Doped nitride film, doped oxide film and other doped films and deposition rate improvement for rtcvd processes

Abstract

When forming a silicon nitride film from a nitrogen precursor, using a silicon precursor combination rather than a single silane precursor advantageously increases the deposition rate. For example, adding silane during formation of a silicon nitride film made using BTBAS and ammonia improves (increases) the deposition rate while still yielding a film with a favorably high stress.

1 . A method of producing a doped silicon nitride film or a doped silicon oxynitride film, the method comprising at least: 
 providing a silicon precursor combination comprising (A) an inorganic Si precursor and (B) an organic-based Si precursor;    providing at least one nitrogen precursor; and    producing said doped silicon nitride film or said doped silicon oxynitride film through deposition.    
   
   
       2 . The method of  claim 1 , wherein the silicon precursor combination comprises BTBAS and silane.  
   
   
       3 . The method of  claim 1 , comprising providing the silicon precursor combination and providing the at least one nitrogen precursor at substantially the same time and in a form of providing flow of a gas.  
   
   
       4 . The method of  claim 2 , wherein at least one additional precursor is provided in addition to the BTBAS, the silane and the at least one nitrogen precursor.  
   
   
       5 . The method of  claim 1 , wherein NH 3  is the at least one nitrogen precursor.  
   
   
       6 . The method of  claim 1 , wherein a produced film is germanium- and/or carbon-doped silicon nitride film.  
   
   
       7 . The method of  claim 1 , wherein a produced film has a tunable stress.  
   
   
       8 . The method of  claim 1 , comprising producing said film at a temperature below about 700° C.  
   
   
       9 . The method of  claim 1 , wherein the deposition is RTCVD, PECVD, LPCVD, remote plasma nitride or ALD.  
   
   
       10 . The method of  claim 1 , wherein the deposition is RTCVD and a silicon nitride film is produced.  
   
   
       11 . The method of  claim 1 , wherein a deposition rate of the film is in a range of about 190.1 to 315.1 angstroms/minute.  
   
   
       12 . The method of  claim 1 , wherein a deposition rate of the film exceeds about 128 angstroms/minute.  
   
   
       13 . The method of  claim 1 , wherein a deposition rate of the film exceeds about 190 angstroms/minute.  
   
   
       14 . The method of  claim 1 , wherein a produced film has a tunable stress in a range of about 3 GPa (compressive) to 3 GPa (tensile).  
   
   
       15 . The method of  claim 1 , wherein a produced film includes at least one dopant.  
   
   
       16 . The method of  claim 1 , wherein the method is conducted at a temperature in a range of about 400-800° C. and at a pressure in a range of about 10-650 torr.  
   
   
       17 . A method of increasing deposition rate during producing a silicon nitride film from a nitrogen precursor, the method comprising reacting the nitrogen precursor with a silicon precursor combination.  
   
   
       18 . The method of  claim 17 , wherein the silicon precursor combination comprises silane and BTBAS, and the nitrogen precursor comprises NH 3 .  
   
   
       19 . The method of  claim 17 , comprising using the silicon precursor combination to increase the deposition rate by at least 10 angstroms/minute in comparison with using a single component.  
   
   
       20 . The method of  claim 19 , comprising using the silicon precursor combination to increase the deposition rate by 50 angstroms/minute or more in comparison with using a single component.