Inventor · disambiguated record
Jamal Ramdani
Also filed as: RAMDANI JAMAL
101 granted patents·27 pending applications·4,002 citations·filing 1995–2023
99Inventor score
Files withMOTOROLA INC65POWER INTEGRATIONS INC29NAT SEMICONDUCTOR CORP17RAMDANI JAMAL7FREESCALE SEMICONDUCTOR INC3
Top patents by PatentIndex Score
128 records- 0199US6709989B2Method for fabricating a semiconductor structure including a metal oxide interface with siliconMOTOROLA INC·Filed 2001·Granted Mar 23, 2004·686 cites·6 claims
- 0299US6080690ATextile fabric with integrated sensing device and clothing fabricated thereofMOTOROLA INC·Filed 1998·Granted Jun 27, 2000·404 cites·20 claims
- 0398US6501121B1Semiconductor structureMOTOROLA INC·Filed 2000·Granted Dec 31, 2002·232 cites·22 claims
- 0498US6493497B1Electro-optic structure and process for fabricating sameMOTOROLA INC·Filed 2000·Granted Dec 10, 2002·238 cites·45 claims
- 0597US9722063B1Protective insulator for HFET devicesPOWER INTEGRATIONS INC·Filed 2016·Granted Aug 1, 2017·27 cites·27 claims
- 0697US9306014B1High-electron-mobility transistorsPOWER INTEGRATIONS INC·Filed 2014·Granted Apr 5, 2016·34 cites·26 claims
- 0796US5741724AMethod of growing gallium nitride on a spinel substrateMOTOROLA INC·Filed 1996·Granted Apr 21, 1998·245 cites·22 claims
- 0895US8785305B2Backside stress compensation for gallium nitride or other nitride-based semiconductor devicesRAMDANI JAMAL·Filed 2010·Granted Jul 22, 2014·20 cites·20 claims
- 0995US8633094B2GaN high voltage HFET with passivation plus gate dielectric multilayer structureRAMDANI JAMAL·Filed 2011·Granted Jan 21, 2014·29 cites·23 claims
- 1095US7687887B1Method of forming a self-aligned bipolar transistor structure using a selectively grown emitterNAT SEMICONDUCTOR CORP·Filed 2006·Granted Mar 30, 2010·39 cites·20 claims
- 1195US6392257B1Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the sameMOTOROLA INC·Filed 2000·Granted May 21, 2002·165 cites·6 claims
- 1294US6291319B1Method for fabricating a semiconductor structure having a stable crystalline interface with siliconMOTOROLA INC·Filed 1999·Granted Sep 18, 2001·148 cites·40 claims
- 1392US8507947B2High quality GaN high-voltage HFETS on siliconRAMDANI JAMAL·Filed 2011·Granted Aug 13, 2013·12 cites·9 claims
- 1492US6583034B2Semiconductor structure including a compliant substrate having a graded monocrystalline layer and methods for fabricating the structure and semiconductor devices including the structureMOTOROLA INC·Filed 2000·Granted Jun 24, 2003·74 cites·7 claims
- 1591US8928037B2Heterostructure power transistor with AlSiN passivation layerPOWER INTEGRATIONS INC·Filed 2013·Granted Jan 6, 2015·10 cites·23 claims
- 1691US6555946B1Acoustic wave device and process for forming the sameMOTOROLA INC·Filed 2000·Granted Apr 29, 2003·54 cites·26 claims
- 1790US7211852B2Structure and method for fabricating GaN devices utilizing the formation of a compliant substrateFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted May 1, 2007·14 cites·20 claims
- 1889US11373873B2Asymmetrical plug technique for GaN devicesPOWER INTEGRATIONS INC·Filed 2020·Granted Jun 28, 2022·2 cites·19 claims
- 1988US10204791B1Contact plug for high-voltage devicesPOWER INTEGRATIONS INC·Filed 2017·Granted Feb 12, 2019·4 cites·12 claims
- 2088US10121885B2Protective insulator for HFET devicesPOWER INTEGRATIONS INC·Filed 2017·Granted Nov 6, 2018·3 cites·17 claims
- 2188US9543402B1Integrated high performance lateral schottky diodePOWER INTEGRATIONS INC·Filed 2015·Granted Jan 10, 2017·6 cites·14 claims
- 2288US7067856B2Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the sameFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted Jun 27, 2006·26 cites·9 claims
- 2388US6319730B1Method of fabricating a semiconductor structure including a metal oxide interfaceMOTOROLA INC·Filed 1999·Granted Nov 20, 2001·94 cites·23 claims
- 2488US6026111AVertical cavity surface emitting laser device having an extended cavityMOTOROLA INC·Filed 1997·Granted Feb 15, 2000·73 cites·25 claims
