Process for preparing low dielectric constant material

Abstract

A process for preparing a low dielectric constant material comprising heat-treating a compound containing a borazine skeleton structure of the formula: wherein at least one of R 1 to R 6 is a bond which binds said borazine skeleton structure to a molecule of a inorganic or organic compound, and/or R 1 to R 6 are independently a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, an aryl group, a substituted aryl group, an alkenyl group, an amino group, an alkylamino group, an alkoxyl group, a thioalkoxyl group, a carbonyl group, a silyl group, an alkylsilyl group, a phosphino group, an alkylphosphino group or a group of the formula: Si(OR 7 )(OR 8 )(OR 9 ), and at least one of R 1 to R 6 is not a hydrogen atom.

1 . A process for preparing a low dielectric constant material comprising heat-treating an inorganic or organic compound containing in its molecule a borazine skeleton structure of the formula (1-1):  
     
       
         
         
             
             
         
       
     
     wherein at least one of R 1  to R 6  is a bond which binds said borazine skeleton structure to a molecule of said inorganic or organic compound, and R 1  to R 6,  other than said bond, are independently a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, an aryl group, a substituted aryl group, an alkenyl group, an amino group, an alkylamino group, an alkoxyl group, a thioalkoxyl group, a carbonyl group, a silyl group, an alkylsilyl group, a phosphino group, an alkylphosphino group or a group of the formula: Si(OR 7 )(OR 8 )(OR 9 ) in which R 7  to R 9  are independently a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, an aryl group, a substituted aryl group, an alkenyl group, an amino group, an alkylamino group, an alkoxyl group, a thioalkoxyl group, a carbonyl group, a silyl group, an alkylsilyl group, a phosphino group or an alkylphosphino group, provided that at least one of R 1  to R 6,  other than said bond, is not a hydrogen atom.  
   
   
       2 . A process for preparing a low dielectric constant material comprising heat-treating a borazine skeleton-containing compound of the formula (1-2):  
     
       
         
         
             
             
         
       
     
     wherein R 1  to R 6  are independently a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, an aryl group, a substituted aryl group, an alkenyl group, an amino group, an alkylamino group, an alkoxyl group, a thioalkoxyl group, a carbonyl group, a silyl group, an alkylsilyl group, a phosphino group, an alkylphosphino group, or a group of the formula: Si(OR 7 )(OR 8 )(OR 9 ) in which R 7  to R 9  are independently a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, an aryl group, a substituted aryl group, an alkenyl group, an amino group, an alkylamino group, an alkoxyl group, a thioalkoxyl group, a carbonyl group, a silyl group, an alkylsilyl group, a phosphino group or an alkylphosphino group, and at least one of R 1  to R 6  is not a hydrogen atom.  
   
   
       3 - 20 . (canceled)