Inventor · disambiguated record
Petri Raisanen
Also filed as: RAEISAENEN PETRI · RAISANEN PETRI · RAISANEN PETRI I · RÄISÄNEN PETRI
58 granted patents·15 pending applications·7,115 citations·filing 2002–2025
99Inventor score
Top patents by PatentIndex Score
73 records- 0198US10734497B2Methods for forming a semiconductor device structure and related semiconductor device structuresASM IP HOLDING BV·Filed 2018·Granted Aug 4, 2020·279 cites·20 claims
- 0298US10229833B2Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structuresASM IP HOLDING BV·Filed 2017·Granted Mar 12, 2019·413 cites·20 claims
- 0398US10087522B2Deposition of metal boridesASM IP HOLDING BV·Filed 2016·Granted Oct 2, 2018·464 cites·21 claims
- 0498US9905492B2System and method for gas-phase passivation of a semiconductor surfaceASM IP HOLDING BV·Filed 2017·Granted Feb 27, 2018·361 cites·10 claims
- 0598US9558931B2System and method for gas-phase sulfur passivation of a semiconductor surfaceASM IP HOLDING BV·Filed 2013·Granted Jan 31, 2017·478 cites·14 claims
- 0698US9177784B2Semiconductor device dielectric interface layerASM IP HOLDING BV·Filed 2014·Granted Nov 3, 2015·502 cites·20 claims
- 0798US8883270B2Systems and methods for thin-film deposition of metal oxides using excited nitrogen—oxygen speciesSHERO ERIC·Filed 2010·Granted Nov 11, 2014·544 cites·22 claims
- 0897US9911676B2System and method for gas-phase passivation of a semiconductor surfaceASM IP HOLDING BV·Filed 2017·Granted Mar 6, 2018·464 cites·20 claims
- 0997US8877655B2Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen speciesSHERO ERIC J·Filed 2011·Granted Nov 4, 2014·551 cites·25 claims
- 1097US8728832B2Semiconductor device dielectric interface layerRAISANEN PETRI·Filed 2012·Granted May 20, 2014·541 cites·20 claims
- 1197US8071452B2Atomic layer deposition of hafnium lanthanum oxidesRAISANEN PETRI I·Filed 2009·Granted Dec 6, 2011·549 cites·47 claims
- 1296US10643904B2Methods for forming a semiconductor device and related semiconductor device structuresASM IP HOLDING BV·Filed 2017·Granted May 5, 2020·19 cites·20 claims
- 1396US9790595B2Method and system to reduce outgassing in a reaction chamberASM IP HOLDING BV·Filed 2015·Granted Oct 17, 2017·471 cites·22 claims
- 1496US8993054B2Method and system to reduce outgassing in a reaction chamberASM IP HOLDING BV·Filed 2013·Granted Mar 31, 2015·531 cites·11 claims
- 1596US8383525B2Plasma-enhanced deposition process for forming a metal oxide thin film and related structuresASM INC·Filed 2008·Granted Feb 26, 2013·84 cites·26 claims
- 1696US6858546B2Method of depositing rare earth oxide thin filmsASM INTERNATIONAL NV·Filed 2002·Granted Feb 22, 2005·120 cites·22 claims
- 1795US7608549B2Method of forming non-conformal layersASM INC·Filed 2006·Granted Oct 27, 2009·40 cites·26 claims
- 1894US9461134B1Method for forming source/drain contact structure with chalcogen passivationASM IP HOLDING BV·Filed 2015·Granted Oct 4, 2016·12 cites·23 claims
- 1994US8802201B2Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen speciesRAISANEN PETRI·Filed 2011·Granted Aug 12, 2014·539 cites·19 claims
- 2093US9981286B2Selective formation of metal silicidesASM IP HOLDING BV·Filed 2016·Granted May 29, 2018·11 cites·21 claims
- 2193US8334218B2Method of forming non-conformal layersVAN NOOTEN SEBASTIAN E·Filed 2009·Granted Dec 18, 2012·58 cites·15 claims
- 2293US7498272B2Method of depositing rare earth oxide thin filmsASM INT·Filed 2004·Granted Mar 3, 2009·47 cites·24 claims
- 2392US11473195B2Semiconductor processing apparatus and a method for processing a substrateASM IP HOLDING BV·Filed 2018·Granted Oct 18, 2022·4 cites·12 claims
- 2489US10002936B2Titanium aluminum and tantalum aluminum thin filmsASM IP HOLDING BV·Filed 2015·Granted Jun 19, 2018·4 cites·22 claims
- 2588US2025081588A1Methods for forming a semiconductor device structure and related semiconductor device structuresASM IP HOLDING BV·Filed 2024·Application pending·0 cites
