Inventor · disambiguated record
Kelly Malone
Also filed as: MALONE KELLY · MALONE KELLY O
32 granted patents·12 pending applications·245 citations·filing 2002–2019
97Inventor score
Top patents by PatentIndex Score
44 records- 0193US10333927B2Simulated SSO functionality by means of multiple authentication procedures and out-of-band communicationsIBM·Filed 2018·Granted Jun 25, 2019·8 cites·20 claims
- 0292US9807087B2Using an out-of-band password to provide enhanced SSO functionalityIBM·Filed 2015·Granted Oct 31, 2017·9 cites·17 claims
- 0391US7711462B2Vehicle help system and methodIBM·Filed 2006·Granted May 4, 2010·34 cites·36 claims
- 0490US10144275B2Environmental control in vehiclesIBM·Filed 2016·Granted Dec 4, 2018·9 cites·18 claims
- 0589US10305882B2Using a service-provider password to simulate F-SSO functionalityIBM·Filed 2015·Granted May 28, 2019·7 cites·20 claims
- 0686US7057287B2Dual damascene integration of ultra low dielectric constant porous materialsIBM·Filed 2003·Granted Jun 6, 2006·34 cites·29 claims
- 0785US7816253B2Surface treatment of inter-layer dielectricIBM·Filed 2006·Granted Oct 19, 2010·10 cites·6 claims
- 0883US7338895B2Method for dual damascene integration of ultra low dielectric constant porous materialsIBM·Filed 2006·Granted Mar 4, 2008·9 cites·33 claims
- 0981US7084479B2Line level air gapsIBM·Filed 2003·Granted Aug 1, 2006·27 cites·15 claims
- 1079US10063539B2SSO functionality by means of a temporary password and out-of-band communicationsIBM·Filed 2017·Granted Aug 28, 2018·2 cites·20 claims
- 1178USRE45781EToughness, adhesion and smooth metal lines of porous low K dielectric interconnect structuresHEDRICK JEFFREY C·Filed 2014·Granted Oct 27, 2015·4 cites·65 claims
- 1278US7439624B2Enhanced mechanical strength via contactsIBM·Filed 2006·Granted Oct 21, 2008·6 cites·3 claims
- 1377US7671470B2Enhanced mechanical strength via contactsIBM·Filed 2008·Granted Mar 2, 2010·5 cites·18 claims
- 1476US8099465B2Method and system for preparing and replying to multi-party e-mailsDANIELS FONDA J·Filed 2005·Granted Jan 17, 2012·7 cites·19 claims
- 1576US7737561B2Dual damascene integration of ultra low dielectric constant porous materialsIBM·Filed 2008·Granted Jun 15, 2010·5 cites·25 claims
- 1676US6783862B2Toughness, adhesion and smooth metal lines of porous low k dielectric interconnect structuresIBM·Filed 2002·Granted Aug 31, 2004·12 cites·51 claims
- 1773US9170296B2Semiconductor device defect monitoring using a plurality of temperature sensing devices in an adjacent semiconductor deviceIBM·Filed 2013·Granted Oct 27, 2015·3 cites·12 claims
- 1873US8647535B2Conductive metal and diffusion barrier seed compositions, and methods of use in semiconductor and interlevel dielectric substratesMALONE KELLY·Filed 2011·Granted Feb 11, 2014·3 cites·14 claims
- 1973US7396758B2Polycarbosilane buried etch stops in interconnect structuresIBM·Filed 2007·Granted Jul 8, 2008·4 cites·1 claims
- 2072US8037095B2Dynamic webcast content viewer method and systemIBM·Filed 2008·Granted Oct 11, 2011·11 cites·10 claims
- 2172US6831363B2Structure and method for reducing thermo-mechanical stress in stacked viasIBM·Filed 2002·Granted Dec 14, 2004·18 cites·15 claims
- 2271US8637412B2Process to form an adhesion layer and multiphase ultra-low k dielectric material using PECVDGRILL ALFRED·Filed 2011·Granted Jan 28, 2014·2 cites·15 claims
- 2366US7670943B2Enhanced mechanical strength via contactsIBM·Filed 2008·Granted Mar 2, 2010·2 cites·6 claims
- 2465US7933592B2Cellular telephone signal monitoring method and systemIBM·Filed 2007·Granted Apr 26, 2011·3 cites·20 claims
- 2564US9133531B2High energy treatment of cutter substrates having a wear resistant layerREESE MICHAEL R·Filed 2012·Granted Sep 15, 2015·0 cites·16 claims
- 2661US7187081B2Polycarbosilane buried etch stops in interconnect structuresIBM·Filed 2003·Granted Mar 6, 2007·7 cites·16 claims
- 2757US8735284B2Conductive metal and diffusion barrier seed compositions, and methods of use in semiconductor and interlevel dielectric substratesIBM·Filed 2013·Granted May 27, 2014·0 cites·20 claims
- 2855US7879717B2Polycarbosilane buried etch stops in interconnect structuresIBM·Filed 2008·Granted Feb 1, 2011·0 cites·14 claims
- 2955US6764873B2Semiconductor wafer including a low dielectric constant thermosetting polymer film and method of making sameIBM·Filed 2002·Granted Jul 20, 2004·4 cites·3 claims
- 3055US2019199707A1Using a service-provider password to simulate f-sso functionalityIBM·Filed 2019·Application pending·0 cites
- 3153US2014203336A1ADHESION LAYER AND MULTIPHASE ULTRA-LOW k DIELECTRIC MATERIALIBM·Filed 2014·Application pending·0 cites
- 3251US8252226B2High energy treatment of cutter substrates having a wear resistant layerREESE MICHAEL R·Filed 2009·Granted Aug 28, 2012·0 cites·38 claims
- 3348US2006264036A1Line level air gapsIBM·Filed 2006·Application pending·0 cites
- 3446US2008315347A1Providing gaps in capping layer to reduce tensile stress for beol fabrication of integrated circuitsIBM·Filed 2007·Application pending·0 cites
- 3546US2008124815A1Method for post cap ild/imd repair with uv irradiationIBM·Filed 2006·Application pending·0 cites
- 3644US10410497B1Anonymous notification and intervention of users requiring assistanceIBM·Filed 2018·Granted Sep 10, 2019·0 cites·20 claims
- 3744US8032834B2Context-based user assistanceIBM·Filed 2006·Granted Oct 4, 2011·0 cites·12 claims
- 3844US2008157270A1Metal to Metal Low-K AntifuseKIM DEOK-KEE·Filed 2006·Application pending·0 cites
- 3944US2008157268A1Fuse Element Using Low-K DielectricKIM DEOK-KEE·Filed 2006·Application pending·0 cites
- 4042US2005087490A1Process for removing impurities from low dielectric constant films disposed on semiconductor devicesIBM·Filed 2003·Application pending·0 cites
- 4142US2004253457A1Semiconductor wafer including a low dielectric constant thermosetting polymer film and method of making sameFiled 2004·Application pending·0 cites
- 4242US2007048981A1Method for protecting a semiconductor device from carbon depletion based damageIBM·Filed 2005·Application pending·0 cites
- 4341US2006128163A1Surface treatment of post-rie-damaged p-osg and other damaged materialsIBM·Filed 2004·Application pending·0 cites
- 4437US2004130027A1Improved formation of porous interconnection layersIBM·Filed 2003·Application pending·0 cites
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