Inventor · disambiguated record
Tokiko Kaji
Also filed as: KAJI TOKIKO
6 granted patents·1 pending application·73 citations·filing 2006–2017
83Inventor score
Technology areasH10P
Top patents by PatentIndex Score
7 records- 0196US7416604B2Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2006·Granted Aug 26, 2008·41 cites·2 claims
- 0293US7854804B2Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2008·Granted Dec 21, 2010·16 cites·4 claims
- 0391US8828140B2Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2013·Granted Sep 9, 2014·7 cites·8 claims
- 0489US8192543B2Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the sameISHIBASHI KEIJI·Filed 2008·Granted Jun 5, 2012·9 cites·3 claims
- 0562US10078059B2Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2017·Granted Sep 18, 2018·0 cites·6 claims
- 0662US9570540B2Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2014·Granted Feb 14, 2017·0 cites·8 claims
- 0760US2010123168A1Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2009·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →