Inventor · disambiguated record
Ting-An Chien
Also filed as: CHIEN TING · CHIEN TING-AN
32 granted patents·9 pending applications·103 citations·filing 2000–2025
95Inventor score
Files withUNITED MICROELECTRONICS CORP29HTC CORP5DARFON ELECTRONICS CORP3CHAN YUEH-LIN1LAM RES CORP1
Top patents by PatentIndex Score
41 records- 0196US11818960B2Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2021·Granted Nov 14, 2023·2 cites·9 claims
- 0295US12089512B2Semiconductor structureUNITED MICROELECTRONICS CORP·Filed 2023·Granted Sep 10, 2024·1 cites·8 claims
- 0392US11793091B2Semiconductor structure and manufacturing method thereofUNITED MICROELECTRONICS CORP·Filed 2020·Granted Oct 17, 2023·2 cites·11 claims
- 0492US9734787B2Method for operating mobile electronic device, mobile electronic device, and computer readable medium using the sameHTC CORP·Filed 2014·Granted Aug 15, 2017·10 cites·16 claims
- 0592US9685986B2Device cover for accessory attachmentHTC CORP·Filed 2016·Granted Jun 20, 2017·11 cites·22 claims
- 0692US6426304B1Post etch photoresist strip with hydrogen for organosilicate glass low-κ etch applicationsLAM RES CORP·Filed 2000·Granted Jul 30, 2002·69 cites·17 claims
- 0786US12108681B2Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2023·Granted Oct 1, 2024·0 cites·9 claims
- 0885US2024423094A1Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2024·Application pending·0 cites
- 0983US11688802B2High electron mobility transistor and fabrication method thereofUNITED MICROELECTRONICS CORP·Filed 2021·Granted Jun 27, 2023·1 cites·13 claims
- 1082US2025331216A1Semiconductor structure and the forming method thereofUNITED MICROELECTRONICS CORP·Filed 2025·Application pending·0 cites
- 1181US2025324646A1Method for forming semiconductor structureUNITED MICROELECTRONICS CORP·Filed 2025·Application pending·0 cites
- 1278US11114612B2Magnetoresistive random access memory and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2019·Granted Sep 7, 2021·1 cites·20 claims
- 1377US11101324B2Memory cell and forming method thereofUNITED MICROELECTRONICS CORP·Filed 2019·Granted Aug 24, 2021·1 cites·9 claims
- 1475US11037833B2Fabrication method of semiconductor device with spacer trimming processUNITED MICROELECTRONICS CORP·Filed 2019·Granted Jun 15, 2021·2 cites·8 claims
- 1574US12376323B2Semiconductor structure and the forming method thereofUNITED MICROELECTRONICS CORP·Filed 2022·Granted Jul 29, 2025·0 cites·9 claims
- 1671US11723287B2Method of manufacturing magnetic tunnel junction (MTJ) deviceUNITED MICROELECTRONICS CORP·Filed 2022·Granted Aug 8, 2023·0 cites·19 claims
- 1770US11849649B2Method for fabricating memory cell of magnetoresistive random access memoryUNITED MICROELECTRONICS CORP·Filed 2022·Granted Dec 19, 2023·0 cites·6 claims
- 1870US2023238455A1Method for fabricating high electron mobility transistorUNITED MICROELECTRONICS CORP·Filed 2023·Application pending·0 cites
- 1970US2023282740A1High electron mobility transistor and fabrication method thereofUNITED MICROELECTRONICS CORP·Filed 2023·Application pending·0 cites
- 2069US12015076B2HEMT and method of fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2023·Granted Jun 18, 2024·0 cites·8 claims
- 2169US11762293B2Fabricating method of reducing photoresist footingUNITED MICROELECTRONICS CORP·Filed 2021·Granted Sep 19, 2023·0 cites·11 claims
- 2269US10148306B2Device cover for accessory attachmentHTC CORP·Filed 2017·Granted Dec 4, 2018·1 cites·21 claims
- 2368US11632889B2Method of forming memory cellUNITED MICROELECTRONICS CORP·Filed 2021·Granted Apr 18, 2023·0 cites·6 claims
- 2466US11258005B2Magnetoresistive random access memory device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2019·Granted Feb 22, 2022·0 cites·13 claims
- 2564US11495737B2Magnetic tunnel junction (MTJ) deviceUNITED MICROELECTRONICS CORP·Filed 2020·Granted Nov 8, 2022·0 cites·14 claims
- 2664US11121312B2Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2019·Granted Sep 14, 2021·0 cites·16 claims
- 2762US11688790B2HEMT and method of fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2021·Granted Jun 27, 2023·0 cites·12 claims
- 2859US2021273089A1Semiconductor device and fabrication method thereofUNITED MICROELECTRONICS CORP·Filed 2021·Application pending·0 cites
- 2958US10523256B2Device cover for accessory attachmentHTC CORP·Filed 2018·Granted Dec 31, 2019·0 cites·23 claims
- 3058US8411412B2Ceramic powder composition, ceramic material, and multilayer ceramic capacitor fabricated therebyCHAN YUEH-LIN·Filed 2011·Granted Apr 2, 2013·2 cites·13 claims
- 3157US10523257B2Device cover for accessory attachmentHTC CORP·Filed 2018·Granted Dec 31, 2019·0 cites·17 claims
- 3257US2025156043A1Method for controlling auto-tuning process with aid of interactive graphical user interface, and associated apparatusMEDIATEK INC·Filed 2024·Application pending·0 cites
- 3356US11462441B2Method for fabricating semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2021·Granted Oct 4, 2022·0 cites·10 claims
- 3454US11043596B2Semiconductor device and fabrication method thereofUNITED MICROELECTRONICS CORP·Filed 2019·Granted Jun 22, 2021·0 cites·9 claims
- 3552US11189793B2Method of forming resistive random access memory cellUNITED MICROELECTRONICS CORP·Filed 2019·Granted Nov 30, 2021·0 cites·18 claims
- 3646US10892348B2Method of rounding fin-shaped structureUNITED MICROELECTRONICS CORP·Filed 2019·Granted Jan 12, 2021·0 cites·13 claims
- 3744US7560406B2Ceramic material and laminated ceramic condenser comprised thereofDARFON ELECTRONICS CORP·Filed 2007·Granted Jul 14, 2009·0 cites·13 claims
- 3842US7435697B2Ceramic powder composition, ceramic material, and laminated ceramic condenser comprised thereofDARFON ELECTRONICS CORP·Filed 2005·Granted Oct 14, 2008·0 cites·1 claims
- 3939US11114331B2Method for fabricating shallow trench isolationUNITED MICROELECTRONICS CORP·Filed 2019·Granted Sep 7, 2021·0 cites·7 claims
- 4034US2011043964A1Ceramic powder composition, ceramic material, and multi-layer ceramic capacitor fabricated therebyDARFON ELECTRONICS CORP·Filed 2010·Application pending·0 cites
- 4132US2002142610A1Plasma etching of dielectric layer with selectivity to stop layerFiled 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →