Inventor · disambiguated record
Elbert E. Huang
Also filed as: DALTON TIMOTHY J · HUANG ELBERT · HUANG ELBERT E · HUANG ELBERT EMIN
118 granted patents·19 pending applications·2,087 citations·filing 2001–2024
99Inventor score
Files withIBM95GLOBALFOUNDRIES INC7EDELSTEIN DANIEL C6TESSERA INC6ADEIA SEMICONDUCTOR SOLUTIONS LLC4
Top patents by PatentIndex Score
137 records- 0199US10229851B2Self-forming barrier for use in air gap formationIBM·Filed 2016·Granted Mar 12, 2019·317 cites·14 claims
- 0299US9502350B1Interconnect scaling method including forming dielectric layer over subtractively etched first conductive layer and forming second conductive material on dielectric layerIBM·Filed 2016·Granted Nov 22, 2016·49 cites·14 claims
- 0399US9324650B2Interconnect structures with fully aligned viasIBM·Filed 2014·Granted Apr 26, 2016·79 cites·7 claims
- 0499US9305836B1Air gap semiconductor structure with selective cap bilayerIBM·Filed 2014·Granted Apr 5, 2016·488 cites·10 claims
- 0598US9786760B1Air gap and air spacer pinch offIBM·Filed 2016·Granted Oct 10, 2017·22 cites·7 claims
- 0698US9685406B1Selective and non-selective barrier layer wet removalIBM·Filed 2016·Granted Jun 20, 2017·34 cites·14 claims
- 0798US9601426B1Interconnect structure having subtractive etch feature and damascene featureIBM·Filed 2016·Granted Mar 21, 2017·26 cites·5 claims
- 0898US9349687B1Advanced manganese/manganese nitride cap/etch mask for air gap formation scheme in nanocopper low-K interconnectIBM·Filed 2015·Granted May 24, 2016·96 cites·20 claims
- 0996US8390079B2Sealed air gap for semiconductor chipHORAK DAVID V·Filed 2010·Granted Mar 5, 2013·26 cites·4 claims
- 1096US8288268B2Microelectronic structure including air gapEDELSTEIN DANIEL C·Filed 2010·Granted Oct 16, 2012·24 cites·20 claims
- 1196US8232618B2Semiconductor structure having a contact-level air gap within the interlayer dielectrics above a semiconductor device and a method of forming the semiconductor structure using a self-assembly approachBREYTA GREGORY·Filed 2010·Granted Jul 31, 2012·33 cites·12 claims
- 1296US6911400B2Nonlithographic method to produce self-aligned mask, articles produced by same and compositions for sameIBM·Filed 2002·Granted Jun 28, 2005·79 cites·49 claims
- 1395US10256186B2Interconnect structure having subtractive etch feature and damascene featureIBM·Filed 2017·Granted Apr 9, 2019·9 cites·16 claims
- 1495US7365378B2MOSFET structure with ultra-low K spacerIBM·Filed 2005·Granted Apr 29, 2008·32 cites·19 claims
- 1595US7309649B2Method of forming closed air gap interconnects and structures formed therebyIBM·Filed 2006·Granted Dec 18, 2007·33 cites·15 claims
- 1694US9793193B1Air gap and air spacer pinch offIBM·Filed 2016·Granted Oct 17, 2017·7 cites·7 claims
- 1794US9472477B1Electromigration test structure for Cu barrier integrity and blech effect evaluationsIBM·Filed 2015·Granted Oct 18, 2016·6 cites·9 claims
- 1894US8114769B1Methods and structures to enable self-aligned via etch for Cu damascene structure using trench first metal hard mask (TFMHM) schemeSRIVASTAVA RAVI PRAKASH·Filed 2010·Granted Feb 14, 2012·29 cites·20 claims
- 1994US7393776B2Method of forming closed air gap interconnects and structures formed therebyIBM·Filed 2006·Granted Jul 1, 2008·26 cites·6 claims
- 2094US7361991B2Closed air gap interconnect structureIBM·Filed 2003·Granted Apr 22, 2008·67 cites·11 claims
- 2193US10002831B2Selective and non-selective barrier layer wet removalIBM·Filed 2017·Granted Jun 19, 2018·7 cites·15 claims
- 2293US9852980B2Interconnect structure having substractive etch feature and damascene featureIBM·Filed 2017·Granted Dec 26, 2017·7 cites·20 claims
- 2393US9806023B1Selective and non-selective barrier layer wet removalIBM·Filed 2017·Granted Oct 31, 2017·8 cites·20 claims
- 2493US9105693B2Microelectronic structure including air gapEDELSTEIN DANIEL C·Filed 2012·Granted Aug 11, 2015·11 cites·8 claims
- 2593US8461678B2Structure with self aligned resist layer on an interconnect surface and method of making sameEDELSTEIN DANIEL C·Filed 2012·Granted Jun 11, 2013·11 cites·18 claims
- 2692US9911690B2Interconnect structures with fully aligned viasIBM·Filed 2016·Granted Mar 6, 2018·6 cites·12 claims
- 2792US7943480B2Sub-lithographic dimensioned air gap formation and related structureIBM·Filed 2008·Granted May 17, 2011·18 cites·13 claims
- 2892US6641899B1Nonlithographic method to produce masks by selective reaction, articles produced, and composition for sameIBM·Filed 2002·Granted Nov 4, 2003·43 cites·11 claims
- 2991US11837501B2Selective recessing to form a fully aligned viaADEIA SEMICONDUCTOR SOLUTIONS LLC·Filed 2022·Granted Dec 5, 2023·1 cites·26 claims
- 3091US9881833B1Barrier planarization for interconnect metallizationIBM·Filed 2016·Granted Jan 30, 2018·6 cites·16 claims
- 3191US9711455B2Method of forming an air gap semiconductor structure with selective cap bilayerIBM·Filed 2015·Granted Jul 18, 2017·5 cites·12 claims
- 3291US9431292B1Alternate dual damascene method for forming interconnectsGLOBALFOUNDRIES INC·Filed 2015·Granted Aug 30, 2016·8 cites·20 claims
- 3391US8129286B2Reducing effective dielectric constant in semiconductor devicesEDELSTEIN DANIEL C·Filed 2008·Granted Mar 6, 2012·11 cites·32 claims
- 3491US8030202B1Temporary etchable liner for forming air gapIBM·Filed 2010·Granted Oct 4, 2011·13 cites·20 claims
- 3591US7892940B2Device and methodology for reducing effective dielectric constant in semiconductor devicesIBM·Filed 2007·Granted Feb 22, 2011·11 cites·25 claims
- 3691US7405147B2Device and methodology for reducing effective dielectric constant in semiconductor devicesIBM·Filed 2004·Granted Jul 29, 2008·35 cites·31 claims
- 3790US10242933B2Air gap and air spacer pinch offIBM·Filed 2017·Granted Mar 26, 2019·4 cites·20 claims
- 3890US2025140611A1Selective recessing to form a fully aligned viaADEIA SEMICONDUCTOR SOLUTIONS LLC·Filed 2024·Application pending·0 cites
- 3989US8871624B2Sealed air gap for semiconductor chipIBM·Filed 2013·Granted Oct 28, 2014·8 cites·15 claims
- 4089US8735279B2Air-dielectric for subtractive etch line and via metallizationHORAK DAVID V·Filed 2011·Granted May 27, 2014·9 cites·14 claims
- 4189US8470706B2Methods to mitigate plasma damage in organosilicate dielectricsARNOLD JOHN C·Filed 2012·Granted Jun 25, 2013·8 cites·15 claims
- 4289US8343868B2Device and methodology for reducing effective dielectric constant in semiconductor devicesIBM·Filed 2011·Granted Jan 1, 2013·6 cites·20 claims
- 4388US9960117B2Air gap semiconductor structure with selective cap bilayerIBM·Filed 2015·Granted May 1, 2018·4 cites·18 claims
- 4488US8492270B2Structure for nano-scale metallization and method for fabricating samePONOTH SHOM·Filed 2010·Granted Jul 23, 2013·7 cites·13 claims
- 4587US7592685B2Device and methodology for reducing effective dielectric constant in semiconductor devicesIBM·Filed 2007·Granted Sep 22, 2009·7 cites·20 claims
- 4686US9064871B2Vertical electronic fuseIBM·Filed 2014·Granted Jun 23, 2015·6 cites·15 claims
- 4786US8828862B2Air-dielectric for subtractive etch line and via metallizationIBM·Filed 2014·Granted Sep 9, 2014·6 cites·3 claims
- 4886US6930034B2Robust ultra-low k interconnect structures using bridge-then-metallization fabrication sequenceIBM·Filed 2002·Granted Aug 16, 2005·43 cites·19 claims
- 4985US10049974B2Metal silicate spacers for fully aligned viasIBM·Filed 2016·Granted Aug 14, 2018·4 cites·13 claims
- 5085US9666529B2Method and structure to reduce the electric field in semiconductor wiring interconnectsIBM·Filed 2015·Granted May 30, 2017·4 cites·11 claims
Showing the top 50 of 137 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →