P-type layer for a iii-nitride light emitting device

Abstract

A semiconductor structure includes a light emitting region, a p-type region disposed on a first side of the light emitting region, and an n-type region disposed on a second side of the light emitting region. At least 10% of a thickness of the semiconductor structure on the first side of the light emitting region comprises indium. Some examples of such a semiconductor light emitting device may be formed by growing an n-type region, growing a p-type region, and growing a light emitting layer disposed between the n-type region and the p-type region. The difference in temperature between the growth temperature of a part of the n-type region and the growth temperature of a part of the p-type region is at least 140° C.

1 . A device comprising:
 a semiconductor structure including a light emitting region, a p-type region disposed on a first side of the light emitting region, and an n-type region disposed on a second side of the light emitting region;   wherein at least 10% of a thickness of the semiconductor structure on the first side of the light emitting region comprises indium.   
     
     
         2 . The device of  claim 1  wherein at least 25% of a thickness of the semiconductor structure on the first side of the light emitting region comprises indium. 
     
     
         3 . The device of  claim 1  wherein at least 50% of a thickness of the semiconductor structure on the first side of the light emitting region comprises indium. 
     
     
         4 . The device of  claim 1  wherein at least 60% of a thickness of the semiconductor structure on the first side of the light emitting region comprises indium. 
     
     
         5 . The device of  claim 1  wherein the light emitting region is configured to emit light having a peak wavelength of at least 500 nm. 
     
     
         6 . The device of  claim 1  wherein:
 a portion of the n-type region is grown at a first temperature; 
 a portion of the region comprising indium on the first side of the light emitting region is grown at a second temperature; and 
 a difference between the first temperature and the second temperature is at least 140 C. 
 
     
     
         7 . The device of  claim 1  wherein the region comprising indium on the first side of the light emitting region is one of InGaN and AlInGaN. 
     
     
         8 - 24 . (canceled)