Inventor · disambiguated record
Chih-Yang Pai
Also filed as: PAI CHIH-YANG
16 granted patents·5 pending applications·303 citations·filing 2001–2022
94Inventor score
Files withTAIWAN SEMICONDUCTOR MFG12TAIWAN SEMICONDUCTOR MFG CO LTD5PAI CHIH-YANG1TAIWANT SEMICONDUCTOR MFG CO L1TING YU-WEI1
Top patents by PatentIndex Score
21 records- 0193US6566250B1Method for forming a self aligned capping layerTAIWANT SEMICONDUCTOR MFG CO L·Filed 2002·Granted May 20, 2003·110 cites·20 claims
- 0292US8643074B2Semiconductor devicePAI CHIH-YANG·Filed 2012·Granted Feb 4, 2014·17 cites·20 claims
- 0392US6624018B1Method of fabricating a DRAM device featuring alternate fin type capacitor structuresTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Sep 23, 2003·78 cites·27 claims
- 0491US11728375B2Metal-insulator-metal (MIM) capacitor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 15, 2023·1 cites·20 claims
- 0588US8759193B2Method of fabricating semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Jun 24, 2014·6 cites·20 claims
- 0685US9614025B2Method of fabricating semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 4, 2017·3 cites·19 claims
- 0784US9269760B2Method of fabricating semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Feb 23, 2016·3 cites·20 claims
- 0882US11031458B2Metal-insulator-metal (MIM) capacitor structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 8, 2021·2 cites·20 claims
- 0982US6555442B1Method of forming shallow trench isolation with rounded corner and divot-free by using disposable spacerTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Apr 29, 2003·35 cites·37 claims
- 1081US8969937B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Mar 3, 2015·3 cites·20 claims
- 1174US10468478B2Metal-insulator-metal (MIM) capacitor structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 5, 2019·1 cites·20 claims
- 1274US6881622B2Aqueous ammonium hydroxide amorphous silicon etch method for forming microelectronic capacitor structureTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Apr 19, 2005·19 cites·8 claims
- 1372US11362170B2Metal-insulator-metal (MIM) capacitor structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 14, 2022·0 cites·20 claims
- 1466US6670279B1Method of forming shallow trench isolation with rounded corners and divot-free by using in-situ formed spacersTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Dec 30, 2003·14 cites·58 claims
- 1565US7208369B2Dual poly layer and method of manufactureTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Apr 24, 2007·11 cites·10 claims
- 1647US9082705B2Method of forming an embedded memory deviceTING YU-WEI·Filed 2012·Granted Jul 14, 2015·0 cites·19 claims
- 1747US2015318292A1Method of Forming an Embedded Memory DeviceTAIWAN SEMICONDUCTOR MFG·Filed 2015·Application pending·0 cites
- 1844US2008217775A1Method of forming contact plugs for eliminating tungsten seam issueTAIWAN SEMICONDUCTOR MFG·Filed 2007·Application pending·0 cites
- 1942US2009051034A1Semiconductor device and method for the sameTAIWAN SEMICONDUCTOR MFG·Filed 2007·Application pending·0 cites
- 2041US2008116496A1Integrating a DRAM with an SRAM having butted contacts and resulting devicesTZENG KUO-CHYUAN·Filed 2007·Application pending·0 cites
- 2141US2005164449A1Microelectronic capacitor structure and method for fabrication thereofTAIWAN SEMICONDUCTOR MFG·Filed 2005·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →