Inventor · disambiguated record
Andrew Lam
Also filed as: LAM ANDREW · LAM ANDREW C · LAM ANDREW M
9 granted patents·2 pending applications·407 citations·filing 2003–2009
88Inventor score
Top patents by PatentIndex Score
11 records- 0198US7494545B2Epitaxial deposition process and apparatusAPPLIED MATERIALS INC·Filed 2006·Granted Feb 24, 2009·246 cites·10 claims
- 0297US7897495B2Formation of epitaxial layer containing silicon and carbonAPPLIED MATERIALS INC·Filed 2006·Granted Mar 1, 2011·126 cites·19 claims
- 0385US7588980B2Methods of controlling morphology during epitaxial layer formationAPPLIED MATERIALS INC·Filed 2007·Granted Sep 15, 2009·10 cites·21 claims
- 0476US7772074B2Method of forming conformal silicon layer for recessed source-drainAPPLIED MATERIALS INC·Filed 2007·Granted Aug 10, 2010·5 cites·20 claims
- 0572US7718225B2Method to control semiconductor film deposition characteristicsAPPLIED MATERIALS INC·Filed 2005·Granted May 18, 2010·3 cites·18 claims
- 0670US7776698B2Selective formation of silicon carbon epitaxial layerAPPLIED MATERIALS INC·Filed 2007·Granted Aug 17, 2010·3 cites·19 claims
- 0765US7488690B2Silicon nitride film with stress controlAPPLIED MATERIALS INC·Filed 2004·Granted Feb 10, 2009·11 cites·30 claims
- 0863US9064960B2Selective epitaxy process controlLAM ANDREW·Filed 2007·Granted Jun 23, 2015·3 cites·17 claims
- 0949US8991332B2Apparatus to control semiconductor film deposition characteristicsKUPPURAO SATHEESH·Filed 2009·Granted Mar 31, 2015·0 cites·16 claims
- 1049US2004033263A1Reduced formate poly(alkylene oxides) with secondary amines for reducing impurity formationFiled 2003·Application pending·0 cites
- 1143US2008138955A1Formation of epitaxial layer containing siliconYE ZHIYUAN·Filed 2006·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →