Inventor · disambiguated record
Indira Seshadri
Also filed as: SESHADRI INDIRA · SESHADRI INDIRA P · SESHADRI INDIRA P V · SESHADRI INDIRA PRIYAVARSHINI
47 granted patents·10 pending applications·93 citations·filing 2017–2024
97Inventor score
Top patents by PatentIndex Score
57 records- 0197US10304744B1Inverse tone direct print EUV lithography enabled by selective material depositionIBM·Filed 2018·Granted May 28, 2019·23 cites·14 claims
- 0296US10361129B1Self-aligned double patterning formed fincutIBM·Filed 2018·Granted Jul 23, 2019·14 cites·18 claims
- 0395US10276452B1Low undercut N-P work function metal patterning in nanosheet replacement metal gate processIBM·Filed 2018·Granted Apr 30, 2019·13 cites·14 claims
- 0495US10176997B1Direct gate patterning for vertical transport field effect transistorIBM·Filed 2017·Granted Jan 8, 2019·12 cites·13 claims
- 0593US11810828B2Transistor boundary protection using reversible crosslinking reflowIBM·Filed 2021·Granted Nov 7, 2023·2 cites·19 claims
- 0693US11621326B2Vertical field effect transistor with crosslink fin arrangementIBM·Filed 2020·Granted Apr 4, 2023·2 cites·6 claims
- 0791US10049876B1Removal of trilayer resist without damage to underlying structureIBM·Filed 2017·Granted Aug 14, 2018·5 cites·20 claims
- 0889US11251182B2Staggered stacked vertical crystalline semiconducting channelsIBM·Filed 2020·Granted Feb 15, 2022·2 cites·25 claims
- 0987US10254652B2Approach to lowering extreme ultraviolet exposure dose for inorganic hardmasks for extreme ultraviolet patterningIBM·Filed 2018·Granted Apr 9, 2019·3 cites·20 claims
- 1085US10082736B2Approach to lowering extreme ultraviolet exposure dose for inorganic hardmasks for extreme ultraviolet patterningIBM·Filed 2017·Granted Sep 25, 2018·3 cites·20 claims
- 1184US10395925B2Patterning material film stack comprising hard mask layer having high metal content interface to resist layerIBM·Filed 2017·Granted Aug 27, 2019·4 cites·20 claims
- 1281US11245027B2Bottom source/drain etch with fin-cut-last-VTFETIBM·Filed 2020·Granted Feb 8, 2022·1 cites·8 claims
- 1381US10629495B2Low undercut N-P work function metal patterning in nanosheet replacement metal gate processIBM·Filed 2019·Granted Apr 21, 2020·2 cites·20 claims
- 1480US10903124B2Transistor structure with n/p boundary bufferIBM·Filed 2019·Granted Jan 26, 2021·2 cites·13 claims
- 1579US12021135B2Bottom source/drain etch with fin-cut-last-VTFETIBM·Filed 2023·Granted Jun 25, 2024·0 cites·7 claims
- 1677US11075281B2Additive core subtractive liner for metal cut etch processesIBM·Filed 2019·Granted Jul 27, 2021·1 cites·20 claims
- 1777US10658521B2Enabling residue free gap fill between nanosheetsIBM·Filed 2018·Granted May 19, 2020·1 cites·14 claims
- 1877US9799534B1Application of titanium-oxide as a patterning hardmaskIBM·Filed 2017·Granted Oct 24, 2017·2 cites·20 claims
- 1976US12002856B2Vertical field effect transistor with crosslink fin arrangementIBM·Filed 2023·Granted Jun 4, 2024·0 cites·25 claims
- 2073US11695059B2Bottom source/drain etch with fin-cut-last-VTFETIBM·Filed 2021·Granted Jul 4, 2023·0 cites·6 claims
- 2173US10665461B2Semiconductor device with multiple threshold voltagesIBM·Filed 2018·Granted May 26, 2020·1 cites·18 claims
- 2270US11515431B2Enabling residue free gap fill between nanosheetsIBM·Filed 2020·Granted Nov 29, 2022·0 cites·17 claims
- 2369US2023369492A1Forming crossbar and non-crossbar transistors on the same substrateIBM·Filed 2023·Application pending·0 cites
- 2466US11756961B2Staggered stacked vertical crystalline semiconducting channelsIBM·Filed 2022·Granted Sep 12, 2023·0 cites·20 claims
- 2566US10957536B2Removal of trilayer resist without damage to underlying structureELPIS TECH INC·Filed 2019·Granted Mar 23, 2021·0 cites·13 claims
- 2665US11742426B2Forming crossbar and non-crossbar transistors on the same substrateIBM·Filed 2021·Granted Aug 29, 2023·0 cites·6 claims
- 2765US11152489B2Additive core subtractive liner for metal cut etch processesIBM·Filed 2019·Granted Oct 19, 2021·0 cites·20 claims
- 2862US11855191B2Vertical FET with contact to gate above active finIBM·Filed 2021·Granted Dec 26, 2023·0 cites·20 claims
- 2962US11569132B2Transistor structure with N/P boundary bufferIBM·Filed 2020·Granted Jan 31, 2023·0 cites·7 claims
- 3062US11500293B2Patterning material film stack with hard mask layer configured to support selective deposition on patterned resist layerIBM·Filed 2019·Granted Nov 15, 2022·0 cites·20 claims
- 3161US2025385124A1Self-aligned gate cut structureIBM·Filed 2024·Application pending·0 cites
- 3260US12484296B2Fork sheet device with wrapped source and drain contact to prevent NFET to PFET contact shortage in a tight spaceIBM·Filed 2022·Granted Nov 25, 2025·0 cites·19 claims
- 3360US12457762B2Cross bar vertical FETsIBM·Filed 2021·Granted Oct 28, 2025·0 cites·9 claims
- 3460US12310100B2Dielectric reflow for boundary controlIBM·Filed 2021·Granted May 20, 2025·0 cites·10 claims
- 3560US12107132B2Source/drain contact positioning under power railIBM·Filed 2021·Granted Oct 1, 2024·0 cites·15 claims
- 3660US11075081B2Semiconductor device with multiple threshold voltagesIBM·Filed 2019·Granted Jul 27, 2021·0 cites·20 claims
- 3759US11916143B2Vertical transport field-effect transistor with gate patterningIBM·Filed 2021·Granted Feb 27, 2024·0 cites·10 claims
- 3858US12268026B2High aspect ratio contact structure with multiple metal stacksIBM·Filed 2022·Granted Apr 1, 2025·0 cites·20 claims
- 3958US11043494B2Structure and method for equal substrate to channel height between N and P fin-FETsIBM·Filed 2019·Granted Jun 22, 2021·0 cites·19 claims
- 4058US10656527B2Patterning material film stack with hard mask layer configured to support selective deposition on patterned resist layerIBM·Filed 2017·Granted May 19, 2020·0 cites·20 claims
- 4157US12374615B2Electronic devices with a low dielectric constantIBM·Filed 2021·Granted Jul 29, 2025·0 cites·20 claims
- 4257US2025048688A1Stacked field effect transistorsIBM·Filed 2023·Application pending·0 cites
- 4357US2018286680A1Removal of trilayer resist without damage to underlying structureIBM·Filed 2018·Application pending·0 cites
- 4456US11276767B2Additive core subtractive liner for metal cut etch processesIBM·Filed 2017·Granted Mar 15, 2022·0 cites·6 claims
- 4556US2019355625A1Inverse tone direct print euv lithography enabled by selective material depositionIBM·Filed 2019·Application pending·0 cites
- 4655US10985025B2Fin cut profile using fin base linerIBM·Filed 2018·Granted Apr 20, 2021·0 cites·20 claims
- 4754US11710768B2Hybrid diffusion break with EUV gate patterningIBM·Filed 2021·Granted Jul 25, 2023·0 cites·20 claims
- 4854US2025125261A1Semiconductor structures with multi-stage viasIBM·Filed 2023·Application pending·0 cites
- 4953US10699912B2Damage free hardmask stripIBM·Filed 2018·Granted Jun 30, 2020·0 cites·20 claims
- 5053US2024072035A1Flexible cell boundary with curved gate cut regionIBM·Filed 2022·Application pending·0 cites
Showing the top 50 of 57 patent records by PatentIndex Score.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →