Inventor · disambiguated record
Jerry Wong
Also filed as: WONG JERRY · WONG JERRY Y · WONG JERRY Y K · WONG JERRY YUEN-JUI
27 granted patents·3 pending applications·3,564 citations·filing 1985–2012
98Inventor score
Files withAPPLIED MATERIALS INC22APPLIED KOMATSU TECHNOLOGY INC2GAMMA PRECISION TECHNOLOGY INC1MTM ENGINEERING INC1SONY CORP1
Top patents by PatentIndex Score
30 records- 0198US4960488AReactor chamber self-cleaning processAPPLIED MATERIALS INC·Filed 1989·Granted Oct 2, 1990·529 cites·16 claims
- 0297US6518195B1Plasma reactor using inductive RF coupling, and processesAPPLIED MATERIALS INC·Filed 2000·Granted Feb 11, 2003·162 cites·8 claims
- 0397US5556501ASilicon scavenger in an inductively coupled RF plasma reactorAPPLIED MATERIALS INC·Filed 1993·Granted Sep 17, 1996·396 cites·15 claims
- 0497US4842683AMagnetic field-enhanced plasma etch reactorAPPLIED MATERIALS INC·Filed 1988·Granted Jun 27, 1989·410 cites·16 claims
- 0596US6488807B1Magnetic confinement in a plasma reactor having an RF bias electrodeAPPLIED MATERIALS INC·Filed 2000·Granted Dec 3, 2002·145 cites·6 claims
- 0695US5888414APlasma reactor and processes using RF inductive coupling and scavenger temperature controlAPPLIED MATERIALS INC·Filed 1997·Granted Mar 30, 1999·203 cites·31 claims
- 0795US5129958ACleaning method for semiconductor wafer processing apparatusAPPLIED MATERIALS INC·Filed 1991·Granted Jul 14, 1992·125 cites·20 claims
- 0894US5158644AReactor chamber self-cleaning processAPPLIED MATERIALS INC·Filed 1991·Granted Oct 27, 1992·222 cites·12 claims
- 0993US6545420B1Plasma reactor using inductive RF coupling, and processesAPPLIED MATERIALS INC·Filed 1995·Granted Apr 8, 2003·135 cites·13 claims
- 1093US6068784AProcess used in an RF coupled plasma reactorAPPLIED MATERIALS INC·Filed 1993·Granted May 30, 2000·173 cites·28 claims
- 1193US5215619AMagnetic field-enhanced plasma etch reactorAPPLIED MATERIALS INC·Filed 1991·Granted Jun 1, 1993·194 cites·25 claims
- 1292US6444137B1Method for processing substrates using gaseous silicon scavengerAPPLIED MATERIALS INC·Filed 1996·Granted Sep 3, 2002·127 cites·19 claims
- 1392US6251792B1Plasma etch processesAPPLIED MATERIALS INC·Filed 1997·Granted Jun 26, 2001·122 cites·18 claims
- 1490US6024826APlasma reactor with heated source of a polymer-hardening precursor materialAPPLIED MATERIALS INC·Filed 1996·Granted Feb 15, 2000·100 cites·68 claims
- 1586US6399514B1High temperature silicon surface providing high selectivity in an oxide etch processAPPLIED MATERIALS INC·Filed 2000·Granted Jun 4, 2002·30 cites·23 claims
- 1686US5176790AProcess for forming a via in an integrated circuit structure by etching through an insulation layer while inhibiting sputtering of underlying metalAPPLIED MATERIALS INC·Filed 1991·Granted Jan 5, 1993·108 cites·49 claims
- 1781US5895549AMethod and apparatus for etching film layers on large substratesAPPLIED KOMATSU TECHNOLOGY INC·Filed 1996·Granted Apr 20, 1999·62 cites·10 claims
- 1880US6020270ABomine and iodine etch process for silicon and silicidesAPPLIED MATERIALS INC·Filed 1998·Granted Feb 1, 2000·47 cites·10 claims
- 1975US5308417AUniformity for magnetically enhanced plasma chambersAPPLIED MATERIALS INC·Filed 1991·Granted May 3, 1994·63 cites·14 claims
- 2074US4613400AIn-situ photoresist capping process for plasma etchingAPPLIED MATERIALS INC·Filed 1985·Granted Sep 23, 1986·43 cites·20 claims
- 2170US5990017APlasma reactor with heated source of a polymer-hardening precursor materialAPPLIED MATERIALS INC·Filed 1998·Granted Nov 23, 1999·32 cites·27 claims
- 2268US5874362ABromine and iodine etch process for silicon and silicidesAPPLIED MATERIALS INC·Filed 1996·Granted Feb 23, 1999·28 cites·10 claims
- 2364US5753133AMethod and apparatus for etching film layers on large substratesAPPLIED KOMATSU TECHNOLOGY INC·Filed 1994·Granted May 19, 1998·36 cites·35 claims
- 2459US5585729AFluid concentration detecting apparatusGAMMA PRECISION TECHNOLOGY INC·Filed 1993·Granted Dec 17, 1996·22 cites·31 claims
- 2556US6171974B1High selectivity oxide etch process for integrated circuit structuresAPPLIED MATERIALS INC·Filed 1992·Granted Jan 9, 2001·23 cites·15 claims
- 2654US2013207109A1Semiconductor device and method for manufacturing a semiconductor deviceWONG JERRY·Filed 2012·Application pending·0 cites
- 2752US6352937B1Method for stripping organic based filmSONY CORP·Filed 1998·Granted Mar 5, 2002·16 cites·18 claims
- 2845US5288645AHydrogen evolution analyzerMTM ENGINEERING INC·Filed 1992·Granted Feb 22, 1994·11 cites·15 claims
- 2937US2012210936A1Systems and methods for mutli-chamber photovoltaic module processingWONG JERRY Y·Filed 2012·Application pending·0 cites
- 3030US2002004309A1Processes used in an inductively coupled plasma reactorFiled 1999·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Jerry Wong files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →