Inventor · disambiguated record
Kathryn T. Schonenberg
Also filed as: SCHONENBERG KATHRYN T · SCHONENBERG KATHRYN TURNER
54 granted patents·9 pending applications·425 citations·filing 1999–2017
98Inventor score
Top patents by PatentIndex Score
63 records- 0194US8492234B2Field effect transistor deviceCHAN KEVIN K·Filed 2010·Granted Jul 23, 2013·16 cites·12 claims
- 0293US9379012B2Oxide mediated epitaxial nickel disilicide alloy contact formationGLOBALFOUNDRIES INC·Filed 2016·Granted Jun 28, 2016·7 cites·18 claims
- 0392US7119416B1Bipolar transistor structure with self-aligned raised extrinsic base and methodsIBM·Filed 2005·Granted Oct 10, 2006·21 cites·6 claims
- 0490US7144787B2Methods to improve the SiGe heterojunction bipolar device performanceIBM·Filed 2005·Granted Dec 5, 2006·16 cites·17 claims
- 0588US9236345B2Oxide mediated epitaxial nickel disilicide alloy contact formationGLOBALFOUNDRIES INC·Filed 2014·Granted Jan 12, 2016·6 cites·12 claims
- 0687US7682917B2Disposable metallic or semiconductor gate spacerIBM·Filed 2008·Granted Mar 23, 2010·11 cites·20 claims
- 0786US6864560B2Bipolar transistor structure with a shallow isolation extension region providing reduced parasitic capacitanceIBM·Filed 2003·Granted Mar 8, 2005·41 cites·20 claims
- 0886US6534371B2C implants for improved SiGe bipolar yieldIBM·Filed 2001·Granted Mar 18, 2003·28 cites·23 claims
- 0986US6426265B1Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technologyIBM·Filed 2001·Granted Jul 30, 2002·25 cites·23 claims
- 1085US9093425B1Self-aligned liner formed on metal semiconductor alloy contactsIBM·Filed 2014·Granted Jul 28, 2015·6 cites·9 claims
- 1184US7170083B2Bipolar transistor with collector having an epitaxial Si:C regionIBM·Filed 2005·Granted Jan 30, 2007·9 cites·7 claims
- 1283US7750371B2Silicon germanium heterojunction bipolar transistor structure and methodIBM·Filed 2007·Granted Jul 6, 2010·6 cites·21 claims
- 1383US7476914B2Methods to improve the SiGe heterojunction bipolar device performanceIBM·Filed 2006·Granted Jan 13, 2009·8 cites·7 claims
- 1482US7037798B2Bipolar transistor structure with self-aligned raised extrinsic base and methodsIBM·Filed 2004·Granted May 2, 2006·26 cites·7 claims
- 1582US6982442B2Structure and method for making heterojunction bipolar transistor having self-aligned silicon-germanium raised extrinsic baseIBM·Filed 2004·Granted Jan 3, 2006·37 cites·9 claims
- 1678US8618617B2Field effect transistor deviceIBM·Filed 2013·Granted Dec 31, 2013·3 cites·9 claims
- 1778US6780695B1BiCMOS integration scheme with raised extrinsic baseIBM·Filed 2003·Granted Aug 24, 2004·24 cites·17 claims
- 1877US7598147B2Method of forming CMOS with Si:C source/drain by laser melting and recrystallizationIBM·Filed 2007·Granted Oct 6, 2009·5 cites·20 claims
- 1977US6744079B2Optimized blocking impurity placement for SiGe HBTsIBM·Filed 2002·Granted Jun 1, 2004·19 cites·12 claims
- 2076US7919379B2Dielectric spacer removalIBM·Filed 2007·Granted Apr 5, 2011·5 cites·14 claims
- 2175US8338279B2Reduced pattern loading for doped epitaxial process and semiconductor structureDUBE ABHISHEK·Filed 2011·Granted Dec 25, 2012·3 cites·16 claims
- 2275US6869852B1Self-aligned raised extrinsic base bipolar transistor structure and methodIBM·Filed 2004·Granted Mar 22, 2005·20 cites·14 claims
- 2371US7678634B2Local stress engineering for CMOS devicesIBM·Filed 2008·Granted Mar 16, 2010·4 cites·20 claims
- 2471US7511317B2Porous silicon for isolation region formation and related structureIBM·Filed 2006·Granted Mar 31, 2009·4 cites·4 claims
- 2571US6927476B2Bipolar device having shallow junction raised extrinsic base and method for making the sameIBM·Filed 2001·Granted Aug 9, 2005·16 cites·34 claims
- 2670US9450069B2Silicon germanium heterojunction bipolar transistor structure and methodULTRATECH INC·Filed 2013·Granted Sep 20, 2016·1 cites·9 claims
- 2770US7442595B2Bipolar transistor with collector having an epitaxial Si:C regionIBM·Filed 2006·Granted Oct 28, 2008·3 cites·12 claims
- 2868US8455322B2Silicon germanium heterojunction bipolar transistor structure and methodGLUSCHENKOV OLEG·Filed 2010·Granted Jun 4, 2013·1 cites·20 claims
- 2966US9633946B1Seamless metallization contactsGLOBALFOUNDRIES INC·Filed 2016·Granted Apr 25, 2017·1 cites·20 claims
- 3066US8378424B2Semiconductor structure having test and transistor structuresIBM·Filed 2012·Granted Feb 19, 2013·1 cites·4 claims
- 3166US7713829B2Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technologyIBM·Filed 2006·Granted May 11, 2010·1 cites·14 claims
- 3265US9443772B2Diffusion-controlled semiconductor contact creationIBM·Filed 2014·Granted Sep 13, 2016·1 cites·18 claims
- 3364US9397181B2Diffusion-controlled oxygen depletion of semiconductor contact interfaceIBM·Filed 2014·Granted Jul 19, 2016·1 cites·2 claims
- 3463US9449827B2Metal semiconductor alloy contact resistance improvementIBM·Filed 2014·Granted Sep 20, 2016·1 cites·20 claims
- 3563US6429500B1Semiconductor pin diode for high frequency applicationsIBM·Filed 2000·Granted Aug 6, 2002·11 cites·13 claims
- 3660US6815802B2Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technologyIBM·Filed 2002·Granted Nov 9, 2004·5 cites·5 claims
- 3759US6844225B2Self-aligned mask formed utilizing differential oxidation rates of materialsIBM·Filed 2003·Granted Jan 18, 2005·5 cites·11 claims
- 3858US10032883B2Silicon germanium heterojunction bipolar transistor structure and methodULTRATECH INC·Filed 2016·Granted Jul 24, 2018·0 cites·11 claims
- 3958US6720590B2C implants for improved SiGe bipolar yieldIBM·Filed 2003·Granted Apr 13, 2004·4 cites·11 claims
- 4057US8426265B2Method for growing strain-inducing materials in CMOS circuits in a gate first flowBAI BO·Filed 2010·Granted Apr 23, 2013·1 cites·16 claims
- 4157US7900167B2Silicon germanium heterojunction bipolar transistor structure and methodIBM·Filed 2007·Granted Mar 1, 2011·1 cites·18 claims
- 4256US10707167B2Contacts to semiconductor substrate and methods of forming sameGLOBALFOUNDRIES INC·Filed 2017·Granted Jul 7, 2020·0 cites·6 claims
- 4355US8357953B2Bipolar transistor with low resistance base contactIBM·Filed 2009·Granted Jan 22, 2013·0 cites·15 claims
- 4454US7288827B2Self-aligned mask formed utilizing differential oxidation rates of materialsIBM·Filed 2004·Granted Oct 30, 2007·3 cites·4 claims
- 4554US2015270168A1Semiconductor contact with diffusion-controlled in situ insulator formationIBM·Filed 2014·Application pending·0 cites
- 4653US8981430B2Bipolar transistor with low resistance base contact and method of making the sameIBM·Filed 2012·Granted Mar 17, 2015·0 cites·19 claims
- 4752US9865546B2Contacts to semiconductor substrate and methods of forming sameGLOBALFOUNDRIES INC·Filed 2015·Granted Jan 9, 2018·0 cites·14 claims
- 4852US6977398B2C implants for improved SiGe bipolar yieldIBM·Filed 2004·Granted Dec 20, 2005·2 cites·20 claims
- 4951US9553157B2Diffusion-controlled oxygen depletion of semiconductor contact interfaceIBM·Filed 2015·Granted Jan 24, 2017·0 cites·4 claims
- 5051US9472406B2Metal semiconductor alloy contact resistance improvementIBM·Filed 2015·Granted Oct 18, 2016·0 cites·20 claims
Showing the top 50 of 63 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →