Assignee
RAMDANI JAMAL
US6 patents
Top patents by PatentIndex Score
US8785305B2Jul 22, 2014
Backside stress compensation for gallium nitride or other nitride-based semiconductor devices
RAMDANI JAMAL20 citations92
US8633094B2Jan 21, 2014
GaN high voltage HFET with passivation plus gate dielectric multilayer structure
RAMDANI JAMAL29 citations90
US8507947B2Aug 13, 2013
High quality GaN high-voltage HFETS on silicon
RAMDANI JAMAL12 citations90
US8624260B2Jan 7, 2014
Enhancement-mode GaN MOSFET with low leakage current and improved reliability
RAMDANI JAMAL5 citations73
US8802516B2Aug 12, 2014
Normally-off gallium nitride-based semiconductor devices
RAMDANI JAMAL0 citations52
US8723296B2May 13, 2014
Stress compensation for large area gallium nitride or other nitride-based structures on semiconductor substrates
RAMDANI JAMAL1 citations52