Inventor · disambiguated record
Ashima B. Chakravarti
Also filed as: CHAKRAVARTI ASHIMA · CHAKRAVARTI ASHIMA B · CHAKRAVARTI ASHIMA BHATTACHARY
37 granted patents·8 pending applications·1,177 citations·filing 1995–2012
98Inventor score
Top patents by PatentIndex Score
45 records- 0199US6030881AHigh throughput chemical vapor deposition process capable of filling high aspect ratio structuresNOVELLUS SYSTEMS INC·Filed 1998·Granted Feb 29, 2000·575 cites·34 claims
- 0298US7595010B2Method for producing a doped nitride film, doped oxide film and other doped filmsIBM·Filed 2007·Granted Sep 29, 2009·57 cites·1 claims
- 0398US7361611B2Doped nitride film, doped oxide film and other doped filmsIBM·Filed 2006·Granted Apr 22, 2008·55 cites·14 claims
- 0495US7001844B2Material for contact etch layer to enhance device performanceIBM·Filed 2004·Granted Feb 21, 2006·74 cites·35 claims
- 0591US8575655B2Method and structure for PMOS devices with high K metal gate integration and SiGe channel engineeringBEDELL STEPHEN W·Filed 2012·Granted Nov 5, 2013·9 cites·19 claims
- 0690US6838695B2CMOS device structure with improved PFET gate electrodeIBM·Filed 2002·Granted Jan 4, 2005·74 cites·14 claims
- 0789US5909044AProcess for forming a high density semiconductor deviceIBM·Filed 1997·Granted Jun 1, 1999·57 cites·16 claims
- 0887US6500772B2Methods and materials for depositing films on semiconductor substratesIBM·Filed 2001·Granted Dec 31, 2002·40 cites·8 claims
- 0983US8173524B1Process for epitaxially growing epitaxial material regionsCHAKRAVARTI ASHIMA B·Filed 2011·Granted May 8, 2012·6 cites·24 claims
- 1080US6436760B1Method for reducing surface oxide in polysilicon processingIBM·Filed 2001·Granted Aug 20, 2002·23 cites·19 claims
- 1179US6077786AMethods and apparatus for filling high aspect ratio structures with silicate glassIBM·Filed 1997·Granted Jun 20, 2000·57 cites·12 claims
- 1278US8900961B2Selective deposition of germanium spacers on nitrideCHAKRAVARTI ASHIMA B·Filed 2010·Granted Dec 2, 2014·3 cites·20 claims
- 1377US6576565B1RTCVD process and reactor for improved conformality and step-coverageINFINEON TECHNOLOGIES AG·Filed 2002·Granted Jun 10, 2003·19 cites·20 claims
- 1475US6204112B1Process for forming a high density semiconductor deviceIBM·Filed 1999·Granted Mar 20, 2001·26 cites·17 claims
- 1573US8440547B2Method and structure for PMOS devices with high K metal gate integration and SiGe channel engineeringBEDELL STEPHEN W·Filed 2009·Granted May 14, 2013·3 cites·13 claims
- 1671US8685845B2Epitaxial growth of silicon doped with carbon and phosphorus using hydrogen carrier gasDUBE ABHISHEK·Filed 2010·Granted Apr 1, 2014·3 cites·15 claims
- 1771US7759213B2Pattern independent Si:C selective epitaxyIBM·Filed 2008·Granted Jul 20, 2010·3 cites·18 claims
- 1868US6528383B1Simultaneous formation of deep trench capacitor and resistorIBM·Filed 2001·Granted Mar 4, 2003·14 cites·7 claims
- 1965US8080451B2Fabricating semiconductor structuresADAM THOMAS N·Filed 2010·Granted Dec 20, 2011·1 cites·19 claims
- 2064US7687804B2Method for fabricating a semiconductor structures and structures thereofIBM·Filed 2008·Granted Mar 30, 2010·1 cites·12 claims
- 2164US7119016B2Deposition of carbon and nitrogen doped poly silicon films, and retarded boron diffusion and improved poly depletionAPPLIED MATERIALS INC·Filed 2003·Granted Oct 10, 2006·10 cites·5 claims
- 2264US6555166B2Method for reducing the microloading effect in a chemical vapor deposition reactorIBM·Filed 2001·Granted Apr 29, 2003·6 cites·20 claims
- 2363US7767579B2Protection of SiGe during etch and clean operationsIBM·Filed 2007·Granted Aug 3, 2010·1 cites·20 claims
- 2460US7838932B2Raised STI structure and superdamascene technique for NMOSFET performance enhancement with embedded silicon carbonIBM·Filed 2008·Granted Nov 23, 2010·1 cites·12 claims
- 2560US7473594B2Raised STI structure and superdamascene technique for NMOSFET performance enhancement with embedded silicon carbonIBM·Filed 2006·Granted Jan 6, 2009·1 cites·7 claims
- 2659US6429149B1Low temperature LPCVD PSG/BPSG processIBM·Filed 2000·Granted Aug 6, 2002·6 cites·18 claims
- 2754US7888241B2Selective deposition of germanium spacers on nitrideIBM·Filed 2008·Granted Feb 15, 2011·0 cites·14 claims
- 2853US5643640AFluorine doped plasma enhanced phospho-silicate glass, and processIBM·Filed 1995·Granted Jul 1, 1997·20 cites·8 claims
- 2952US2006237846A1Doped nitride film, doped oxide film and other doped films and deposition rate improvement for rtcvd processesIBM·Filed 2006·Application pending·0 cites
- 3051US7705385B2Selective deposition of germanium spacers on nitrideIBM·Filed 2005·Granted Apr 27, 2010·0 cites·17 claims
- 3151US6159870ABorophosphosilicate glass incorporated with fluorine for low thermal budget gap fillIBM·Filed 1998·Granted Dec 12, 2000·16 cites·39 claims
- 3249US6057250ALow temperature reflow dielectric-fluorinated BPSGIBM·Filed 1998·Granted May 2, 2000·16 cites·7 claims
- 3349US2013009211A1Silicon germanium film formation method and structureIBM·Filed 2012·Application pending·0 cites
- 3448US8389352B2Silicon germanium film formation method and structureCHAKRAVARTI ASHIMA B·Filed 2011·Granted Mar 5, 2013·0 cites·15 claims
- 3547US2006040497A1Material for contact etch layer to enhance device performanceCHAKRAVARTI ASHIMA B·Filed 2005·Application pending·0 cites
- 3646US7776624B2Method for improving semiconductor surfacesIBM·Filed 2008·Granted Aug 17, 2010·0 cites·9 claims
- 3745US2005287747A1Doped nitride film, doped oxide film and other doped filmsIBM·Filed 2004·Application pending·0 cites
- 3845US2009267118A1Method for forming carbon silicon alloy (csa) and structures thereofIBM·Filed 2008·Application pending·0 cites
- 3944US8105955B2Integrated circuit system with carbon and non-carbon siliconLIU JIN PING·Filed 2006·Granted Jan 31, 2012·0 cites·20 claims
- 4043US8563446B2Technique to create a buried plate in embedded dynamic random access memory deviceCHAKRAVARTI ASHIMA B·Filed 2012·Granted Oct 22, 2013·0 cites·15 claims
- 4143US2009269926A1Polygrain engineering by adding impurities in the gas phase during chemical vapor deposition of polysiliconIBM·Filed 2008·Application pending·0 cites
- 4242US8236710B2Technique to create a buried plate in embedded dynamic random access memory deviceCHAKRAVARTI ASHIMA B·Filed 2010·Granted Aug 7, 2012·0 cites·17 claims
- 4342US2009001430A1Eliminate notching in si post si-recess rie to improve embedded doped and instrinsic si epitazial processIBM·Filed 2007·Application pending·0 cites
- 4438US7232774B2Polycrystalline silicon layer with nano-grain structure and method of manufactureIBM·Filed 2004·Granted Jun 19, 2007·0 cites·9 claims
- 4532US2002127883A1Bis (tertiarybutylamino) silane and ozone based doped and undoped oxidesFiled 2001·Application pending·0 cites
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