Inventor · disambiguated record
Yuichi Oshima
Also filed as: OSHIMA YUICHI
32 granted patents·15 pending applications·293 citations·filing 1999–2025
96Inventor score
Top patents by PatentIndex Score
47 records- 0195US6924159B2Semiconductor substrate made of group III nitride, and process for manufacture thereofHITACHI CABLE·Filed 2002·Granted Aug 2, 2005·113 cites·37 claims
- 0285US7196399B2Epitaxially grown nitride-based compound semiconductor crystal substrate structure with low dislocation densityHITACHI CABLE·Filed 2004·Granted Mar 27, 2007·29 cites·16 claims
- 0384US7189588B2Group III nitride semiconductor substrate and its manufacturing methodHITACHI CABLE·Filed 2003·Granted Mar 13, 2007·30 cites·33 claims
- 0484US6812051B2Method of forming an epitaxially grown nitride-based compound semiconductor crystal substrate structure and the same substrate structureNEC CORP·Filed 2002·Granted Nov 2, 2004·26 cites·51 claims
- 0579US7791103B2Group III nitride semiconductor substrateHITACHI CABLE·Filed 2007·Granted Sep 7, 2010·7 cites·18 claims
- 0679US7271404B2Group III-V nitride-based semiconductor substrate and method of making sameHITACHI CABLE·Filed 2005·Granted Sep 18, 2007·6 cites·8 claims
- 0778US7906412B2Method of fabricating group III nitride semiconductor single crystal, and method of fabricating group III nitride semiconductor single crystal substrateHITACHI CABLE·Filed 2009·Granted Mar 15, 2011·5 cites·14 claims
- 0877US7348278B2Method of making nitride-based compound semiconductor crystal and substrateHITACHI CABLE·Filed 2005·Granted Mar 25, 2008·5 cites·13 claims
- 0977US7118934B2Porous substrate for epitaxial growth, method for manufacturing same, and method for manufacturing III-nitride semiconductor substrateHITACHI CABLE·Filed 2004·Granted Oct 10, 2006·18 cites·35 claims
- 1076US7097920B2Group III nitride based semiconductor substrate and process for manufacture thereofHITACHI CABLE·Filed 2003·Granted Aug 29, 2006·16 cites·16 claims
- 1171US7662488B2Nitride-based semiconductor substrate and method of making the sameHITACHI CABLE·Filed 2006·Granted Feb 16, 2010·3 cites·8 claims
- 1269US10060047B2Nitride semiconductor crystal producing method including growing nitride semiconductor crystal over seed crystal substrateSUMITOMO CHEMICAL CO·Filed 2014·Granted Aug 28, 2018·0 cites·31 claims
- 1369US7829913B2Porous substrate and its manufacturing method, and gan semiconductor multilayer substrate and its manufacturing methodHITACHI CABLE·Filed 2003·Granted Nov 9, 2010·15 cites·13 claims
- 1468US8690636B2Compound semiconductor substrate production methodOSHIMA YUICHI·Filed 2010·Granted Apr 8, 2014·2 cites·13 claims
- 1566US8786052B2Nitride semiconductor crystal producing method, nitride semiconductor epitaxial wafer, and nitride semiconductor freestanding substrateFUJIKURA HAJIME·Filed 2012·Granted Jul 22, 2014·0 cites·3 claims
- 1664US8143702B2Group III-V nitride based semiconductor substrate and method of making sameOSHIMA YUICHI·Filed 2010·Granted Mar 27, 2012·1 cites·17 claims
- 1763US9246049B2Nitride-based semiconductor substrate and semiconductor deviceOSHIMA YUICHI·Filed 2008·Granted Jan 26, 2016·1 cites·8 claims
- 1863US8829651B2Nitride-based semiconductor substrate and semiconductor deviceOSHIMA YUICHI·Filed 2006·Granted Sep 9, 2014·1 cites·4 claims
- 1963US8329650B2Method of treating ischemic injury with follistatin-like 1 polypeptideWALSH KENNETH·Filed 2008·Granted Dec 11, 2012·1 cites·10 claims
- 2063US7728323B2Nitride-based semiconductor substrate, method of making the same and epitaxial substrate for nitride-based semiconductor light emitting deviceHITACHI CABLE·Filed 2006·Granted Jun 1, 2010·1 cites·8 claims
- 2160US7075111B2Nitride semiconductor substrate and its production methodHITACHI CABLE·Filed 2004·Granted Jul 11, 2006·7 cites·21 claims
- 2258US11804519B2Crystalline multilayer structure, semiconductor device, and method of manufacturing crystalline structureFLOSFIA INC·Filed 2021·Granted Oct 31, 2023·0 cites·11 claims