- 2686US10872771B2Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structuresASM IP HOLDING BV·Filed 2019·Granted Dec 22, 2020·4 cites·16 claims
- 2785US12166099B2Methods for forming a semiconductor device structure and related semiconductor device structuresASM IP HOLDING BV·Filed 2023·Granted Dec 10, 2024·0 cites·18 claims
- 2885US11164955B2Methods for forming a semiconductor device structure and related semiconductor device structuresASM IP HOLDING BV·Filed 2020·Granted Nov 2, 2021·1 cites·20 claims
- 2984US11056567B2Method of forming a doped metal carbide film on a substrate and related semiconductor device structuresASM IP HOLDING BV·Filed 2019·Granted Jul 6, 2021·3 cites·29 claims
- 3082US10804098B2Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen speciesASM IP HOLDING BV·Filed 2014·Granted Oct 13, 2020·6 cites·12 claims
- 3181US11430656B2Deposition of oxide thin filmsASM IP HOLDING BV·Filed 2016·Granted Aug 30, 2022·2 cites·21 claims
- 3281US10720331B2Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structuresASM IP HOLDING BV·Filed 2019·Granted Jul 21, 2020·2 cites·20 claims
- 3381US2025037995A1Deposition of oxide thin filmsASM IP HOLDING BV·Filed 2024·Application pending·0 cites
- 3480US10847371B2Method of forming an electrode on a substrate and a semiconductor device structure including an electrodeASM IP HOLDING BV·Filed 2019·Granted Nov 24, 2020·2 cites·14 claims
- 3578US12018365B2Semiconductor processing apparatus and a method for processing a substrateASM IP HOLDING BV·Filed 2022·Granted Jun 25, 2024·0 cites·16 claims
- 3678US10636889B2Titanium aluminum and tantalum aluminum thin filmsASM IP HOLDING BV·Filed 2018·Granted Apr 28, 2020·1 cites·20 claims
- 3777US12237392B2Titanium aluminum and tantalum aluminum thin filmsASM IP HOLDING BV·Filed 2021·Granted Feb 25, 2025·0 cites·16 claims
- 3877US12154785B2Deposition of oxide thin filmsASM IP HOLDING BV·Filed 2022·Granted Nov 26, 2024·0 cites·14 claims
- 3977US11695054B2Methods for forming a semiconductor device structure and related semiconductor device structuresASM IP HOLDING BV·Filed 2021·Granted Jul 4, 2023·0 cites·20 claims
- 4077US10829852B2Gas distribution device for a wafer processing apparatusASM IP HOLDING BV·Filed 2018·Granted Nov 10, 2020·2 cites·16 claims
- 4177US2025176248A1Titanium aluminum and tantalum aluminum thin filmsASM IP HOLDING BV·Filed 2025·Application pending·0 cites
- 4275US10865475B2Deposition of metal borides and silicidesASM IP HOLDING BV·Filed 2016·Granted Dec 15, 2020·2 cites·21 claims
- 4374US11926895B2Structures including metal carbide material, devices including the structures, and methods of forming sameASM IP HOLDING BV·Filed 2022·Granted Mar 12, 2024·0 cites·13 claims
- 4474US2024395555A1Method of forming chromium nitride layer and structure including the chromium nitride layerASM IP HOLDING BV·Filed 2024·Application pending·0 cites
- 4573US12020938B2Method of forming an electrode on a substrate and a semiconductor device structure including an electrodeASM IP HOLDING BV·Filed 2022·Granted Jun 25, 2024·0 cites·20 claims
- 4673US11139383B2Titanium aluminum and tantalum aluminum thin filmsASM IP HOLDING BV·Filed 2020·Granted Oct 5, 2021·0 cites·20 claims
- 4771US9385164B2Method of making a resistive random access memory device with metal-doped resistive switching layerASM IP HOLDING BV·Filed 2014·Granted Jul 5, 2016·4 cites·6 claims
- 4869US2025092519A1Methods and system for mitigating cvd foreline growthASM IP HOLDING BV·Filed 2024·Application pending·0 cites
- 4967US12087586B2Method of forming chromium nitride layer and structure including the chromium nitride layerASM IP HOLDING BV·Filed 2021·Granted Sep 10, 2024·0 cites·26 claims
- 5066US11837483B2Wafer handling chamber with moisture reductionASM IP HOLDING BV·Filed 2022·Granted Dec 5, 2023·0 cites·20 claims
Showing the top 50 of 73 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →