Inventor · disambiguated record
Toshiyuki Toyoshima
Also filed as: TOYOSHIMA TOSHIYUKI
11 granted patents·7 pending applications·729 citations·filing 1997–2021
92Inventor score
Top patents by PatentIndex Score
18 records- 0197US6319853B1Method of manufacturing a semiconductor device using a minute resist pattern, and a semiconductor device manufactured therebyMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Nov 20, 2001·136 cites·20 claims
- 0295US5858620ASemiconductor device and method for manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Jan 12, 1999·267 cites·31 claims
- 0393US6579657B1Material for forming a fine pattern and method for manufacturing a semiconductor device using the sameMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Jun 17, 2003·169 cites·6 claims
- 0486US6568996B2Polishing agent for processing semiconductor, dispersant used therefor and process for preparing semiconductor device using above polishing agent for processing semiconductorMITSUBISHI ELECTRIC CORP·Filed 2001·Granted May 27, 2003·38 cites·8 claims
- 0584US6924240B2Low dielectric constant material, insulating film comprising the low dielectric constant material, and semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2002·Granted Aug 2, 2005·24 cites·18 claims
- 0683US6180320B1Method of manufacturing a semiconductor device having a fine pattern, and semiconductor device manufactured therebyMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Jan 30, 2001·70 cites·17 claims
- 0772US6774314B2Electronic device and couplerMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Aug 10, 2004·16 cites·11 claims
- 0854US2023417018A1Control device, control system, and control methodNEC CORP·Filed 2021·Application pending·0 cites
- 0953US8674046B2Source material for preparing low dielectric constant materialNOBUTOKI HIDEHARU·Filed 2009·Granted Mar 18, 2014·0 cites·2 claims
- 1051US7030007B2Via-filling material and process for fabricating semiconductor integrated circuit using the materialMITSUBISHI ELECTRIC CORP·Filed 2003·Granted Apr 18, 2006·3 cites·6 claims
- 1150US6699748B2Method of fabricating capacitor having a photosensitive resin layer as a dielectricMITSUBISHI ELECTRIC CORP·Filed 2002·Granted Mar 2, 2004·4 cites·8 claims
- 1249US2005181628A1Process for preparing low dielectric constant materialMITSUBISHI ELECTRIC CORP·Filed 2005·Application pending·0 cites
- 1348US2006246380A1Micropattern forming material and method for forming micropatternRENESAS TECH CORP·Filed 2006·Application pending·0 cites
- 1446US7100275B2Method of producing a multi-layered wiring boardMITSUBISHI ELECTRIC CORP·Filed 2004·Granted Sep 5, 2006·2 cites·6 claims
- 1541US2004072096A1Micropattern forming material and fine structure forming methodRENESAS TECH CORP·Filed 2003·Application pending·0 cites
- 1638US2004018646A1Resist pattern formation methodMITSUBISHI ELECTRIC CORP·Filed 2003·Application pending·0 cites
- 1737US2004029047A1Micropattern forming material, micropattern forming method and method for manufacturing semiconductor deviceRENESAS TECH CORP·Filed 2003·Application pending·0 cites
- 1836US2001025414A1Method of producing a multi-layered wiring boardFiled 2000·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Toshiyuki Toyoshima files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →