Inventor · disambiguated record
Victor Nguyen
Also filed as: NGUYEN VICTOR · NGUYEN VICTOR T · NGUYEN VICTOR TRINH
19 granted patents·7 pending applications·642 citations·filing 2002–2021
94Inventor score
Files withAPPLIED MATERIALS INC12NGUYEN VICTOR6BALSEANU MIHAELA3MASSACHUSETTS INST TECHNOLOGY2HUH JEONG-UK1
Top patents by PatentIndex Score
26 records- 0198US8138104B2Method to increase silicon nitride tensile stress using nitrogen plasma in-situ treatment and ex-situ UV cureBALSEANU MIHAELA·Filed 2007·Granted Mar 20, 2012·479 cites·18 claims
- 0297US7871926B2Methods and systems for forming at least one dielectric layerAPPLIED MATERIALS INC·Filed 2007·Granted Jan 18, 2011·77 cites·17 claims
- 0392US8148269B2Boron nitride and boron-nitride derived materials deposition methodBALSEANU MIHAELA·Filed 2009·Granted Apr 3, 2012·22 cites·5 claims
- 0491US10023958B2Atomic layer deposition of films comprising silicon, carbon and nitrogen using halogenated silicon precursorsAPPLIED MATERIALS INC·Filed 2014·Granted Jul 17, 2018·4 cites·6 claims
- 0590US9875888B2High temperature silicon oxide atomic layer deposition technologyAPPLIED MATERIALS INC·Filed 2015·Granted Jan 23, 2018·6 cites·6 claims
- 0687US8337950B2Method for depositing boron-rich films for lithographic mask applicationsNGUYEN VICTOR·Filed 2010·Granted Dec 25, 2012·9 cites·17 claims
- 0786US8084105B2Method of depositing boron nitride and boron nitride-derived materialsHUH JEONG-UK·Filed 2007·Granted Dec 27, 2011·8 cites·17 claims
- 0885US8586487B2Low temperature plasma enhanced chemical vapor deposition of conformal silicon carbon nitride and silicon nitride filmsNGUYEN VICTOR·Filed 2012·Granted Nov 19, 2013·7 cites·20 claims
- 0983US7790635B2Method to increase the compressive stress of PECVD dielectric filmsAPPLIED MATERIALS INC·Filed 2006·Granted Sep 7, 2010·8 cites·24 claims
- 1080US9297073B2Accurate film thickness control in gap-fill technologyAPPLIED MATERIALS INC·Filed 2015·Granted Mar 29, 2016·3 cites·20 claims
- 1174US11028478B2Atomic layer deposition of films comprising silicon, carbon and nitrogen using halogenated silicon precursorsAPPLIED MATERIALS INC·Filed 2018·Granted Jun 8, 2021·0 cites·7 claims
- 1274US9984868B2PEALD of films comprising silicon nitrideNGUYEN VICTOR·Filed 2014·Granted May 29, 2018·3 cites·11 claims
- 1373US10170298B2High temperature silicon oxide atomic layer deposition technologyAPPLIED MATERIALS INC·Filed 2017·Granted Jan 1, 2019·1 cites·16 claims
- 1467US11164753B2Self-aligned double patterning with spatial atomic layer depositionAPPLIED MATERIALS INC·Filed 2015·Granted Nov 2, 2021·1 cites·15 claims
- 1566US8758638B2Copper oxide removal techniquesYE WEIFENG·Filed 2011·Granted Jun 24, 2014·3 cites·24 claims
- 1665US12431361B2Self-aligned double patterning with spatial atomic layer depositionAPPLIED MATERIALS INC·Filed 2021·Granted Sep 30, 2025·0 cites·16 claims
- 1765US7407896B2CMOS-compatible light emitting aperiodic photonic structuresMASSACHUSETTS INST TECHNOLOGY·Filed 2005·Granted Aug 5, 2008·2 cites·11 claims
- 1864US7120335B2Vertically and laterally confined 3D optical couplerMASSACHUSETTS INST TECHNOLOGY·Filed 2002·Granted Oct 10, 2006·8 cites·16 claims
- 1963US8598020B2Plasma-enhanced chemical vapor deposition of crystalline germaniumNGUYEN VICTOR·Filed 2010·Granted Dec 3, 2013·1 cites·29 claims
- 2055US2014023794A1Method And Apparatus For Low Temperature ALD DepositionMAHAJANI MAITREYEE·Filed 2013·Application pending·0 cites
- 2148US2012196450A1Method to increase silicon nitride tensile stress using nitrogen plasma in-situ treatment and ex-situ uv cureBALSEANU MIHAELA·Filed 2012·Application pending·0 cites
- 2244US2014273516A1Vbd and tddb improvement thru interface engineeringAPPLIED MATERIALS INC·Filed 2014·Application pending·0 cites
- 2343US2014273524A1Plasma Doping Of Silicon-Containing FilmsNGUYEN VICTOR·Filed 2014·Application pending·0 cites
- 2442US2014273530A1Post-Deposition Treatment Methods For Silicon NitrideNGUYEN VICTOR·Filed 2014·Application pending·0 cites
- 2542US2015252477A1In-situ carbon and oxide doping of atomic layer deposition silicon nitride filmsAPPLIED MATERIALS INC·Filed 2015·Application pending·0 cites
- 2634US2015255324A1Seamless gap-fill with spatial atomic layer depositionAPPLIED MATERIALS INC·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →