Inventor · disambiguated record
Behnam Moradi
Also filed as: MORADI BEHNAM
40 granted patents·3 pending applications·316 citations·filing 1995–2013
98Inventor score
Top patents by PatentIndex Score
43 records- 0186US5880502ALow and high voltage CMOS devices and process for fabricating sameMICRON DISPLAY TECH INC·Filed 1996·Granted Mar 9, 1999·50 cites·14 claims
- 0285US7824994B2Method of forming memory devices by performing halogen ion implantation and diffusion processesMICRON TECHNOLOGY INC·Filed 2008·Granted Nov 2, 2010·6 cites·24 claims
- 0382US8580645B2Memory devices and methods of forming memory devicesMICRON TECHNOLOGY INC·Filed 2013·Granted Nov 12, 2013·3 cites·12 claims
- 0482US5656886ATechnique to improve uniformity of large area field emission displaysMICRON DISPLAY TECH INC·Filed 1995·Granted Aug 12, 1997·38 cites·24 claims
- 0581US6015323AField emission display cathode assembly government rightsMICRON TECHNOLOGY INC·Filed 1997·Granted Jan 18, 2000·28 cites·39 claims
- 0676US6515414B1Low work function emitters and method for production of fed'sMICRON TECHNOLOGY INC·Filed 2000·Granted Feb 4, 2003·8 cites·16 claims
- 0775US6028322ADouble field oxide in field emission display and methodMICRON TECHNOLOGY INC·Filed 1998·Granted Feb 22, 2000·27 cites·33 claims
- 0873US6583441B2Capacitor constructions comprising a nitrogen-containing layer over a rugged polysilicon layerMICRON TECHNOLOGY INC·Filed 2001·Granted Jun 24, 2003·11 cites·15 claims
- 0971US6692323B1Structure and method to enhance field emission in field emitter deviceMICRON TECHNOLOGY INC·Filed 2000·Granted Feb 17, 2004·8 cites·43 claims
- 1070US5956611AField emission displays with reduced light leakageMICRON TECHNOLOGIES INC·Filed 1997·Granted Sep 21, 1999·14 cites·6 claims
- 1170US5772488AMethod of forming a doped field emitter arrayMICRON DISPLAY TECH INC·Filed 1995·Granted Jun 30, 1998·15 cites·14 claims
- 1269US6096589ALow and high voltage CMOS devices and process for fabricating sameMICRON TECHNOLOGY INC·Filed 1998·Granted Aug 1, 2000·21 cites·23 claims
- 1368US6417617B2Titanium silicide nitride emitters and methodMICRON TECHNOLOGY INC·Filed 2001·Granted Jul 9, 2002·5 cites·9 claims
- 1468US6228667B1Field emission displays with reduced light leakageMICRON TECHNOLOGY INC·Filed 2000·Granted May 8, 2001·4 cites·4 claims
- 1567US6323587B1Titanium silicide nitride emitters and methodMICRON TECHNOLOGY INC·Filed 1998·Granted Nov 27, 2001·14 cites·13 claims
- 1665US6607965B2Methods of forming capacitorsMICRON TECHNOLOGY INC·Filed 2001·Granted Aug 19, 2003·7 cites·20 claims
- 1765US6353285B1Field emission display having reduced optical sensitivity and methodMICRON TECHNOLOGY INC·Filed 2000·Granted Mar 5, 2002·4 cites·14 claims
- 1862US6271632B1Field emission display having reduced optical sensitivity and methodMICRON TECHNOLOGY INC·Filed 2000·Granted Aug 7, 2001·3 cites·6 claims
- 1959US8729621B2Memory devices comprising word line structures, at least one select gate structure, and a plurality of doped regionsMICRON TECHNOLOGY INC·Filed 2013·Granted May 20, 2014·0 cites·15 claims
- 2059US6181308B1Light-insensitive resistor for current-limiting of field emission displaysMICRON TECHNOLOGY INC·Filed 1996·Granted Jan 30, 2001·11 cites·33 claims
- 2156US6507329B2Light-insensitive resistor for current-limiting of field emission displaysMICRON TECHNOLOGY INC·Filed 2001·Granted Jan 14, 2003·2 cites·13 claims
- 2255US6361392B2Extraction grid for field emission displays and methodMICRON TECHNOLOGY INC·Filed 2001·Granted Mar 26, 2002·2 cites·8 claims
- 2354US8415223B2Memory devices and methods of forming memory devicesPRALL KIRK D·Filed 2012·Granted Apr 9, 2013·0 cites·31 claims
- 2454US7485528B2Method of forming memory devices by performing halogen ion implantation and diffusion processesMICRON TECHNOLOGY INC·Filed 2006·Granted Feb 3, 2009·0 cites·15 claims
- 2554US6362038B1Low and high voltage CMOS devices and process for fabricating sameMICRON TECHNOLOGY INC·Filed 2000·Granted Mar 26, 2002·4 cites·20 claims
- 2654US6278229B1Field emission displays having a light-blocking layer in the extraction gridMICRON TECHNOLOGY INC·Filed 1998·Granted Aug 21, 2001·9 cites·39 claims
- 2752US8129781B2Method of forming memory devices by performing halogen ion implantation and diffusion processesPRALL KIRK D·Filed 2010·Granted Mar 6, 2012·0 cites·7 claims
- 2852US6057638ALow work function emitters and method for production of FED'sMICRON TECHNOLOGY INC·Filed 1998·Granted May 2, 2000·6 cites·9 claims
- 2951US6471561B2Titanium silicide nitride emitters and methodMICRON TECHNOLOGY INC·Filed 2001·Granted Oct 29, 2002·1 cites·17 claims
- 3048US6436788B1Field emission display having reduced optical sensitivity and methodMICRON TECHNOLOGY INC·Filed 1998·Granted Aug 20, 2002·5 cites·12 claims
- 3147US6509686B1Field emission display cathode assembly with gate buffer layerMICRON TECHNOLOGY INC·Filed 1999·Granted Jan 21, 2003·5 cites·16 claims
- 3245US6831403B2Field emission display cathode assemblyMICRON TECHNOLOGY INC·Filed 2002·Granted Dec 14, 2004·0 cites·19 claims
- 3344US6518699B2Field emission display having reduced optical sensitivity and methodMICRON TECHNOLOGY INC·Filed 2001·Granted Feb 11, 2003·0 cites·20 claims
- 3443US7492086B1Low work function emitters and method for production of FED'sMICRON TECHNOLOGY INC·Filed 2000·Granted Feb 17, 2009·0 cites·7 claims
- 3543US6791113B2Capacitor constructions comprising a nitrogen-containing layer over a rugged polysilicon layerMICRON TECHNOLOGY INC·Filed 2003·Granted Sep 14, 2004·0 cites·11 claims
- 3643US2004104658A1Structure and method to enhance field emission in field emitter deviceMICRON TECHNOLOGY INC·Filed 2003·Application pending·0 cites
- 3741US6562684B1Methods of forming dielectric materialsMICRON TECHNOLOGY INC·Filed 2000·Granted May 13, 2003·0 cites·15 claims
- 3837US2001045794A1Cap layer on glass panels for improving tip uniformity in cold cathode field emission technologyFiled 2001·Application pending·0 cites
- 3936US6930446B1Method for improving current stability of field emission displaysMICRON TECHNOLOGY INC·Filed 1999·Granted Aug 16, 2005·2 cites·23 claims
- 4035US6133056AField emission displays with reduced light leakageMICRON TECHNOLOGY INC·Filed 1999·Granted Oct 17, 2000·1 cites·16 claims
- 4135US6064075AField emission displays with reduced light leakage having an extractor covered with a silicide nitride formed at a temperature above 1000° C.MICRON TECHNOLOGY INC·Filed 1998·Granted May 16, 2000·1 cites·3 claims
- 4235US6024620AField emission displays with reduced light leakageMICRON TECHNOLOGY INC·Filed 1998·Granted Feb 15, 2000·1 cites·6 claims
- 4334US2006278913A1Non-volatile memory cells without diffusion junctionsMICRON TECHNOLOGY INC·Filed 2005·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →