Inventor · disambiguated record
Andreas Hellmich
Also filed as: HELLMICH ANDREAS
4 granted patents·1 pending application·22 citations·filing 2006–2016
70Inventor score
Technology areasH10P
Top patents by PatentIndex Score
5 records- 0188US7381622B2Method for forming embedded strained drain/source regions based on a combined spacer and cavity etch processADVANCED MICRO DEVICES INC·Filed 2006·Granted Jun 3, 2008·14 cites·19 claims
- 0285US9514942B1Method of forming a gate mask for fabricating a structure of gate linesGLOBALFOUNDRIES INC·Filed 2016·Granted Dec 6, 2016·5 cites·20 claims
- 0372US8524591B2Maintaining integrity of a high-K gate stack by passivation using an oxygen plasmaBEYER SVEN·Filed 2010·Granted Sep 3, 2013·3 cites·22 claims
- 0445US2010025742A1Transistor having a strained channel region caused by hydrogen-induced lattice deformationBEYER SVEN·Filed 2009·Application pending·0 cites
- 0539US8728924B2Gate electrodes of a semiconductor device formed by a hard mask and double exposure in combination with a shrink spacerBEYER SVEN·Filed 2011·Granted May 20, 2014·0 cites·9 claims
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