Inventor · disambiguated record
Gwo-Yuh Shiau
Also filed as: SHIAU GWO Y · SHIAU GWO-YUH
27 granted patents·4 pending applications·731 citations·filing 1990–2014
97Inventor score
Files withTAIWAN SEMICONDUCTOR MFG21VANGUARD INT SEMICONDUCT CORP4IND TECH RES INST2HSIEH YUAN-CHIH1LIU HUEI-RU1
Top patents by PatentIndex Score
31 records- 0195US6077756AOverlay target pattern and algorithm for layer-to-layer overlay metrology for semiconductor processingVANGUARD INT SEMICONDUCT CORP·Filed 1998·Granted Jun 20, 2000·262 cites·21 claims
- 0294US7648851B2Method of fabricating backside illuminated image sensorTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Jan 19, 2010·46 cites·19 claims
- 0394US6645851B1Method of forming planarized coatings on contact hole patterns of various duty ratiosTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Nov 11, 2003·98 cites·38 claims
- 0493US7709872B2Methods for fabricating image sensor devicesTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted May 4, 2010·16 cites·16 claims
- 0592US7883917B2Semiconductor device with bonding padTAIWAN SEMICONDUCTOR MFG·Filed 2009·Granted Feb 8, 2011·20 cites·8 claims
- 0692US7659595B2Embedded bonding pad for backside illuminated image sensorTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Feb 9, 2010·25 cites·17 claims
- 0787US7883926B2Methods for fabricating image sensor devicesTAIWAN SEMICONDUCTOR MFG·Filed 2010·Granted Feb 8, 2011·4 cites·16 claims
- 0886US8847319B2Dummy structure for multiple gate dielectric interface and methodsLIU HUEI-RU·Filed 2012·Granted Sep 30, 2014·11 cites·19 claims
- 0981US7923344B2Method of fabricating backside illuminated image sensorTAIWAN SEMICONDUCTOR MFG·Filed 2009·Granted Apr 12, 2011·4 cites·20 claims
- 1080US6803291B1Method to preserve alignment mark optical integrityTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Oct 12, 2004·32 cites·20 claims
- 1179USRE44376ESilicon substrate with reduced surface roughnessSHIAU GWO-YUH·Filed 2011·Granted Jul 16, 2013·5 cites·16 claims
- 1278US8357561B2Method of fabricating backside illuminated image sensorTAIWAN SEMICONDUCTOR MFG·Filed 2011·Granted Jan 22, 2013·1 cites·20 claims
- 1378US5677001AStriation-free coating method for high viscosity resist coatingVANGUARD INT SEMICONDUCT CORP·Filed 1996·Granted Oct 14, 1997·34 cites·23 claims
- 1476US7443005B2Lens structures suitable for use in image sensors and method for making the sameTIAWAN SEMICONDUCTOR MFG CO LT·Filed 2004·Granted Oct 28, 2008·24 cites·22 claims
- 1576US5985363AMethod of providing uniform photoresist coatings for tight control of image dimensionsVANGUARD INT SEMICONDUCT CORP·Filed 1997·Granted Nov 16, 1999·57 cites·21 claims
- 1675US7732299B2Process for wafer bondingTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Jun 8, 2010·6 cites·20 claims
- 1774USRE41697EMethod of forming planarized coatings on contact hole patterns of various duty ratiosTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Sep 14, 2010·4 cites·56 claims
- 1870US5982044AAlignment pattern and algorithm for photolithographic alignment marks on semiconductor substratesVANGUARD INT SEMICONDUCT CORP·Filed 1998·Granted Nov 9, 1999·40 cites·24 claims
- 1969US7863067B2Silicon substrate with reduced surface roughnessTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Jan 4, 2011·2 cites·14 claims
- 2067US7144773B1Method for preventing trenching in fabricating split gate flash devicesTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Dec 5, 2006·3 cites·14 claims
- 2164US8048807B2Method and apparatus for thinning a substrateTAIWAN SEMICONDUCTOR MFG·Filed 2008·Granted Nov 1, 2011·2 cites·19 claims
- 2262US6632590B1Enhance the process window of memory cell line/space dense pattern in sub-wavelength processTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Oct 14, 2003·8 cites·17 claims
- 2351US9356108B2Dummy structure for multiple gate dielectric interface and methodsTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted May 31, 2016·0 cites·18 claims
- 2451US5200474APolyimide adhesive composition including barbituric acid modifierIND TECH RES INST·Filed 1990·Granted Apr 6, 1993·13 cites·7 claims
- 2549US2008237761A1System and method for enhancing light sensitivity for backside illumination image sensorTAIWAN SEMICONDUCTOR MFG·Filed 2007·Application pending·0 cites
- 2649US2008246152A1Semiconductor device with bonding padTAIWAN SEMICONDUCTOR MFG·Filed 2007·Application pending·0 cites
- 2748US8053853B2Color filter-embedded MSM image sensorTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Nov 8, 2011·0 cites·17 claims
- 2848US2007069328A1Split gate flash devicesTAIWAN SEMICONDUCTOR MFG·Filed 2006·Application pending·0 cites
- 2946US5326794ABarbituric acid-modified bismaleimide with diamine and polyisocyanate-modified epoxy resinIND TECH RES INST·Filed 1992·Granted Jul 5, 1994·14 cites·2 claims
- 3044US8710560B2Embedded bonding pad for image sensorsHSIEH YUAN-CHIH·Filed 2007·Granted Apr 29, 2014·0 cites·20 claims
- 3144US2008044984A1Methods of avoiding wafer breakage during manufacture of backside illuminated image sensorsTAIWAN SEMICONDUCTOR MFG·Filed 2006·Application pending·0 cites
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