Inventor · disambiguated record
Vladimir Machkaoutsan
Also filed as: MACHKAOUTSAN VLADIMIR
33 granted patents·9 pending applications·2,065 citations·filing 2008–2024
97Inventor score
Top patents by PatentIndex Score
42 records- 0198US10361201B2Semiconductor structure and device formed using selective epitaxial processASM IP HOLDING BV·Filed 2016·Granted Jul 23, 2019·412 cites·9 claims
- 0298US9240412B2Semiconductor structure and device and methods of forming same using selective epitaxial processASM IP HOLDING BV·Filed 2013·Granted Jan 19, 2016·503 cites·20 claims
- 0398US8841182B1Silane and borane treatments for titanium carbide filmsASM IP HOLDING BV·Filed 2013·Granted Sep 23, 2014·529 cites·22 claims
- 0497US9793164B2Self-aligned metal cut and via for back-end-of-line (BEOL) processes for semiconductor integrated circuit (IC) fabrication, and related processes and devicesQUALCOMM INC·Filed 2015·Granted Oct 17, 2017·23 cites·19 claims
- 0596US9871121B2Semiconductor device having a gap defined thereinQUALCOMM INC·Filed 2014·Granted Jan 16, 2018·25 cites·16 claims
- 0696US9136180B2Process for depositing electrode with high effective work functionMACHKAOUTSAN VLADIMIR·Filed 2012·Granted Sep 15, 2015·466 cites·38 claims
- 0795US9799560B2Self-aligned structureQUALCOMM INC·Filed 2015·Granted Oct 24, 2017·13 cites·40 claims
- 0894US9553148B2Method of making a wire-based semiconductor deviceASM IP HOLDING BV·Filed 2015·Granted Jan 24, 2017·10 cites·13 claims
- 0994US9257556B2Silicon germanium FinFET formation by Ge condensationQUALCOMM INC·Filed 2014·Granted Feb 9, 2016·19 cites·26 claims
- 1092US9953979B2Contact wrap around structureQUALCOMM INC·Filed 2015·Granted Apr 24, 2018·8 cites·14 claims
- 1191US9824936B2Adjacent device isolationQUALCOMM INC·Filed 2016·Granted Nov 21, 2017·6 cites·10 claims
- 1289US11094627B2Methods used in forming a memory array comprising strings of memory cellsMICRON TECHNOLOGY INC·Filed 2019·Granted Aug 17, 2021·4 cites·20 claims
- 1387US9502414B2Adjacent device isolationQUALCOMM INC·Filed 2015·Granted Nov 22, 2016·4 cites·18 claims
- 1486US11690210B2Three-dimensional dynamic random-access memory arrayMICRON TECHNOLOGY INC·Filed 2019·Granted Jun 27, 2023·4 cites·24 claims
- 1586US9236247B2Silane and borane treatments for titanium carbide filmsASM IP HOLDING BV·Filed 2014·Granted Jan 12, 2016·5 cites·22 claims
- 1685US9012278B2Method of making a wire-based semiconductor deviceASM IP HOLDING BV·Filed 2013·Granted Apr 21, 2015·5 cites·27 claims
- 1784US10157992B2Nanowire device with reduced parasiticsQUALCOMM INC·Filed 2015·Granted Dec 18, 2018·3 cites·7 claims
- 1884US10043796B2Vertically stacked nanowire field effect transistorsQUALCOMM INC·Filed 2016·Granted Aug 7, 2018·4 cites·33 claims
- 1983US9728718B2Magnetic tunnel junction (MTJ) device arrayQUALCOMM INC·Filed 2016·Granted Aug 8, 2017·3 cites·20 claims
- 2082US8399344B2Method for adjusting the threshold voltage of a gate stack of a PMOS devicePIERREUX DIETER·Filed 2010·Granted Mar 19, 2013·7 cites·9 claims
- 2181US10032678B2Nanowire channel structures of continuously stacked nanowires for complementary metal oxide semiconductor (CMOS) devicesQUALCOMM INC·Filed 2016·Granted Jul 24, 2018·3 cites·29 claims
- 2278US2024321727A1Memory arrays comprising operative channel-material strings and dummy pillarsLODESTAR LICENSING GROUP LLC·Filed 2024·Application pending·0 cites
- 2377US11549177B2Process for passivating dielectric filmsASM INT NV·Filed 2019·Granted Jan 10, 2023·0 cites·19 claims
- 2476US10513772B2Process for passivating dielectric filmsBLOMBERG TOM E·Filed 2010·Granted Dec 24, 2019·1 cites·10 claims
- 2576US9570509B2Magnetic tunnel junction (MTJ) device arrayQUALCOMM INC·Filed 2015·Granted Feb 14, 2017·2 cites·30 claims
- 2672US10079293B2Semiconductor device having a gap defined thereinQUALCOMM INC·Filed 2017·Granted Sep 18, 2018·1 cites·23 claims
- 2771US9385164B2Method of making a resistive random access memory device with metal-doped resistive switching layerASM IP HOLDING BV·Filed 2014·Granted Jul 5, 2016·4 cites·6 claims
- 2866US2021343640A1Memory Arrays Comprising Operative Channel-Material Strings And Dummy PillarsMICRON TECHNOLOGY INC·Filed 2021·Application pending·0 cites
- 2958US9564518B2Method and apparatus for source-drain junction formation in a FinFET with in-situ dopingQUALCOMM INC·Filed 2014·Granted Feb 7, 2017·0 cites·17 claims
- 3058US8367548B2Stable silicide films and methods for making the sameASM INC·Filed 2008·Granted Feb 5, 2013·1 cites·37 claims
- 3157US9583348B2Silane and borane treatments for titanium carbide filmsASM IP HOLDING BV·Filed 2016·Granted Feb 28, 2017·0 cites·20 claims
- 3256US2017154778A1Silane and borane treatments for titanium carbide filmsASM IP HOLDING BV·Filed 2017·Application pending·0 cites
- 3354US2019067435A1Nanowire device with reduced parasiticsQUALCOMM INC·Filed 2018·Application pending·0 cites
- 3449US2017104088A1Method and apparatus for source-drain junction formation in a finfet with in-situ dopingQUALCOMM INC·Filed 2016·Application pending·0 cites
- 3548US9496181B2Sub-fin device isolationQUALCOMM INC·Filed 2014·Granted Nov 15, 2016·0 cites·12 claims
- 3648US8956939B2Method of making a resistive random access memory deviceASM INT·Filed 2013·Granted Feb 17, 2015·0 cites·23 claims
- 3747US11088070B2Method of forming a multi-level interconnect structure in a semiconductor deviceIMEC VZW·Filed 2020·Granted Aug 10, 2021·0 cites·14 claims
- 3841US10186459B2Selective fin cutIMEC VZW·Filed 2017·Granted Jan 22, 2019·0 cites·18 claims
- 3941US2020083116A1Gate, Contact, and Fin Cut MethodIMEC VZW·Filed 2019·Application pending·0 cites
- 4038US2017236841A1Fin with an epitaxial cladding layerQUALCOMM INC·Filed 2016·Application pending·0 cites
- 4136US2017110541A1Nanowire channel structures of continuously stacked heterogeneous nanowires for complementary metal oxide semiconductor (cmos) devicesQUALCOMM INC·Filed 2016·Application pending·0 cites
- 4233US2016049487A1Device including cavity and self-aligned contact and method of fabricating the sameQUALCOMM INC·Filed 2015·Application pending·0 cites
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