- 2588US5943357ALong wavelength vertical cavity surface emitting laser with photodetector for automatic power control and method of fabricationMOTOROLA INC·Filed 1997·Granted Aug 24, 1999·72 cites·25 claims
- 2688US5903586ALong wavelength vertical cavity surface emitting laserMOTOROLA INC·Filed 1997·Granted May 11, 1999·77 cites·15 claims
- 2788US5835521ALong wavelength light emitting vertical cavity surface emitting laser and method of fabricationMOTOROLA INC·Filed 1997·Granted Nov 10, 1998·65 cites·18 claims
- 2887US10665463B2Asymmetrical plug technique for GaN devicesPOWER INTEGRATIONS INC·Filed 2018·Granted May 26, 2020·3 cites·10 claims
- 2987US9691755B2Static discharge systemPOWER INTEGRATIONS INC·Filed 2016·Granted Jun 27, 2017·4 cites·14 claims
- 3087US6121068ALong wavelength light emitting vertical cavity surface emitting laser and method of fabricationMOTOROLA INC·Filed 1998·Granted Sep 19, 2000·59 cites·10 claims
- 3186US6241821B1Method for fabricating a semiconductor structure having a crystalline alkaline earth metal oxide interface with siliconMOTOROLA INC·Filed 1999·Granted Jun 5, 2001·45 cites·22 claims
- 3286US5838707AUltraviolet/visible light emitting vertical cavity surface emitting laser and method of fabricationMOTOROLA INC·Filed 1996·Granted Nov 17, 1998·67 cites·30 claims
- 3385US8703561B2High quality GaN high-voltage HFETs on siliconPOWER INTEGRATIONS INC·Filed 2013·Granted Apr 22, 2014·4 cites·13 claims
- 3485US6224669B1Method for fabricating a semiconductor structure having a crystalline alkaline earth metal oxide interface with siliconMOTOROLA INC·Filed 2000·Granted May 1, 2001·35 cites·36 claims
- 3584US11075294B2Protective insulator for HFET devicesPOWER INTEGRATIONS INC·Filed 2020·Granted Jul 27, 2021·1 cites·14 claims
- 3684US10629719B2Protective insulator for HFET devicesPOWER INTEGRATIONS INC·Filed 2018·Granted Apr 21, 2020·2 cites·8 claims
- 3784US9425195B2Static discharge systemPOWER INTEGRATIONS INC·Filed 2015·Granted Aug 23, 2016·3 cites·24 claims
- 3884US9245879B2Static discharge systemKUDYMOV ALEXEY·Filed 2012·Granted Jan 26, 2016·6 cites·24 claims
- 3984US6061380AVertical cavity surface emitting laser with doped active region and method of fabricationMOTOROLA INC·Filed 1997·Granted May 9, 2000·58 cites·27 claims
- 4084US5898722ADual wavelength monolithically integrated vertical cavity surface emitting lasers and method of fabricationMOTOROLA INC·Filed 1997·Granted Apr 27, 1999·57 cites·16 claims
- 4184US2024030337A1Protective insulator for hfet devicesPOWER INTEGRATIONS INC·Filed 2023·Application pending·0 cites
- 4283US8940620B2Composite wafer for fabrication of semiconductor devicesKOUDYMOV ALEXEI·Filed 2011·Granted Jan 27, 2015·9 cites·14 claims
- 4383US8624260B2Enhancement-mode GaN MOSFET with low leakage current and improved reliabilityRAMDANI JAMAL·Filed 2010·Granted Jan 7, 2014·5 cites·20 claims
- 4483US5732103ALong wavelength VCSELMOTOROLA INC·Filed 1996·Granted Mar 24, 1998·52 cites·24 claims
- 4582US5956363ALong wavelength vertical cavity surface emitting laser with oxidation layers and method of fabricationMOTOROLA INC·Filed 1997·Granted Sep 21, 1999·53 cites·15 claims
- 4681US7105866B2Heterojunction tunneling diodes and process for fabricating sameFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted Sep 12, 2006·24 cites·8 claims
- 4780US7566626B1System and method for providing a fully self aligned bipolar transistor using modified cavity formation to optimize selective epitaxial growthNAT SEMICONDUCTOR CORP·Filed 2007·Granted Jul 28, 2009·7 cites·20 claims
- 4879US5943359ALong wavelength VCSELMOTOROLA INC·Filed 1997·Granted Aug 24, 1999·45 cites·15 claims
- 4978US9525055B2High-electron-mobility transistorsPOWER INTEGRATIONS INC·Filed 2016·Granted Dec 20, 2016·2 cites·13 claims
- 5078US7485538B1High performance SiGe HBT with arsenic atomic layer dopingNAT SEMICONDUCTOR CORP·Filed 2006·Granted Feb 3, 2009·6 cites·21 claims
Showing the top 50 of 128 patent records by PatentIndex Score.
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