Inventor · disambiguated record
Anneli Munkholm
Also filed as: MUNKHOLM ANNELI
12 granted patents·2 pending applications·203 citations·filing 2001–2022
90Inventor score
Files withFACEBOOK TECH LLC4KONINKL PHILIPS ELECTRONICS NV3LUMILEDS LIGHTING LLC2CHUNG THEODORE1GOETZ WERNER K1
Top patents by PatentIndex Score
14 records- 0197US11175447B1Waveguide in-coupling using polarized light emitting diodesFACEBOOK TECH LLC·Filed 2019·Granted Nov 16, 2021·34 cites·20 claims
- 0296US10923630B1P—GaN-down micro-LED on semi-polar oriented GaNFACEBOOK TECH LLC·Filed 2019·Granted Feb 16, 2021·27 cites·20 claims
- 0396US10573781B1Light emitting diode with tunnel junctionFACEBOOK TECH LLC·Filed 2018·Granted Feb 25, 2020·20 cites·20 claims
- 0492US6630692B2III-Nitride light emitting devices with low driving voltageLUMILEDS LIGHTING LLC·Filed 2001·Granted Oct 7, 2003·73 cites·28 claims
- 0585US6989555B2Strain-controlled III-nitride light emitting deviceLUMILEDS LIGHTING LLC·Filed 2004·Granted Jan 24, 2006·44 cites·15 claims
- 0681US12298551B1Methods for correcting substrate thickness variation for waveguide applicationsMETA PLATFORMS TECH LLC·Filed 2022·Granted May 13, 2025·1 cites·20 claims
- 0770US11195973B1III-nitride micro-LEDs on semi-polar oriented GaNFACEBOOK TECH LLC·Filed 2019·Granted Dec 7, 2021·1 cites·20 claims
- 0860US7906357B2P-type layer for a III-nitride light emitting deviceKONINKL PHILIPS ELECTRONICS NV·Filed 2006·Granted Mar 15, 2011·1 cites·15 claims
- 0959US8692286B2Light emitting device with bonded interfaceGRILLOT PATRICK N·Filed 2007·Granted Apr 8, 2014·2 cites·18 claims
- 1053US8017958B2P-contact layer for a III-P semiconductor light emitting deviceKONINKL PHILIPS ELECTRONICS NV·Filed 2009·Granted Sep 13, 2011·0 cites·13 claims
- 1151US2011121358A1P-type layer for a iii-nitride light emitting deviceKONINKL PHILIPS ELECTRONICS NV·Filed 2011·Application pending·0 cites
- 1249US9905730B2Light emitting device with bonded interfaceLUMILEDS LLC·Filed 2014·Granted Feb 27, 2018·0 cites·6 claims
- 1347US8816368B2P-contact layer for a III-P semiconductor light emitting deviceCHUNG THEODORE·Filed 2011·Granted Aug 26, 2014·0 cites·12 claims
- 1447US2006011937A1Strain-controlled III-nitride light emitting deviceGOETZ WERNER K·Filed 2005·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →