Inventor · disambiguated record
Yosuke Miyoshi
Also filed as: MIYOSHI YOSUKE
11 granted patents·2 pending applications·426 citations·filing 1997–2003
92Inventor score
Top patents by PatentIndex Score
13 records- 0194US6100571AFet having non-overlapping field control electrode between gate and drainNEC CORP·Filed 1999·Granted Aug 8, 2000·151 cites·20 claims
- 0291US6483135B1Field effect transistorNEC COMPOUND SEMICONDUCTOR·Filed 1999·Granted Nov 19, 2002·93 cites·21 claims
- 0383US6462362B1Heterojunction bipolar transistor having prevention layer between base and emitterNEC CORP·Filed 2000·Granted Oct 8, 2002·34 cites·19 claims
- 0474US6325857B1CVD apparatusNEC CORP·Filed 1999·Granted Dec 4, 2001·41 cites·8 claims
- 0574US6069094AMethod for depositing a thin filmHIDEKI MATSUMRA·Filed 1997·Granted May 30, 2000·41 cites·13 claims
- 0660US6924201B2Heterojunction bipolar transistor and method of producing the sameNEC COMPOUND SEMICONDUCTOR·Filed 2003·Granted Aug 2, 2005·8 cites·24 claims
- 0760US6723664B2Method and apparatus for depositing a thin film, and semiconductor device having a semiconductor-insulator junctionMATSUMURA HIDEKI·Filed 2002·Granted Apr 20, 2004·6 cites·2 claims
- 0860US6349669B1Method and apparatus for depositing a thin film, and semiconductor device having a semiconductor-insulator junctionMATSUMURA HIDEKI·Filed 1998·Granted Feb 26, 2002·21 cites·13 claims
- 0959US6225241B1Catalytic deposition method for a semiconductor surface passivation filmNEC CORP·Filed 1998·Granted May 1, 2001·23 cites·3 claims
- 1049US6717192B2Schottky gate field effect transistorNEC COMPOUND SEMICONDUCTOR·Filed 2003·Granted Apr 6, 2004·4 cites·5 claims
- 1136US2002066909A1Heterojunction bipolar transistor and method of producing the sameNEC CORP·Filed 2001·Application pending·0 cites
- 1236US2003006437A1Field effect transistorNEC CORP·Filed 2002·Application pending·0 cites
- 1335US5942792ACompound semiconductor device having a multilayer silicon structure between an active region and insulator layer for reducing surface state density at interfaceNEC CORP·Filed 1998·Granted Aug 24, 1999·4 cites·17 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →