Inventor · disambiguated record
Jeong Soo Byun
Also filed as: BYUN JEONG · BYUN JEONG S · BYUN JEONG SOO
64 granted patents·10 pending applications·3,402 citations·filing 1994–2020
99Inventor score
Files withAPPLIED MATERIALS INC37LG SEMICON CO LTD13CYPRESS SEMICONDUCTOR CORP6BYUN JEONG SOO5Longitude Flash Memory Solutions Ltd4
Top patents by PatentIndex Score
74 records- 0199US7208413B2Formation of boride barrier layers using chemisorption techniquesAPPLIED MATERIALS INC·Filed 2004·Granted Apr 24, 2007·536 cites·28 claims
- 0299US6831004B2Formation of boride barrier layers using chemisorption techniquesAPPLIED MATERIALS INC·Filed 2003·Granted Dec 14, 2004·533 cites·34 claims
- 0399US6551929B1Bifurcated deposition process for depositing refractory metal layers employing atomic layer deposition and chemical vapor deposition techniquesAPPLIED MATERIALS INC·Filed 2000·Granted Apr 22, 2003·396 cites·60 claims
- 0498US8940645B2Radical oxidation process for fabricating a nonvolatile charge trap memory deviceRAMKUMAR KRISHNASWAMY·Filed 2012·Granted Jan 27, 2015·33 cites·20 claims
- 0598US8318608B2Method of fabricating a nonvolatile charge trap memory deviceRAMKUMAR KRISHNASWAMY·Filed 2008·Granted Nov 27, 2012·46 cites·20 claims
- 0698US7501343B2Formation of boride barrier layers using chemisorption techniquesAPPLIED MATERIALS INC·Filed 2007·Granted Mar 10, 2009·47 cites·22 claims
- 0798US7465666B2Method for forming tungsten materials during vapor deposition processesAPPLIED MATERIALS INC·Filed 2007·Granted Dec 16, 2008·47 cites·33 claims
- 0898US7235486B2Method for forming tungsten materials during vapor deposition processesAPPLIED MATERIALS INC·Filed 2006·Granted Jun 26, 2007·43 cites·39 claims
- 0998US6936538B2Method and apparatus for depositing tungsten after surface treatment to improve film characteristicsAPPLIED MATERIALS INC·Filed 2002·Granted Aug 30, 2005·135 cites·22 claims
- 1098US6620723B1Formation of boride barrier layers using chemisorption techniquesAPPLIED MATERIALS INC·Filed 2000·Granted Sep 16, 2003·204 cites·4 claims
- 1197US7674715B2Method for forming tungsten materials during vapor deposition processesAPPLIED MATERIALS INC·Filed 2008·Granted Mar 9, 2010·35 cites·25 claims
- 1297US7501344B2Formation of boride barrier layers using chemisorption techniquesAPPLIED MATERIALS INC·Filed 2007·Granted Mar 10, 2009·44 cites·21 claims
- 1397US7405158B2Methods for depositing tungsten layers employing atomic layer deposition techniquesAPPLIED MATERIALS INC·Filed 2005·Granted Jul 29, 2008·105 cites·29 claims
- 1497US7115494B2Method and system for controlling the presence of fluorine in refractory metal layersAPPLIED MATERIALS INC·Filed 2006·Granted Oct 3, 2006·30 cites·54 claims
- 1596US9406574B1Oxide formation in a plasma processCYPRESS SEMICONDUCTOR CORP·Filed 2014·Granted Aug 2, 2016·12 cites·9 claims
- 1696US8993453B1Method of fabricating a nonvolatile charge trap memory deviceRAMKUMAR KRISHNASWAMY·Filed 2012·Granted Mar 31, 2015·17 cites·13 claims
- 1796US7846840B2Method for forming tungsten materials during vapor deposition processesAPPLIED MATERIALS INC·Filed 2009·Granted Dec 7, 2010·19 cites·22 claims
- 1896US7749815B2Methods for depositing tungsten after surface treatmentAPPLIED MATERIALS INC·Filed 2007·Granted Jul 6, 2010·33 cites·20 claims
- 1996US7745333B2Methods for depositing tungsten layers employing atomic layer deposition techniquesAPPLIED MATERIALS INC·Filed 2008·Granted Jun 29, 2010·47 cites·15 claims
- 2096US7605083B2Formation of composite tungsten filmsAPPLIED MATERIALS INC·Filed 2008·Granted Oct 20, 2009·39 cites·25 claims
- 2196US6939804B2Formation of composite tungsten filmsAPPLIED MATERIALS INC·Filed 2002·Granted Sep 6, 2005·116 cites·61 claims
- 2296US6903031B2In-situ-etch-assisted HDP deposition using SiF4 and hydrogenAPPLIED MATERIALS INC·Filed 2003·Granted Jun 7, 2005·111 cites·26 claims
- 2395US10593812B2Radical oxidation process for fabricating a nonvolatile charge trap memory deviceLongitude Flash Memory Solutions Ltd·Filed 2018·Granted Mar 17, 2020·7 cites·20 claims
- 2495US10304968B2Radical oxidation process for fabricating a nonvolatile charge trap memory deviceCYPRESS SEMICONDUCTOR CORP·Filed 2015·Granted May 28, 2019·8 cites·14 claims
- 2595US6855368B1Method and system for controlling the presence of fluorine in refractory metal layersAPPLIED MATERIALS INC·Filed 2000·Granted Feb 15, 2005·58 cites·15 claims
- 2694US8592891B1Methods for fabricating semiconductor memory with process induced strainPOLISHCHUK IGOR·Filed 2012·Granted Nov 26, 2013·19 cites·20 claims
- 2794US7238552B2Method and apparatus for depositing tungsten after surface treatment to improve film characteristicsAPPLIED MATERIALS INC·Filed 2005·Granted Jul 3, 2007·18 cites·49 claims
- 2894US7085616B2Atomic layer deposition apparatusAPPLIED MATERIALS INC·Filed 2001·Granted Aug 1, 2006·42 cites·39 claims
- 2993US7799670B2Plasma oxidation of a memory layer to form a blocking layer in non-volatile charge trap memory devicesCYPRESS SEMICONDUCTOR CORP·Filed 2008·Granted Sep 21, 2010·24 cites·11 claims
- 3092US9460974B1Oxide formation in a plasma processCYPRESS SEMICONDUCTOR CORP·Filed 2015·Granted Oct 4, 2016·6 cites·14 claims
- 3192US8027746B2Atomic layer deposition apparatusAPPLIED MATERIALS INC·Filed 2010·Granted Sep 27, 2011·4 cites·15 claims
- 3292US7384867B2Formation of composite tungsten filmsAPPLIED MATERIALS INC·Filed 2005·Granted Jun 10, 2008·16 cites·48 claims
- 3391US7033922B2Method and system for controlling the presence of fluorine in refractory metal layersAPPLIED MATERIALS INC·Filed 2004·Granted Apr 25, 2006·30 cites·26 claims
- 3491US6849545B2System and method to form a composite film stack utilizing sequential deposition techniquesAPPLIED MATERIALS INC·Filed 2001·Granted Feb 1, 2005·54 cites·49 claims
- 3589US7860597B2Atomic layer deposition apparatusAPPLIED MATERIALS INC·Filed 2009·Granted Dec 28, 2010·5 cites·19 claims
- 3688US8626330B2Atomic layer deposition apparatusCHIN BARRY L·Filed 2011·Granted Jan 7, 2014·4 cites·14 claims
- 3786US7660644B2Atomic layer deposition apparatusAPPLIED MATERIALS INC·Filed 2006·Granted Feb 9, 2010·4 cites·10 claims
- 3886US7033945B2Gap filling with a composite layerAPPLIED MATERIALS INC·Filed 2004·Granted Apr 25, 2006·43 cites·17 claims
- 3986US5668040AMethod for forming a semiconductor device electrode which also serves as a diffusion barrierLG SEMICON CO LTD·Filed 1996·Granted Sep 16, 1997·64 cites·11 claims
- 4084US9031685B2Atomic layer deposition apparatusAPPLIED MATERIALS INC·Filed 2014·Granted May 12, 2015·1 cites·19 claims
- 4184US8119538B1Oxide formation in a plasma processBYUN JEONG SOO·Filed 2007·Granted Feb 21, 2012·8 cites·15 claims
- 4282US8168933B2Method for forming image sensor with shield structuresBYUN JEONG SOO·Filed 2011·Granted May 1, 2012·3 cites·17 claims
- 4382US7049211B2In-situ-etch-assisted HDP deposition using SiF4APPLIED MATERIALS INC·Filed 2005·Granted May 23, 2006·6 cites·12 claims
- 4480US5604140AMethod for forming fine titanium nitride film and method for fabricating semiconductor element using the sameLG SEMICON CO LTD·Filed 1995·Granted Feb 18, 1997·51 cites·17 claims
- 4579US7294588B2In-situ-etch-assisted HDP depositionAPPLIED MATERIALS INC·Filed 2006·Granted Nov 13, 2007·5 cites·13 claims
- 4678US10128258B2Oxide formation in a plasma processCYPRESS SEMICONDUCTOR CORP·Filed 2016·Granted Nov 13, 2018·1 cites·7 claims
- 4777US5607884AMethod for fabricating MOS transistor having source/drain region of shallow junction and silicide filmLG SEMICON CO LTD·Filed 1994·Granted Mar 4, 1997·43 cites·8 claims
- 4875US6096630AMethod for fabricating semiconductor deviceLG SEMICON CO LTD·Filed 1997·Granted Aug 1, 2000·36 cites·13 claims
- 4972US8822349B1Oxide formation in a plasma processBYUN JEONG SOO·Filed 2012·Granted Sep 2, 2014·2 cites·18 claims
- 5072US5712181AMethod for the formation of polycide gate in semiconductor deviceLG SEMICON CO LTD·Filed 1995·Granted Jan 27, 1998·36 cites·8 claims
Showing the top 50 of 74 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →