Inventor · disambiguated record
Tamotsu Ogata
Also filed as: OGATA TAMOTSU
24 granted patents·6 pending applications·101 citations·filing 1998–2020
94Inventor score
Top patents by PatentIndex Score
30 records- 0190US9825050B2Semiconductor device and manufacturing method thereofRENESAS ELECTRONICS CORP·Filed 2016·Granted Nov 21, 2017·5 cites·10 claims
- 0282US6599795B2Method of manufacturing semiconductor device including a step of forming a silicide layer, and semiconductor device manufactured therebyMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Jul 29, 2003·35 cites·7 claims
- 0380US9831318B2Semiconductor device and a manufacturing method thereofRENESAS ELECTRONICS CORP·Filed 2015·Granted Nov 28, 2017·3 cites·7 claims
- 0478US10249638B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2018·Granted Apr 2, 2019·2 cites·20 claims
- 0571US10153293B2Semiconductor device and method of manufacturing semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2017·Granted Dec 11, 2018·1 cites·8 claims
- 0670US10991709B2Semiconductor device and manufacturing method thereofRENESAS ELECTRONICS CORP·Filed 2020·Granted Apr 27, 2021·0 cites·11 claims
- 0770US10090399B2Semiconductor device and a manufacturing method thereofRENESAS ELECTRONICS CORP·Filed 2017·Granted Oct 2, 2018·1 cites·5 claims
- 0870US8779593B2Semiconductor integrated circuit deviceOGATA TAMOTSU·Filed 2012·Granted Jul 15, 2014·4 cites·14 claims
- 0968US10446569B2Semiconductor device and manufacturing method thereofRENESAS ELECTRONICS CORP·Filed 2017·Granted Oct 15, 2019·1 cites·13 claims
- 1068US10204789B2Manufacturing method of semiconductor device and semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2017·Granted Feb 12, 2019·1 cites·17 claims
- 1164US10593687B2Semiconductor device and manufacturing method thereofRENESAS ELECTRONICS CORP·Filed 2019·Granted Mar 17, 2020·0 cites·10 claims
- 1260US10438961B2Semiconductor device and manufacturing method thereofRENESAS ELECTRONICS CORP·Filed 2017·Granted Oct 8, 2019·0 cites·5 claims
- 1360US6215146B1Semiconductor device and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Apr 10, 2001·18 cites·4 claims
- 1458US10522558B2Semiconductor device and method of manufacturing semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2018·Granted Dec 31, 2019·0 cites·12 claims
- 1558US6159785ASemiconductor device and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Dec 12, 2000·22 cites·11 claims
- 1658US2020098775A1Semiconductor device and method of manufacturing semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2019·Application pending·0 cites
- 1757US10559581B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2019·Granted Feb 11, 2020·0 cites·9 claims
- 1857US9171928B2Manufacturing method of semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2013·Granted Oct 27, 2015·1 cites·14 claims
- 1951US10192879B2Semiconductor device and manufacturing method thereofRENESAS ELECTRONICS CORP·Filed 2017·Granted Jan 29, 2019·0 cites·29 claims
- 2049US9595532B2Semiconductor device and manufacturing method thereofRENESAS ELECTRONICS CORP·Filed 2016·Granted Mar 14, 2017·0 cites·20 claims
- 2148US6593179B2Method of manufacturing a semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Jul 15, 2003·2 cites·5 claims
- 2243US10424591B2Semiconductor device and manufacturing method thereofRENESAS ELECTRONICS CORP·Filed 2018·Granted Sep 24, 2019·0 cites·12 claims
- 2341US2019273057A1Semiconductor device and manufacturing method of the sameRENESAS ELECTRONICS CORP·Filed 2019·Application pending·0 cites
- 2436US6323098B1Manufacturing method of a semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Nov 27, 2001·5 cites·4 claims
- 2535US2002153544A1Semiconductor device and its manufacturing methodMITSUBISHI ELECTRIC CORP·Filed 2001·Application pending·0 cites
- 2634US2004178516A1Semiconductor deviceRENESAS TECH CORP·Filed 2003·Application pending·0 cites
- 2734US2003199140A1Method of manufacturing semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2002·Application pending·0 cites
- 2833US9768187B2Method of manufacturing split-gate non-volatile memory with hi-voltage and low-voltage peripheral circuitryRENESAS ELECTRONICS CORP·Filed 2016·Granted Sep 19, 2017·0 cites·10 claims
- 2930US6207527B1Method of manufacturing semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Mar 27, 2001·0 cites·5 claims
- 3028US2002100943A1Method of manufacturing semiconductor device, and semiconductor device manufactured therebyMITSUBISHI ELECTRIC CORP·Filed 2001·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Tamotsu Ogata files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →