Inventor · disambiguated record
Arpan Mahorowala
Also filed as: MAHOROWALA ARPAN · MAHOROWALA ARPAN P · MAHOROWALA ARPAN PRAVIN
42 granted patents·12 pending applications·1,359 citations·filing 2000–2023
98Inventor score
Top patents by PatentIndex Score
54 records- 0198US12051589B2Tin oxide thin film spacers in semiconductor device manufacturingLAM RES CORP·Filed 2021·Granted Jul 30, 2024·6 cites·17 claims
- 0298US11784047B2Tin oxide thin film spacers in semiconductor device manufacturingLAM RES CORP·Filed 2021·Granted Oct 10, 2023·10 cites·17 claims
- 0398US11183383B2Tin oxide thin film spacers in semiconductor device manufacturingLAM RES CORP·Filed 2020·Granted Nov 23, 2021·16 cites·18 claims
- 0498US10074543B2High dry etch rate materials for semiconductor patterning applicationsLAM RES CORP·Filed 2016·Granted Sep 11, 2018·33 cites·26 claims
- 0598US9824893B1Tin oxide thin film spacers in semiconductor device manufacturingLAM RES CORP·Filed 2016·Granted Nov 21, 2017·442 cites·19 claims
- 0698US6316167B1Tunabale vapor deposited materials as antireflective coatings, hardmasks and as combined antireflective coating/hardmasks and methods of fabrication thereof and application thereofIBM·Filed 2000·Granted Nov 13, 2001·189 cites·50 claims
- 0797US11031245B2Tin oxide thin film spacers in semiconductor device manufacturingLAM RES CORP·Filed 2017·Granted Jun 8, 2021·21 cites·18 claims
- 0897US6514667B2Tunable vapor deposited materials as antireflective coatings, hardmasks and as combined antireflective coating/hardmasks and methods of fabrication thereof and applications thereofIBM·Filed 2001·Granted Feb 4, 2003·108 cites·21 claims
- 0996US6730454B2Antireflective SiO-containing compositions for hardmask layerIBM·Filed 2002·Granted May 4, 2004·112 cites·11 claims
- 1095US6420084B1Mask-making using resist having SIO bond-containing polymerIBM·Filed 2000·Granted Jul 16, 2002·83 cites·28 claims
- 1194US6649531B2Process for forming a damascene structureIBM·Filed 2001·Granted Nov 18, 2003·87 cites·20 claims
- 1293US10566194B2Selective deposition of etch-stop layer for enhanced patterningLAM RES CORP·Filed 2018·Granted Feb 18, 2020·5 cites·20 claims
- 1391US11987876B2Chamfer-less via integration schemeLAM RES CORP·Filed 2019·Granted May 21, 2024·6 cites·27 claims
- 1487US11094542B2Selective deposition of etch-stop layer for enhanced patterningLAM RES CORP·Filed 2020·Granted Aug 17, 2021·2 cites·20 claims
- 1583US7648820B2Antireflective hardmask and uses thereofIBM·Filed 2006·Granted Jan 19, 2010·7 cites·11 claims
- 1683US6869542B2Hard mask integrated etch process for patterning of silicon oxide and other dielectric materialsIBM·Filed 2003·Granted Mar 22, 2005·35 cites·17 claims
- 1781US7326442B2Antireflective composition and process of making a lithographic structureIBM·Filed 2005·Granted Feb 5, 2008·11 cites·24 claims
- 1881US6869899B2Lateral-only photoresist trimming for sub-80 nm gate stackIBM·Filed 2001·Granted Mar 22, 2005·26 cites·28 claims
- 1978US7545041B2Techniques for patterning features in semiconductor devicesIBM·Filed 2006·Granted Jun 9, 2009·4 cites·1 claims
- 2077US7030008B2Techniques for patterning features in semiconductor devicesIBM·Filed 2003·Granted Apr 18, 2006·14 cites·26 claims
- 2177US6780736B1Method for image reversal of implant resist using a single photolithography exposure and structures formed therebyIBM·Filed 2003·Granted Aug 24, 2004·16 cites·12 claims
- 2274US6849389B2Method to prevent pattern collapse in features etched in sulfur dioxide-containing plasmasIBM·Filed 2001·Granted Feb 1, 2005·16 cites·19 claims
- 2373US8293454B2Process of making a lithographic structure using antireflective materialsANGELOPOULOS MARIE·Filed 2008·Granted Oct 23, 2012·2 cites·25 claims
- 2473US7223517B2Lithographic antireflective hardmask compositions and uses thereofIBM·Filed 2003·Granted May 29, 2007·14 cites·29 claims
- 2573US2024030031A1Tin oxide thin film spacers in semiconductor device manufacturingLAM RES CORP·Filed 2023·Application pending·0 cites
- 2671US11869770B2Selective deposition of etch-stop layer for enhanced patterningLAM RES CORP·Filed 2021·Granted Jan 9, 2024·0 cites·20 claims
- 2770US7175966B2Water and aqueous base soluble antireflective coating/hardmask materialsIBM·Filed 2003·Granted Feb 13, 2007·9 cites·40 claims
- 2870US6903023B2In-situ plasma etch for TERA hard mask materialsIBM·Filed 2002·Granted Jun 7, 2005·15 cites·21 claims
- 2969US7172849B2Antireflective hardmask and uses thereofIBM·Filed 2003·Granted Feb 6, 2007·10 cites·22 claims
- 3069US6730445B2Attenuated embedded phase shift photomask blanksIBM·Filed 2002·Granted May 4, 2004·8 cites·21 claims
- 3166US7497959B2Methods and structures for protecting one area while processing another area on a chipIBM·Filed 2004·Granted Mar 3, 2009·7 cites·10 claims
- 3266US7077903B2Etch selectivity enhancement for tunable etch resistant anti-reflective layerIBM·Filed 2003·Granted Jul 18, 2006·9 cites·20 claims
- 3364US7485573B2Process of making a semiconductor device using multiple antireflective materialsIBM·Filed 2006·Granted Feb 3, 2009·1 cites·1 claims
- 3464US7172969B2Method and system for etching a film stackIBM·Filed 2004·Granted Feb 6, 2007·13 cites·28 claims
- 3564US6682860B2Attenuated embedded phase shift photomask blanksIBM·Filed 2002·Granted Jan 27, 2004·7 cites·23 claims
- 3660US6586156B2Etch improved resist systems containing acrylate (or methacrylate) silane monomersIBM·Filed 2001·Granted Jul 1, 2003·6 cites·23 claims
- 3759US2025068065A1Enhanced euv underlayer effect with diffusion barrier layerLAM RES CORP·Filed 2023·Application pending·0 cites
- 3858US8609322B2Process of making a lithographic structure using antireflective materialsANGELOPOULOS MARIE·Filed 2012·Granted Dec 17, 2013·0 cites·17 claims
- 3957US9059000B2Methods and structures for protecting one area while processing another area on a chipKIM DEOK-KEE·Filed 2008·Granted Jun 16, 2015·0 cites·17 claims
- 4057US7344991B2Method and apparatus for multilayer photoresist dry developmentTOKYO ELECTRON LTD·Filed 2003·Granted Mar 18, 2008·6 cites·7 claims
- 4156US2025328081A1Underlayer with bonded dopants for photolithographyLAM RES CORP·Filed 2023·Application pending·0 cites
- 4256US2008187731A1Techniques for Patterning Features in Semiconductor DevicesIBM·Filed 2008·Application pending·0 cites
- 4350US12372872B2Extreme ultraviolet (EUV) lithography using an intervening layer or a multi-layer stack with varying mean free paths for secondary electron generationLAM RES CORP·Filed 2020·Granted Jul 29, 2025·0 cites·13 claims
- 4449US6979518B2Attenuated embedded phase shift photomask blanksIBM·Filed 2003·Granted Dec 27, 2005·0 cites·21 claims
- 4547US2007015082A1Process of making a lithographic structure using antireflective materialsIBM·Filed 2005·Application pending·0 cites
- 4645US2024030062A1Integration of fully aligned via through selective deposition and resistivity reductionLAM RES CORP·Filed 2022·Application pending·0 cites
- 4744US2004256698A1Method for image reversal of implant resist using a single photolithography exposure and structures formed therebyIBM·Filed 2004·Application pending·0 cites
- 4841US2006154184A1Method for reducing feature line edge roughnessADVANCED MICRO DEVICES INC·Filed 2005·Application pending·0 cites
- 4940US2019131130A1Etching metal oxide substrates using ale and selective depositionLAM RES CORP·Filed 2017·Application pending·0 cites
- 5039US7968270B2Process of making a semiconductor device using multiple antireflective materialsIBM·Filed 2008·Granted Jun 28, 2011·0 cites·20 claims
Showing the top 50 of 54 patent records by PatentIndex Score.
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