- 2358US11694894B2Crystalline film containing a crystalline metal oxide and method for manufacturing the same under partial pressureFLOSFIA INC·Filed 2021·Granted Jul 4, 2023·0 cites·21 claims
- 2457US8624356B2Group III nitride semiconductor substrate production method, and group III nitride semiconductor substrateOSHIMA YUICHI·Filed 2009·Granted Jan 7, 2014·1 cites·6 claims
- 2556US2009326053A1Diagnostic uses of follistatin-like 1UNIV BOSTON·Filed 2009·Application pending·0 cites
- 2655US2025198052A1GaN CRYSTAL AND METHOD FOR PRODUCING GaN CRYSTALMITSUBISHI CHEM CORP·Filed 2025·Application pending·0 cites
- 2754US2023203711A1Gan crystal and gan substrateMITSUBISHI CHEM CORP·Filed 2023·Application pending·0 cites
- 2853US8715413B2Method for manufacturing a group III nitride semiconductor crystal and method for manufacturing a group III nitride semiconductor substrateOSHIMA YUICHI·Filed 2010·Granted May 6, 2014·0 cites·19 claims
- 2952US10460934B2Crystalline film, semiconductor device including crystalline film, and method for producing crystalline filmFLOSFIA INC·Filed 2018·Granted Oct 29, 2019·0 cites·29 claims
- 3050US8975230B2Method of treating ischemic injury with follistatin-like 1 polypeptideUNIV BOSTON·Filed 2012·Granted Mar 10, 2015·0 cites·11 claims
- 3149US8101939B2GaN single-crystal substrate and method for producing GaN single crystalOSHIMA YUICHI·Filed 2008·Granted Jan 24, 2012·0 cites·15 claims
- 3249US7589345B2Nitride-based compound semiconductor substrate and method for fabricating the sameHITACHI CABLE·Filed 2006·Granted Sep 15, 2009·0 cites·1 claims
- 3349US2019055646A1Method for producing crystalline filmFLOSFIA INC·Filed 2018·Application pending·0 cites
- 3449US2021384336A1Gan crystal and substrateMITSUBISHI CHEM CORP·Filed 2021·Application pending·0 cites
- 3549US2022189769A1Crystal film, semiconductor device including crystal film, and method of producing crystal filmFLOSFIA INC·Filed 2022·Application pending·0 cites
- 3648US2008118733A1Nitride semiconductor ingot, nitride semiconductor substrate fabricated from the same and method for making nitride semiconductor ingotHITACHI CABLE·Filed 2007·Application pending·0 cites
- 3748US2006226414A1Group III-V nitride-based semiconductor substrate and method of making sameHITACHI CABLE·Filed 2005·Application pending·0 cites
- 3847US2010028605A1Substrate for epitaxial growthOSHIMA YUICHI·Filed 2008·Application pending·0 cites
- 3945US2006191467A1Group iii nitride based semiconductor substrate and process for manufacture thereofUSUI AKIRA·Filed 2006·Application pending·0 cites
- 4042US8592316B2Nitride semiconductor substrate, production method therefor and nitride semiconductor deviceOSHIMA YUICHI·Filed 2010·Granted Nov 26, 2013·0 cites·12 claims
- 4142USRE41805EMoisture curable compositionCEMEDINE CO LTD·Filed 2003·Granted Oct 5, 2010·0 cites·7 claims
- 4241US2006228870A1Method of making group III-V nitride-based semiconductor crystalHITACHI CABLE·Filed 2005·Application pending·0 cites
- 4340US2019055667A1Method for producing crystalline filmFLOSFIA INC·Filed 2018·Application pending·0 cites
- 4440US2019057866A1Crystal, crystalline film, semiconductor device including crystalline film, and method for producing crystalline filmFLOSFIA INC·Filed 2018·Application pending·0 cites
- 4537US2011147759A1Group iii nitride semiconductor substrate and manufacturing method of the sameHITACHI CABLE·Filed 2010·Application pending·0 cites
- 4636US2012104557A1Method for manufacturing a group III nitride crystal, method for manufacturing a group III nitride template, group III nitride crystal and group III nitride templateYOSHIDA TAKEHIRO·Filed 2011·Application pending·0 cites
- 4735US6306966B1Moisture curable compositionCEMEDINE CO LTD·Filed 1999·Granted Oct 23, 2001·5 cites·4 claims
Join the waitlist — get patent alerts
Get an alert when Yuichi Oshima files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →