Inventor · disambiguated record
Thomas Schafbauer
Also filed as: SCHAFBAUER THOMAS
11 granted patents·4 pending applications·114 citations·filing 1998–2013
90Inventor score
Top patents by PatentIndex Score
15 records- 0182US7071074B2Structure and method for placement, sizing and shaping of dummy structuresINFINEON TECHNOLOGIES AG·Filed 2003·Granted Jul 4, 2006·19 cites·20 claims
- 0278US6815317B2Method to perform deep implants without scattering to adjacent areasIBM·Filed 2002·Granted Nov 9, 2004·26 cites·21 claims
- 0377US7615440B2Capacitor and method of manufacturing a capacitorINFINEON TECHNOLOGIES AG·Filed 2007·Granted Nov 10, 2009·7 cites·21 claims
- 0475US7868427B2Structure and method for placement, sizing and shaping of dummy structuresINFINEON TECHNOLOGIES AG·Filed 2009·Granted Jan 11, 2011·3 cites·21 claims
- 0570US7494930B2Structure and method for placement, sizing and shaping of dummy structuresINFINEON TECHNOLOGIES AG·Filed 2006·Granted Feb 24, 2009·2 cites·6 claims
- 0659US6828647B2Structure for determining edges of regions in a semiconductor waferINFINEON TECHNOLOGIES AG·Filed 2001·Granted Dec 7, 2004·8 cites·4 claims
- 0756US8921166B2Structure and method for placement, sizing and shaping of dummy structuresINFINEON TECHNOLOGIES AG·Filed 2013·Granted Dec 30, 2014·0 cites·21 claims
- 0854US6472301B1Method and structure for shallow trench isolationINFINEON TECHNOLOGIES AG·Filed 1999·Granted Oct 29, 2002·21 cites·33 claims
- 0952US5998767AApparatus for processing a substrate wafer and method for operating sameSIEMENS AG·Filed 1998·Granted Dec 7, 1999·18 cites·10 claims
- 1051US2011133304A1Structure and Method for Placement, Sizing and Shaping of Dummy StructuresINFINEON TECHNOLOGIES AG·Filed 2010·Application pending·0 cites
- 1148US7268383B2Capacitor and method of manufacturing a capacitorINFINEON TECHNOLOGIES AG·Filed 2003·Granted Sep 11, 2007·3 cites·19 claims
- 1237US6750122B1Semiconductor device formed with an oxygen implant stepINFINEON TECHNOLOGIES AG·Filed 1999·Granted Jun 15, 2004·7 cites·26 claims
- 1337US2005263817A1Transistor comprising fill areas in the source drain and/or drain regionWENDEL MARTIN·Filed 2005·Application pending·0 cites
- 1435US2004053439A1Method for producing low-resistance ohmic contacts between substrates and wells in CMOS integrated circuitsINFINEON TECHNOLOGIES CORP·Filed 2002·Application pending·0 cites
- 1530US2003166323A1Raised extension structure for high performance cmosINFINEON TECHNOLOGIES CORP·Filed 2002·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →