Inventor · disambiguated record
Gonzalo Monroy
Also filed as: MONROY GONZALO A · MONROY GONZALO ANTONIO · MONROY Gonzalo
15 granted patents·7 pending applications·390 citations·filing 2002–2023
94Inventor score
Top patents by PatentIndex Score
22 records- 0198US11651966B2Methods and apparatus for processing a substrateAPPLIED MATERIALS INC·Filed 2021·Granted May 16, 2023·6 cites·9 claims
- 0297US10707086B2Etching methodsAPPLIED MATERIALS INC·Filed 2019·Granted Jul 7, 2020·40 cites·20 claims
- 0397US7291545B2Plasma immersion ion implantation process using a capacitively couple plasma source having low dissociation and low minimum plasma voltageAPPLIED MATERIALS INC·Filed 2005·Granted Nov 6, 2007·73 cites·20 claims
- 0496US10544505B2Deposition or treatment of diamond-like carbon in a plasma reactorAPPLIED MATERIALS INC·Filed 2017·Granted Jan 28, 2020·12 cites·15 claims
- 0596US10249495B2Diamond like carbon layer formed by an electron beam plasma processAPPLIED MATERIALS INC·Filed 2016·Granted Apr 2, 2019·17 cites·16 claims
- 0695US7137354B2Plasma immersion ion implantation apparatus including a plasma source having low dissociation and low minimum plasma voltageAPPLIED MATERIALS INC·Filed 2003·Granted Nov 21, 2006·63 cites·79 claims
- 0795US7037813B2Plasma immersion ion implantation process using a capacitively coupled plasma source having low dissociation and low minimum plasma voltageAPPLIED MATERIALS INC·Filed 2003·Granted May 2, 2006·76 cites·86 claims
- 0890US7700465B2Plasma immersion ion implantation process using a plasma source having low dissociation and low minimum plasma voltageAPPLIED MATERIALS INC·Filed 2003·Granted Apr 20, 2010·25 cites·89 claims
- 0990US7303982B2Plasma immersion ion implantation process using an inductively coupled plasma source having low dissociation and low minimum plasma voltageAPPLIED MATERIALS INC·Filed 2003·Granted Dec 4, 2007·33 cites·84 claims
- 1086US11043375B2Plasma deposition of carbon hardmaskAPPLIED MATERIALS INC·Filed 2018·Granted Jun 22, 2021·4 cites·19 claims
- 1186US7320734B2Plasma immersion ion implantation system including a plasma source having low dissociation and low minimum plasma voltageAPPLIED MATERIALS INC·Filed 2003·Granted Jan 22, 2008·24 cites·22 claims
- 1284US11043387B2Methods and apparatus for processing a substrateAPPLIED MATERIALS INC·Filed 2019·Granted Jun 22, 2021·2 cites·11 claims
- 1379US7430984B2Method to drive spatially separate resonant structure with spatially distinct plasma secondaries using a single generator and switching elementsAPPLIED MATERIALS INC·Filed 2002·Granted Oct 7, 2008·15 cites·49 claims
- 1469US2023162996A1Etching apparatusAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 1566US2021296131A1Methods and apparatus for processing a substrateAPPLIED MATERIALS INC·Filed 2021·Application pending·0 cites
- 1658US2007119546A1Plasma immersion ion implantation apparatus including a capacitively coupled plasma source having low dissociation and low minimum plasma voltageAPPLIED MATERIALS INC·Filed 2006·Application pending·0 cites
- 1755US2019393053A1Etching apparatusAPPLIED MATERIALS INC·Filed 2019·Application pending·0 cites
- 1855US2019228970A1Diamond like carbon layer formed by an electron beam plasma processAPPLIED MATERIALS INC·Filed 2019·Application pending·0 cites
- 1952US10790153B2Methods and apparatus for electron beam etching processAPPLIED MATERIALS INC·Filed 2019·Granted Sep 29, 2020·0 cites·15 claims
- 2045US9721760B2Electron beam plasma source with reduced metal contaminationAPPLIED MATERIALS INC·Filed 2013·Granted Aug 1, 2017·0 cites·7 claims
- 2139US2018277340A1Plasma reactor with electron beam of secondary electronsYANG YANG·Filed 2018·Application pending·0 cites
- 2237US2004027781A1Low loss RF bias electrode for a plasma reactor with enhanced wafer edge RF coupling and highly efficient wafer coolingFiled 2002·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →