Inventor · disambiguated record
Roderick C. Mosely
Also filed as: MOSELY RODERICK · MOSELY RODERICK C · MOSELY RODERICK CRAIG · SOLLAZZI BRYCE
51 granted patents·13 pending applications·4,546 citations·filing 1986–2021
99Inventor score
Files withAPPLIED MATERIALS INC47JENNINGS TECHNOLOGY3DING PEIJUN2LAM RES CORP2MACHINE TECHNOLOGY INC2
Top patents by PatentIndex Score
64 records- 0198US7049226B2Integration of ALD tantalum nitride for copper metallizationAPPLIED MATERIALS INC·Filed 2004·Granted May 23, 2006·514 cites·55 claims
- 0298US6607976B2Copper interconnect barrier layer structure and formation methodAPPLIED MATERIALS INC·Filed 2001·Granted Aug 19, 2003·289 cites·14 claims
- 0396US7604708B2Cleaning of native oxide with hydrogen-containing radicalsAPPLIED MATERIALS INC·Filed 2004·Granted Oct 20, 2009·226 cites·16 claims
- 0496US6436819B1Nitrogen treatment of a metal nitride/metal stackAPPLIED MATERIALS INC·Filed 2000·Granted Aug 20, 2002·576 cites·25 claims
- 0596US6107192AReactive preclean prior to metallization for sub-quarter micron applicationAPPLIED MATERIALS INC·Filed 1997·Granted Aug 22, 2000·212 cites·20 claims
- 0696US6071572AForming tin thin films using remote activated specie generationAPPLIED MATERIALS INC·Filed 1996·Granted Jun 6, 2000·467 cites·29 claims
- 0795US5431799ACollimation hardware with RF bias rings to enhance sputter and/or substrate cavity ion generation efficiencyAPPLIED MATERIALS INC·Filed 1993·Granted Jul 11, 1995·105 cites·23 claims
- 0895US4756810ADeposition and planarizing methods and apparatusMACHINE TECHNOLOGY INC·Filed 1986·Granted Jul 12, 1988·152 cites·32 claims
- 0994US5989623ADual damascene metallizationAPPLIED MATERIALS INC·Filed 1997·Granted Nov 23, 1999·146 cites·26 claims
- 1093US7048837B2End point detection for sputtering and resputteringAPPLIED MATERIALS INC·Filed 2003·Granted May 23, 2006·68 cites·26 claims
- 1193US4717461ASystem and method for processing workpiecesMACHINE TECHNOLOGY INC·Filed 1986·Granted Jan 5, 1988·396 cites·14 claims
- 1292US8668816B2Self-ionized and inductively-coupled plasma for sputtering and resputteringDING PEIJUN·Filed 2007·Granted Mar 11, 2014·19 cites·16 claims
- 1392US8324095B2Integration of ALD tantalum nitride for copper metallizationCHUNG HUA·Filed 2009·Granted Dec 4, 2012·18 cites·15 claims
- 1492US6207222B1Dual damascene metallizationAPPLIED MATERIALS INC·Filed 1999·Granted Mar 27, 2001·120 cites·6 claims
- 1591US6905965B2Reactive preclean prior to metallization for sub-quarter micron applicationAPPLIED MATERIALS INC·Filed 2004·Granted Jun 14, 2005·47 cites·20 claims
- 1691US6139697ALow temperature integrated via and trench fill process and apparatusAPPLIED MATERIALS INC·Filed 1997·Granted Oct 31, 2000·117 cites·18 claims
- 1790US6458684B1Single step process for blanket-selective CVD aluminum depositionAPPLIED MATERIALS INC·Filed 2000·Granted Oct 1, 2002·42 cites·20 claims
- 1889US6001420ASemi-selective chemical vapor depositionAPPLIED MATERIALS INC·Filed 1996·Granted Dec 14, 1999·92 cites·25 claims
- 1988US6693030B1Reactive preclean prior to metallization for sub-quarter micron applicationAPPLIED MATERIALS INC·Filed 2000·Granted Feb 17, 2004·34 cites·59 claims
- 2088US6500742B1Construction of a film on a semiconductor waferAPPLIED MATERIALS INC·Filed 2000·Granted Dec 31, 2002·36 cites·33 claims
- 2188US5989999AConstruction of a tantalum nitride film on a semiconductor waferAPPLIED MATERIALS INC·Filed 1997·Granted Nov 23, 1999·100 cites·41 claims
- 2287US5877087ALow temperature integrated metallization process and apparatusAPPLIED MATERIALS INC·Filed 1995·Granted Mar 2, 1999·69 cites·11 claims
- 2386US10047430B2Self-ionized and inductively-coupled plasma for sputtering and resputteringAPPLIED MATERIALS INC·Filed 2014·Granted Aug 14, 2018·5 cites·22 claims
- 2483US6372633B1Method and apparatus for forming metal interconnectsAPPLIED MATERIALS INC·Filed 1998·Granted Apr 16, 2002·58 cites·10 claims
- 2581US6169030B1Metallization process and methodAPPLIED MATERIALS INC·Filed 1998·Granted Jan 2, 2001·57 cites·25 claims
- 2681US6066358ABlanket-selective chemical vapor deposition using an ultra-thin nucleation layerAPPLIED MATERIALS INC·Filed 1996·Granted May 23, 2000·62 cites·16 claims
- 2780US6120844ADeposition film orientation and reflectivity improvement using a self-aligning ultra-thin layerAPPLIED MATERIALS INC·Filed 1996·Granted Sep 19, 2000·57 cites·18 claims
- 2878US5108569AProcess and apparatus for forming stoichiometric layer of a metal compound by closed loop voltage controlled reactive sputteringAPPLIED MATERIALS INC·Filed 1991·Granted Apr 28, 1992·71 cites·32 claims
- 2977US8696875B2Self-ionized and inductively-coupled plasma for sputtering and resputteringDING PEIJUN·Filed 2002·Granted Apr 15, 2014·15 cites·61 claims
- 3077US6017144AMethod and apparatus for depositing highly oriented and reflective crystalline layers using a low temperature seeding layerAPPLIED MATERIALS INC·Filed 1996·Granted Jan 25, 2000·50 cites·32 claims
- 3176US6297147B1Plasma treatment for ex-situ contact fillAPPLIED MATERIALS INC·Filed 1998·Granted Oct 2, 2001·50 cites·25 claims
- 3272US7497122B2Method and apparatus for the detection of high pressure conditions in a vacuum-type electrical deviceTHOMAS AND BETTS INTERNATIONAL·Filed 2007·Granted Mar 3, 2009·7 cites·20 claims
- 3372US6080665AIntegrated nitrogen-treated titanium layer to prevent interaction of titanium and aluminumAPPLIED MATERIALS INC·Filed 1997·Granted Jun 27, 2000·39 cites·28 claims
- 3472US5943600ATreatment of a titanium nitride layer to improve resistance to elevated temperaturesAPPLIED MATERIALS INC·Filed 1997·Granted Aug 24, 1999·40 cites·10 claims
- 3571US6444036B2Construction of a film on a semiconductor waferAPPLIED MATERIALS INC·Filed 2000·Granted Sep 3, 2002·13 cites·11 claims
- 3670US7802480B2Method and apparatus for the detection of high pressure conditions in a vacuum-type electrical deviceTHOMAS AND BETTS INTERNATIONAL·Filed 2009·Granted Sep 28, 2010·6 cites·15 claims
- 3767US6933021B2Method of TiSiN deposition using a chemical vapor deposition (CVD) processAPPLIED MATERIALS INC·Filed 2002·Granted Aug 23, 2005·11 cites·40 claims
- 3864US7383733B2Method and apparatus for the sonic detection of high pressure conditions in a vacuum switching deviceJENNINGS TECHNOLOGY·Filed 2005·Granted Jun 10, 2008·5 cites·37 claims
- 3964US7313964B2Method and apparatus for the detection of high pressure conditions in a vacuum-type electrical deviceJENNINGS TECHNOLOGY·Filed 2006·Granted Jan 1, 2008·4 cites·19 claims
- 4063US5804046AThin-film forming apparatusJAPAN ENERGY CORP·Filed 1994·Granted Sep 8, 1998·41 cites·4 claims
- 4162US7302854B2Method and apparatus for the detection of high pressure conditions in a vacuum-type electrical deviceJENNINGS TECHNOLOGY·Filed 2005·Granted Dec 4, 2007·4 cites·22 claims
- 4262US6509274B1Method for forming aluminum lines over aluminum-filled vias in a semiconductor substrateAPPLIED MATERIALS INC·Filed 2000·Granted Jan 21, 2003·11 cites·12 claims
- 4360US6139905AIntegrated CVD/PVD Al planarization using ultra-thin nucleation layersAPPLIED MATERIALS INC·Filed 1997·Granted Oct 31, 2000·24 cites·19 claims
- 4457US6430458B1Semi-selective chemical vapor depositionAPPLIED MATERIALS INC·Filed 1999·Granted Aug 6, 2002·18 cites·20 claims
- 4557US2009233438A1Self-ionized and inductively-coupled plasma for sputtering and resputteringAPPLIED MATERIALS INC·Filed 2008·Application pending·0 cites
- 4655US6251758B1Construction of a film on a semiconductor waferAPPLIED MATERIALS INC·Filed 1997·Granted Jun 26, 2001·11 cites·40 claims
- 4753US2022413276A1Reflective fourier ptychography imaging of large surfacesLAM RES CORP·Filed 2020·Application pending·0 cites
- 4853US2018327893A1Self-ionized and inductively-coupled plasma for sputtering and resputteringAPPLIED MATERIALS INC·Filed 2018·Application pending·0 cites
- 4952US6743714B2Low temperature integrated metallization process and apparatusAPPLIED MATERIALS INC·Filed 2002·Granted Jun 1, 2004·2 cites·8 claims
- 5052US6355560B1Low temperature integrated metallization process and apparatusAPPLIED MATERIALS INC·Filed 1998·Granted Mar 12, 2002·12 cites·16 claims
Showing the top 50 of 64 patent records by PatentIndex Score.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →