICROELECTRONICS SA3ST MICROELECTRONICS INT NV2BIDAL GRÉGORY1
Top patents by PatentIndex Score
17 records- 0191US9711550B2Pinned photodiode with a low dark currentST MICROELECTRONICS SA·Filed 2015·Granted Jul 18, 2017·9 cites·18 claims
- 0288US11653582B2Chip containing an onboard non-volatile memory comprising a phase-change materialST MICROELECTRONICS CROLLES 2 SAS·Filed 2018·Granted May 16, 2023·4 cites·19 claims
- 0386US7923820B2Method of producing a porous dielectric element and corresponding dielectric elementST MICROELECTRONICS SA·Filed 2010·Granted Apr 12, 2011·7 cites·17 claims
- 0476US8765575B2Shallow trench forming methodST MICROELECTRONICS INT NV·Filed 2013·Granted Jul 1, 2014·4 cites·8 claims
- 0569US12232435B2Chip containing an onboard non-volatile memory comprising a phase-change materialST MICROELECTRONICS CROLLES 2 SAS·Filed 2023·Granted Feb 18, 2025·0 cites·17 claims
- 0664US12295272B2Phase change memoryST MICROELECTRONICS CROLLES 2 SAS·Filed 2022·Granted May 6, 2025·0 cites·19 claims
- 0763US2025218469A1Electronic deviceST MICROELECTRONICS INT NV·Filed 2024·Application pending·0 cites
- 0862US9087872B2Method for forming an insulating trench in a semiconductor substrate and structure, especially CMOS image sensor, obtained by said methodST MICROELECTRONICS CROLLES 2·Filed 2014·Granted Jul 21, 2015·1 cites·8 claims
- 0960US8796148B2Method for producing a deep trench in a microelectronic component substrateLEVERD FRANÇOIS·Filed 2012·Granted Aug 5, 2014·2 cites·15 claims
- 1054US7732348B2Method of producing a porous dielectric element and corresponding dielectric elementST MICROELECTRONICS SA·Filed 2007·Granted Jun 8, 2010·0 cites·13 claims
- 1150US12336440B2Phase change memoryST MICROELECTRONICS CROLLES 2 SAS·Filed 2022·Granted Jun 17, 2025·0 cites·44 claims
- 1250US9117876B2Integrated circuit comprising an isolating trench and corresponding methodST MICROELECTRONICS CROLLES 2·Filed 2014·Granted Aug 25, 2015·0 cites·5 claims
- 1345US10522593B2Phase-change memory cellST MICROELECTRONICS CROLLES 2 SAS·Filed 2018·Granted Dec 31, 2019·0 cites·10 claims
- 1441US8829622B2Integrated circuit comprising an isolating trench and corresponding methodBIDAL GRÉGORY·Filed 2012·Granted Sep 9, 2014·0 cites·6 claims
- 1540US2018090542A1Phase-change memory cellST MICROELECTRONICS CROLLES 2 SAS·Filed 2017·Application pending·0 cites
- 1640US2013026546A1Integrated circuit comprising an isolating trench and corresponding methodST MICROELECTRONICS CROLLES 2·Filed 2012·Application pending·0 cites
- 1730US2013056845A1Method for forming an isolation trenchFAVENNEC LAURENT·Filed 2012·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →