Inventor · disambiguated record
Stephan A. Cohen
Also filed as: COHEN STEPHAN · COHEN STEPHAN A · COHEN STEPHAN ALAN
32 granted patents·6 pending applications·937 citations·filing 1994–2021
97Inventor score
Top patents by PatentIndex Score
38 records- 0198US6184121B1Chip interconnect wiring structure with low dielectric constant insulator and methods for fabricating the sameIBM·Filed 1998·Granted Feb 6, 2001·369 cites·39 claims
- 0296US10224242B1Low-resistivity metallic interconnect structuresIBM·Filed 2017·Granted Mar 5, 2019·15 cites·20 claims
- 0393US6577011B1Chip interconnect wiring structure with low dielectric constant insulator and methods for fabricating the sameIBM·Filed 2000·Granted Jun 10, 2003·86 cites·16 claims
- 0491US7223670B2DUV laser annealing and stabilization of SiCOH filmsIBM·Filed 2004·Granted May 29, 2007·33 cites·20 claims
- 0591US5876788AHigh dielectric TiO2 -SiN composite films for memory applicationsIBM·Filed 1997·Granted Mar 2, 1999·97 cites·31 claims
- 0689US9698043B1Shallow trench isolation for semiconductor devicesIBM·Filed 2016·Granted Jul 4, 2017·5 cites·5 claims
- 0787US5679269ADiamond-like carbon for use in VLSI and ULSI interconnect systemsIBM·Filed 1996·Granted Oct 21, 1997·66 cites·5 claims
- 0887US5530293ACarbon-free hydrogen silsesquioxane with dielectric constant less than 3.2 annealed in hydrogen for integrated circuitsIBM·Filed 1994·Granted Jun 25, 1996·75 cites·14 claims
- 0985US8962479B2Interconnect structures containing nitrided metallic residuesIBM·Filed 2013·Granted Feb 24, 2015·6 cites·10 claims
- 1083US9281211B2Nanoscale interconnect structureIBM·Filed 2014·Granted Mar 8, 2016·5 cites·11 claims
- 1180US6784485B1Diffusion barrier layer and semiconductor device containing sameIBM·Filed 2000·Granted Aug 31, 2004·25 cites·15 claims
- 1279US5674355ADiamond-like carbon for use in VLSI and ULSI interconnect systemsIBM·Filed 1995·Granted Oct 7, 1997·46 cites·7 claims
- 1378US8492880B2Multilayered low k cap with conformal gap fill and UV stable compressive stress propertiesBALSEANU MIHAELA·Filed 2011·Granted Jul 23, 2013·3 cites·13 claims
- 1473US8536069B2Multilayered low k cap with conformal gap fill and UV stable compressive stress propertiesBALSEANU MIHAELA·Filed 2012·Granted Sep 17, 2013·2 cites·20 claims
- 1573US6452276B1Ultra thin, single phase, diffusion barrier for metal conductorsIBM·Filed 1998·Granted Sep 17, 2002·38 cites·22 claims
- 1672US7256146B2Method of forming a ceramic diffusion barrier layerIBM·Filed 2005·Granted Aug 14, 2007·5 cites·8 claims
- 1770US8362596B2Engineered interconnect dielectric caps having compressive stress and interconnect structures containing sameIBM·Filed 2009·Granted Jan 29, 2013·4 cites·24 claims
- 1866US9613900B2Nanoscale interconnect structureIBM·Filed 2016·Granted Apr 4, 2017·1 cites·15 claims
- 1964US9006895B2Interconnect structures containing nitrided metallic residuesIBM·Filed 2013·Granted Apr 14, 2015·1 cites·15 claims
- 2061USD1009983SDrum stickCOHEN STEPHAN·Filed 2021·Granted Jan 2, 2024·2 cites·1 claims
- 2160US6940173B2Interconnect structures incorporating low-k dielectric barrier filmsIBM·Filed 2003·Granted Sep 6, 2005·6 cites·10 claims
- 2258US10204823B2Enhancing robustness of SOI substrate containing a buried N+ silicon layer for CMOS processingIBM·Filed 2017·Granted Feb 12, 2019·0 cites·7 claims
- 2358US6726996B2Laminated diffusion barrierIBM·Filed 2001·Granted Apr 27, 2004·8 cites·19 claims
- 2454US6730618B2Low k dielectric materials with inherent copper ion migration barrierIBM·Filed 2002·Granted May 4, 2004·3 cites·8 claims
- 2553US6014310AHigh dielectric TiO2 -SiN composite films for memory applicationsIBM·Filed 1998·Granted Jan 11, 2000·14 cites·8 claims
- 2652US2014216342A1Processing system for combined metal deposition and reflow anneal for forming interconnect structuresIBM·Filed 2013·Application pending·0 cites
- 2752US2007237970A1Diffusion barrier with low dielectric constant and semiconductor device containing sameIBM·Filed 2007·Application pending·0 cites
- 2851US2014220777A1Processing system for combined metal deposition and reflow anneal for forming interconnect structuresIBM·Filed 2013·Application pending·0 cites
- 2949US9922866B2Enhancing robustness of SOI substrate containing a buried N+ silicon layer for CMOS processingIBM·Filed 2015·Granted Mar 20, 2018·0 cites·11 claims
- 3049USD779812SDrumstick bagCOHEN STEPHAN·Filed 2015·Granted Feb 28, 2017·5 cites·1 claims
- 3149US7252875B2Diffusion barrier with low dielectric constant and semiconductor device containing sameIBM·Filed 2002·Granted Aug 7, 2007·2 cites·9 claims
- 3247US6414377B1Low k dielectric materials with inherent copper ion migration barrierIBM·Filed 1999·Granted Jul 2, 2002·10 cites·21 claims
- 3341US2013333923A1MODULATED COMPOSITIONAL AND STRESS CONTROLLED MULTILAYER ULTRATHIN CONFORMAL SiNx DIELECTRICS USED IN NANO DEVICE FABRICATIONBALSEANU MIHAELA·Filed 2012·Application pending·0 cites
- 3439US7172968B2Ultra thin, single phase, diffusion barrier for metal conductorsIBM·Filed 2002·Granted Feb 6, 2007·0 cites·12 claims
- 3537USD781371SDrumstick grip patternCOHEN STEPHAN·Filed 2015·Granted Mar 14, 2017·2 cites·1 claims
- 3637US2004077140A1Apparatus and method for forming uniformly thick anodized films on large substratesFiled 2002·Application pending·0 cites
- 3734US2002196594A1Integrated circuit over voltage protectionFiled 2001·Application pending·0 cites
- 3833US6559046B1Insulator for integrated circuits and processIBM·Filed 1997·Granted May 6, 2003·3 cites·18 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →