Inventor · disambiguated record
Deok-Hyung Lee
Also filed as: LEE DEOK-HYUNG
43 granted patents·9 pending applications·1,039 citations·filing 1999–2011
98Inventor score
Files withSAMSUNG ELECTRONICS CO LTD38LEE DEOK-HYUNG4SON YONG-HOON3UNIV CALIFORNIA2JEONG SEONG-HOON1
Top patents by PatentIndex Score
52 records- 0198US7074662B2Methods for fabricating fin field effect transistors using a protective layer to reduce etching damageSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jul 11, 2006·176 cites·43 claims
- 0296US7501674B2Semiconductor device having fin transistor and planar transistor and associated methods of manufactureSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Mar 10, 2009·38 cites·14 claims
- 0396US7320908B2Methods of forming semiconductor devices having buried oxide patternsSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jan 22, 2008·34 cites·14 claims
- 0496US7141856B2Multi-structured Si-finSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Nov 28, 2006·104 cites·10 claims
- 0594US7534686B2Multi-structured Si-fin and method of manufactureSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted May 19, 2009·26 cites·15 claims
- 0694US7535061B2Fin-field effect transistors (Fin-FETs) having protection layersSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted May 19, 2009·23 cites·15 claims
- 0793US6572937B2Method for producing fluorinated diamond-like carbon filmsUNIV CALIFORNIA·Filed 2000·Granted Jun 3, 2003·195 cites·2 claims
- 0892US7842566B2FinFET and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Nov 30, 2010·20 cites·13 claims
- 0992US7385237B2Fin field effect transistors with low resistance contact structuresSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jun 10, 2008·24 cites·25 claims
- 1091US8304318B2Methods of fabricating MOS transistors having recesses with elevated source/drain regionsSON YONG-HOON·Filed 2011·Granted Nov 6, 2012·9 cites·10 claims
- 1191US7998851B2Semiconductor devices having contact plugs with stress buffer spacers and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Aug 16, 2011·11 cites·20 claims
- 1290US7326608B2Fin field effect transistor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Feb 5, 2008·16 cites·13 claims
- 1390US7071048B2Methods of fabricating fin field effect transistors having capping insulation layersSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jul 4, 2006·40 cites·20 claims
- 1488US8039350B2Methods of fabricating MOS transistors having recesses with elevated source/drain regionsSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Oct 18, 2011·9 cites·22 claims
- 1588US7122871B2Integrated circuit field effect transistors including channel-containing fin having regions of high and low doping concentrationsSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Oct 17, 2006·35 cites·13 claims
- 1687US7521301B2Methods for fabricating integrated circuit field effect transistors including channel-containing fin having regions of high and low doping concentrationsSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Apr 21, 2009·10 cites·12 claims
- 1787US7442596B2Methods of manufacturing fin type field effect transistorsSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Oct 28, 2008·12 cites·19 claims
- 1887US7394117B2Fin field effect transistors including epitaxial finsSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jul 1, 2008·9 cites·13 claims
- 1986US7642589B2Fin field effect transistors having capping insulation layersSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jan 5, 2010·9 cites·6 claims
- 2086US6572935B1Optically transparent, scratch-resistant, diamond-like carbon coatingsUNIV CALIFORNIA·Filed 1999·Granted Jun 3, 2003·68 cites·12 claims
- 2184US8008698B2Semiconductor memory devices having vertical channel transistors and related methodsSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Aug 30, 2011·11 cites·18 claims
- 2283US7176067B2Methods of fabricating fin field effect transistorsSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Feb 13, 2007·23 cites·24 claims
- 2380US7683421B2NAND-type flash memory devices including selection transistors with an anti-punchthrough impurity region and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Mar 23, 2010·9 cites·20 claims
- 2480US6890823B2Methods of forming integrated circuits with thermal oxide layers on side walls of gate electrodes wherein the source and drain are higher than the gate electrodeSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted May 10, 2005·28 cites·30 claims
- 2578US7652340B2Fin field effect transistor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jan 26, 2010·6 cites·14 claims
- 2677US7141456B2Methods of fabricating Fin-field effect transistors (Fin-FETs) having protection layersSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Nov 28, 2006·16 cites·13 claims
- 2774US7683405B2MOS transistors having recesses with elevated source/drain regionsSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Mar 23, 2010·12 cites·15 claims
- 2874US7393700B2Low temperature methods of etching semiconductor substratesSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jul 1, 2008·4 cites·25 claims
- 2973US7268396B2Finfets having first and second gates of different resistivitiesSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Sep 11, 2007·15 cites·15 claims
- 3071US7579249B2Methods for fabricating DRAM semiconductor devices including silicon epitaxial and metal silicide layersSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Aug 25, 2009·3 cites·7 claims
- 3171US6900102B2Methods of forming double gate electrodes using tunnel and trenchSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted May 31, 2005·13 cites·28 claims
- 3266US7358588B2Trench isolation type semiconductor device which prevents a recess from being formed in a field regionSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Apr 15, 2008·3 cites·6 claims
- 3366US7205609B2Methods of forming semiconductor devices including fin structures and related devicesSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Apr 17, 2007·10 cites·24 claims
- 3464US8692372B2Semiconductor device having impurity doped polycrystalline layer including impurity diffusion prevention layer and dynamic random memory device including the semiconductor deviceLEE DONG-KAK·Filed 2010·Granted Apr 8, 2014·2 cites·6 claims
- 3564US7511340B2Semiconductor devices having gate structures and contact pads that are lower than the gate structuresSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Mar 31, 2009·2 cites·15 claims
- 3661US8183136B2Method of forming insulating layer and method of manufacturing transistor using the sameJEONG SEONG-HOON·Filed 2010·Granted May 22, 2012·1 cites·10 claims
- 3757US7795110B2Trench isolation type semiconductor device which prevents a recess from being formed in a field region and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Sep 14, 2010·1 cites·12 claims
- 3855US7338867B2Semiconductor device having contact pads and method for manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Mar 4, 2008·5 cites·32 claims
- 3955US6963094B2Metal oxide semiconductor transistors having a drain punch through blocking region and methods for fabricating metal oxide semiconductor transistors having a drain punch through blocking regionSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Nov 8, 2005·4 cites·41 claims
- 4055US2009174001A1Semiconductor device having fin transistor and planar transistor and associated methods of manufactureSAMSUNG ELECTRONICS CO LTD·Filed 2009·Application pending·0 cites
- 4151US8481416B2Semiconductor devices having contact plugs with stress buffer spacers and methods of fabricating the sameSON YONG-HOON·Filed 2011·Granted Jul 9, 2013·0 cites·20 claims
- 4250US7494877B2Methods of forming semiconductor devices including Fin structuresSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Feb 24, 2009·0 cites·25 claims
- 4350US7081391B2Integrated circuit devices having buried insulation layers and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Jul 25, 2006·3 cites·13 claims
- 4446US2006226455A1Integrated circuit devices having buried insulation layers and methods of forming the sameLEE BYEONG-CHAN·Filed 2006·Application pending·0 cites
- 4546US2005248035A1Semiconductor devices having contact plugs with stress buffer spacers and methods of fabricating the sameSON YONG-HOON·Filed 2005·Application pending·0 cites
- 4642US2008048262A1Fin field effect transistor and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 4741US2005199948A1Fin field effect transistors with epitaxial extension layers and methods of forming the sameFiled 2005·Application pending·0 cites
- 4837US2004021164A1DRAM semiconductor device and method for fabricating the sameFiled 2003·Application pending·0 cites
- 4936US2007006800A1Methods of selectively forming an epitaxial semiconductor layer using ultra high vacuum chemical vapor deposition technique and batch-type ultra high vacuum chemical vapor deposition apparatus used thereinLEE DEOK-HYUNG·Filed 2006·Application pending·0 cites
- 5035US2008073730A1Semiconductor device and method for formimg the sameLEE DEOK-HYUNG·Filed 2007·Application pending·0 cites
Showing the top 50 of 52 patent records by PatentIndex Score.
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